Influence of thermal treatment temperatures on CdTe nanocrystal films and photoelectric properties of ITO/CdTe/Al

Xu Wenqing; Qu Shengchun; Wang Kefan; Bi Yu; Liu Kong; Wang Zhanguo

doi:10.1088/1674-4926/33/9/094002

J. Semicond. > 2012, Volume 33 > Issue 9 > 094002

SEMICONDUCTOR DEVICES

Influence of thermal treatment temperatures on CdTe nanocrystal films and photoelectric properties of ITO/CdTe/Al

Xu Wenqing, Qu Shengchun, Wang Kefan, Bi Yu, Liu Kong and Wang Zhanguo

+ Author Affiliations

DOI: 10.1088/1674-4926/33/9/094002

Abstract: The influence of sintering temperatures on solution-processed cadmium telluride (CdTe) nanocrystal films is studied in order to maximize the performance of CdTe/Al Schottky nanocrystal solar cells. The best overall performance of 2.67% efficiency at air mass 1.5 was achieved from devices with CdTe films sintered at 350 ℃ X-ray diffraction, scanning electron microscopy and UV-vis absorption measurements show that the CdTe nanocrystal grains began to grow remarkably well when sintering temperatures increased to 350 ℃. By analyzing the current-voltage characteristics, we find that the short-circuit current densities of devices increase with sintering temperatures ranging from 200 to 400 ℃, but, the over-sintered (450 ℃) treatment induces the shunting of devices.

Key words: solar cells

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Received: 20 August 2015 Revised: 16 April 2012 Online: Published: 01 September 2012

The influence of sintering temperatures on solution-processed cadmium telluride (CdTe) nanocrystal films is studied in order to maximize the performance of CdTe/Al Schottky nanocrystal solar cells. The best overall performance of 2.67% efficiency at air mass 1.5 was achieved from devices with CdTe films sintered at 350 ℃ X-ray diffraction, scanning electron microscopy and UV-vis absorption measurements show that the CdTe nanocrystal grains began to grow remarkably well when sintering temperatures increased to 350 ℃. By analyzing the current-voltage characteristics, we find that the short-circuit current densities of devices increase with sintering temperatures ranging from 200 to 400 ℃, but, the over-sintered (450 ℃) treatment induces the shunting of devices.

Influence of thermal treatment temperatures on CdTe nanocrystal films and photoelectric properties of ITO/CdTe/Al

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