J. Semicond. > 2013, Volume 34 > Issue 1 > 015006
|

SEMICONDUCTOR INTEGRATED CIRCUITS

Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter

Xue Wu1, 2, 3, Wu Lu1, 2, , Yiyuan Wang1, 2, 3, Jialing Xu1, 4, Leqing Zhang1, 2, 3, Jian Lu1, 2, 3, Xin Yu1, 2, 3, Xingyao Zhang1, 2, 3 and Tianle Hu1, 4

+ Author Affiliations

 Corresponding author: Lu Wu, luwu@ms.xjb.ac.cn

DOI: 10.1088/1674-4926/34/1/015006

PDF

Abstract: The total dose effect of an AD678 with a BiMOS process is studied. We investigate the performance degradation of the device in different bias states and at several dose rates. The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias. The sensitive parameters to the bias states also differ distinctly. We find that the degradation is more serious on static bias. The underlying mechanisms are discussed in detail.

Key words: BiMOS, A/D converter, 60Co γ radiation, bias state, dose rate



[1]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in 12-bit successive-approximation analog-to-digital converters. IEEE Radiation Effects Data Workshop, Snowbird, Utah, 1993:112
[2]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects on high resolution (12/14-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1994, 41(6):2459 doi: 10.1109/23.340602
[3]
Lee C I, Rax B G, Johnston A H. Hardness assurance and testing techniques for high resolution (12 to 16 bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1995, 42(6):1681 doi: 10.1109/23.488766
[4]
Youk G U. Dose rate effects of a bipolar AD converter. IEEE Radiation Effects Data Workshop, Indian Wells, 1996:38 http://ieeexplore.ieee.org/document/574186/keywords
[5]
Guo Q, Ren D, Fan L, et al. Ionizing radiation effect of analog to digital converters. Nucl Tech, 1997, 20(1):753
[6]
Xing K, Wang Y, Pan H. Radiation effect test on ADC/DAC and high density memory devices with 60Co γ-rays. J Radiati Res Radiat Processing, 2006, 24(4):253 https://www.researchgate.net/institution/Brookhaven_National_Laboratory/department/Instrumentation_Division/publications
[7]
Zheng Yuzhan, Lu Wu, Ren Diyuan, et al. Characteristics of high-and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinic, 2009, 58(8):5572 doi: 10.1088/1674-4926/34/1/015006/meta
[8]
Shaneyfelt M R, Dodd P E, Draper B L, et al. Challenges in hardening technologies using shallow-trench isolation. IEEE Trans Nucl Sci, 1998, 45(6):2584 doi: 10.1109/23.736501
[9]
Enlow E W, Pease R L, Combs W, et al. Response of advanced bipolar processes to ionizing radiation. IEEE Trans Nucl Sci, 1991, 49(6):1342 http://ieeexplore.ieee.org/document/124115/?arnumber=124115
[10]
Lee C I, Johnston A H. Comparison of total dose responses on high resolution analog-to-digital converter technologies. IEEE Trans Nucl Sci, 1998, 45(3):1444 doi: 10.1109/23.685221
[11]
Chavez R M, Rax B G, Scheick L Z, et al. Total ionizing dose effects in bipolar and BiCMOS devices. IEEE Radiation Effects Data Workshop, Seattle WA, 2005:144 http://ieeexplore.ieee.org/document/6522833/keywords
[12]
Fleetwood D M, Kosier S L, Nowlin R N, et al. Physical mechanisms contribution enhanced bipolar gain degradation at low dose rate. IEEE Trans Nucl Sci, 1994, 41(6):1871 doi: 10.1109/23.340519
[13]
Rashkeev S N, Cirba C R, Fleetwood D M, et al. Physical model for enhanced interface-trap formation at low dose rate. IEEE Trans Nucl Sci, 2002, 38(6):2650 http://ieeexplore.ieee.org/document/1134199/authors
[14]
Hjalmarson H P, Pease R L, Witczak S C, et al. Mechanisms for radiation dose-rate sensitivity of bipolar transistors. IEEE Trans Nucl Sci, 2003, 50(6):1901 doi: 10.1109/TNS.2003.821803
Fig. 1.  AD678 functional block diagram.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Static bias state.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Power consumption of the AD678.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  The input-output curve of AD678 with LDR.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  The input-output curve of AD678 with LDR.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Relationship between the DNL of the A/D converter and total dose with static bias at 0.02 rad(Si)/s.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  Relationship between the DNL of the A/D converter and total dose with zero bias at 0.02 rad(Si)/s.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  Relationship between the misscode of the A/D converter and total dose.

DownLoad: Full-Size Img PowerPoint
Fig. 9.  The normalized operating current. (a) $+12$ V operating current. (b) $+5$ V operating current. (c) $-12$ V operating current versus total dose.

DownLoad: Full-Size Img PowerPoint
Fig. 10.  The structure of a flash A/D converter.

DownLoad: Full-Size Img PowerPoint
[1]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in 12-bit successive-approximation analog-to-digital converters. IEEE Radiation Effects Data Workshop, Snowbird, Utah, 1993:112
[2]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects on high resolution (12/14-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1994, 41(6):2459 doi: 10.1109/23.340602
[3]
Lee C I, Rax B G, Johnston A H. Hardness assurance and testing techniques for high resolution (12 to 16 bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1995, 42(6):1681 doi: 10.1109/23.488766
[4]
Youk G U. Dose rate effects of a bipolar AD converter. IEEE Radiation Effects Data Workshop, Indian Wells, 1996:38 http://ieeexplore.ieee.org/document/574186/keywords
[5]
Guo Q, Ren D, Fan L, et al. Ionizing radiation effect of analog to digital converters. Nucl Tech, 1997, 20(1):753
[6]
Xing K, Wang Y, Pan H. Radiation effect test on ADC/DAC and high density memory devices with 60Co γ-rays. J Radiati Res Radiat Processing, 2006, 24(4):253 https://www.researchgate.net/institution/Brookhaven_National_Laboratory/department/Instrumentation_Division/publications
[7]
Zheng Yuzhan, Lu Wu, Ren Diyuan, et al. Characteristics of high-and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinic, 2009, 58(8):5572 doi: 10.1088/1674-4926/34/1/015006/meta
[8]
Shaneyfelt M R, Dodd P E, Draper B L, et al. Challenges in hardening technologies using shallow-trench isolation. IEEE Trans Nucl Sci, 1998, 45(6):2584 doi: 10.1109/23.736501
[9]
Enlow E W, Pease R L, Combs W, et al. Response of advanced bipolar processes to ionizing radiation. IEEE Trans Nucl Sci, 1991, 49(6):1342 http://ieeexplore.ieee.org/document/124115/?arnumber=124115
[10]
Lee C I, Johnston A H. Comparison of total dose responses on high resolution analog-to-digital converter technologies. IEEE Trans Nucl Sci, 1998, 45(3):1444 doi: 10.1109/23.685221
[11]
Chavez R M, Rax B G, Scheick L Z, et al. Total ionizing dose effects in bipolar and BiCMOS devices. IEEE Radiation Effects Data Workshop, Seattle WA, 2005:144 http://ieeexplore.ieee.org/document/6522833/keywords
[12]
Fleetwood D M, Kosier S L, Nowlin R N, et al. Physical mechanisms contribution enhanced bipolar gain degradation at low dose rate. IEEE Trans Nucl Sci, 1994, 41(6):1871 doi: 10.1109/23.340519
[13]
Rashkeev S N, Cirba C R, Fleetwood D M, et al. Physical model for enhanced interface-trap formation at low dose rate. IEEE Trans Nucl Sci, 2002, 38(6):2650 http://ieeexplore.ieee.org/document/1134199/authors
[14]
Hjalmarson H P, Pease R L, Witczak S C, et al. Mechanisms for radiation dose-rate sensitivity of bipolar transistors. IEEE Trans Nucl Sci, 2003, 50(6):1901 doi: 10.1109/TNS.2003.821803

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2240 Times PDF downloads: 7 Times Cited by: 0 Times

    History

    Received: 10 May 2012 Revised: 05 June 2012 Online: Published: 01 January 2013

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2013  >  34(1): 015006
      Xue Wu, Wu Lu, Yiyuan Wang, Jialing Xu, Leqing Zhang, Jian Lu, Xin Yu, Xingyao Zhang, Tianle Hu. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. Journal of Semiconductors, 2013, 34(1): 015006. doi: 10.1088/1674-4926/34/1/015006 ****X Wu, W Lu, Y Y Wang, J L Xu, L Q Zhang, J Lu, X Yu, X Y Zhang, T L Hu. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. J. Semicond., 2013, 34(1): 015006. doi: 10.1088/1674-4926/34/1/015006.
      Citation:
      Xue Wu, Wu Lu, Yiyuan Wang, Jialing Xu, Leqing Zhang, Jian Lu, Xin Yu, Xingyao Zhang, Tianle Hu. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. Journal of Semiconductors, 2013, 34(1): 015006. doi: 10.1088/1674-4926/34/1/015006 ****
      X Wu, W Lu, Y Y Wang, J L Xu, L Q Zhang, J Lu, X Yu, X Y Zhang, T L Hu. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. J. Semicond., 2013, 34(1): 015006. doi: 10.1088/1674-4926/34/1/015006.
      shu

      Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter

      DOI: 10.1088/1674-4926/34/1/015006
      • 1.

        Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

      • 2.

        Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China

      • 3.

        Xinjiang University, Urumqi 830046, China

      • 4.

        Xinjiang University, Urumqi 830046, China

      More Information
      • Corresponding author: Lu Wu, luwu@ms.xjb.ac.cn
      • Received Date: 2012-05-10
      • Revised Date: 2012-06-05
      • Published Date: 2013-01-01

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return