| Citation: |
Said Benramache, Boubaker Benhaoua, Foued Chabane. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films[J]. Journal of Semiconductors, 2012, 33(9): 093001. doi: 10.1088/1674-4926/33/9/093001
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S Benramache, B Benhaoua, F Chabane. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films[J]. J. Semicond., 2012, 33(9): 093001. doi: 10.1088/1674-4926/33/9/093001.
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Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films
DOI: 10.1088/1674-4926/33/9/093001
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Abstract
Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 (Ω·cm)-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature. -
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