A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

Zhang Junyu; Wang Yong; Liu Jing; Zhang Manhong; Xu Zhongguang; Huo Zongliang; Liu Ming

doi:10.1088/1674-4926/33/8/084006

J. Semicond. > 2012, Volume 33 > Issue 8 > 084006

SEMICONDUCTOR DEVICES

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

Zhang Junyu, Wang Yong, Liu Jing, Zhang Manhong, Xu Zhongguang, Huo Zongliang and Liu Ming

+ Author Affiliations

DOI: 10.1088/1674-4926/33/8/084006

Abstract: We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the "erased states" can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 μs program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications.

Key words: P-channel, select transistor, nano-crystal memory, embedded

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Zhang Junyu, Wang Yong, Liu Jing, Zhang Manhong, Xu Zhongguang, Huo Zongliang, Liu Ming. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications[J]. Journal of Semiconductors, 2012, 33(8): 084006. doi: 10.1088/1674-4926/33/8/084006

Zhang J Y, Wang Y, Liu J, Zhang M H, Xu Z G, Huo Z L, Liu M. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications[J]. J. Semicond., 2012, 33(8): 084006. doi: 10.1088/1674-4926/33/8/084006.

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Received: 20 August 2015 Revised: 05 March 2012 Online: Published: 01 August 2012

We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the "erased states" can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 μs program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications.

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

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