Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films

Said Benramache; Boubaker Benhaoua; Foued Chabane

doi:10.1088/1674-4926/33/9/093001

J. Semicond. > 2012, Volume 33 > Issue 9 > 093001

SEMICONDUCTOR MATERIALS

Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films

Said Benramache, Boubaker Benhaoua and Foued Chabane

+ Author Affiliations

DOI: 10.1088/1674-4926/33/9/093001

Abstract: Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 (Ω·cm)^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.

Key words: ZnO:Co films, transparent conducting films, ultrasonic spray deposition, substrate temperature, band gap energy

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Received: 03 December 2014 Revised: 09 May 2012 Online: Published: 01 September 2012

Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 (Ω·cm)^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.

Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films

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