J. Semicond. > 2013, Volume 34 > Issue 11 > 114009
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SEMICONDUCTOR DEVICES

Rapid evaluation method for the normal lifetime of an infrared light-emitting diode

Xiaofeng Guo, Manqing Tan, Xin Wei, Jian Jiao, Wentao Guo and Ningning Sun

+ Author Affiliations

 Corresponding author: Guo Xiaofeng, Email:gxf_semi@semi.ac.cn

DOI: 10.1088/1674-4926/34/11/114009

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Abstract: Based on the Arrhenius model, a rapid evaluation method for an infrared diode's normal lifetime is proposed, and the theoretical model is constructed. Accelerated life testing of an infrared light-emitting diode (IRLED), which takes less time than usual, is carried out under temperature and electric current stress. Using this method, the activation energy and the IRLED's normal lifetime are calculated and analyzed.

Key words: Arrhenius model, acceleration lifetime test, IRLED, activation energy



[1]
Jin Ling. Study of acceleration lifetime test for GaAs infrared LED. Semiconductor Optoelectronics, 1995, 16(1):77(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTG199501015.htm
[2]
Zhang Jianping. Statistic analysis on acceleration lifetime test data for infrared LED based on LSM. Semiconductor Optoelectronics, 2005, 26(2):92(in Chinese)
[3]
Zhang Jianping, Wu Wenli, Zhou Tingjun, et al. Life prediction for infrared LED based on MLE under lognormal distribution. Chinese Journal of Liquid Crystals and Displays, 2011, 26(1):68(in Chinese) doi: 10.3788/YJYXS
[4]
Yamakoshi S. Hasegawa O, Hamaguchi H, et al. Degradation of high-radiance AlGaAs LED. Appl Phys Lett, 1977, 31(9):626
[5]
Zhang Louying, Zhou Li, Zhang Jiayu, et al. Research on mechanism of high-power LED luminous attenuation.Semiconductor Technology, 2009, 34(5):474(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTJ200905026.htm
[6]
Yan Deli, Gao Jinhuan, Gao Zhaofeng, et al. Evaluation of high-bright LED's MTTF. Semiconductor Technology, 2009, 34(10):978(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTotal-BDTJ200910015.htm
[7]
He Weili, Guo Weiling, Gao Wei, et al. Test method of lifetime and reliability evaluation for high-power LED. Journal of Applied Optics, 2008, 29(4):533, 561 http://en.cnki.com.cn/Article_en/CJFDTOTAL-YYGX200804011.htm
[8]
Liu Xijuan, Wen Yan, Zhu Shaolong. Definition and test method of lifetime for white LED. Lamps and Lighting, 2001, (4):16 http://d.wanfangdata.com.cn/Periodical/NSTL_QKJJ0214604487
[9]
Lin Zhen, Jiang Tongmin, Cheng Yongsheng, et al. Study on Arrhenius relationship. Electronic Product Reliability And Environmental Testing, 2005, 23(6):124 http://en.cnki.com.cn/Article_en/CJFDTOTAL-DZKH200506004.htm
Fig. 1.  I-V and P-I curves of sample A2

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Fig. 2.  Linear fitting for experiments S1 and S2, respectively. (a) $I_{\rm a}$ = 150 mA, aging for 48 h at each temperature point. (b) $I_{\rm a}$ = 50 mA, aging for 120 h at each temperature point

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Table 1.   Device number and junction temperature

Table 2.   Calculation of $E_{\rm a}$ and $\beta _0$ for each experiment

Table 3.   Calculation of $\beta_{\rm 0-b}$. Condition: $E_{\rm a}$ = 0.514 eV, $\beta _{\rm 0-a}$ = 1392, $t_{\rm a}$ = 48 h, $t_{\rm b}$ = 120 h

Table 4.   Calculation of t. Condition: p = 50%, $E_{\rm a}$ = 0.514 eV, T = 297 K
[1]
Jin Ling. Study of acceleration lifetime test for GaAs infrared LED. Semiconductor Optoelectronics, 1995, 16(1):77(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTG199501015.htm
[2]
Zhang Jianping. Statistic analysis on acceleration lifetime test data for infrared LED based on LSM. Semiconductor Optoelectronics, 2005, 26(2):92(in Chinese)
[3]
Zhang Jianping, Wu Wenli, Zhou Tingjun, et al. Life prediction for infrared LED based on MLE under lognormal distribution. Chinese Journal of Liquid Crystals and Displays, 2011, 26(1):68(in Chinese) doi: 10.3788/YJYXS
[4]
Yamakoshi S. Hasegawa O, Hamaguchi H, et al. Degradation of high-radiance AlGaAs LED. Appl Phys Lett, 1977, 31(9):626
[5]
Zhang Louying, Zhou Li, Zhang Jiayu, et al. Research on mechanism of high-power LED luminous attenuation.Semiconductor Technology, 2009, 34(5):474(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTJ200905026.htm
[6]
Yan Deli, Gao Jinhuan, Gao Zhaofeng, et al. Evaluation of high-bright LED's MTTF. Semiconductor Technology, 2009, 34(10):978(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTotal-BDTJ200910015.htm
[7]
He Weili, Guo Weiling, Gao Wei, et al. Test method of lifetime and reliability evaluation for high-power LED. Journal of Applied Optics, 2008, 29(4):533, 561 http://en.cnki.com.cn/Article_en/CJFDTOTAL-YYGX200804011.htm
[8]
Liu Xijuan, Wen Yan, Zhu Shaolong. Definition and test method of lifetime for white LED. Lamps and Lighting, 2001, (4):16 http://d.wanfangdata.com.cn/Periodical/NSTL_QKJJ0214604487
[9]
Lin Zhen, Jiang Tongmin, Cheng Yongsheng, et al. Study on Arrhenius relationship. Electronic Product Reliability And Environmental Testing, 2005, 23(6):124 http://en.cnki.com.cn/Article_en/CJFDTOTAL-DZKH200506004.htm

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    Received: 15 April 2013 Revised: 17 May 2013 Online: Published: 01 November 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(11): 114009
      Xiaofeng Guo, Manqing Tan, Xin Wei, Jian Jiao, Wentao Guo, Ningning Sun. Rapid evaluation method for the normal lifetime of an infrared light-emitting diode[J]. Journal of Semiconductors, 2013, 34(11): 114009. doi: 10.1088/1674-4926/34/11/114009 ****X F Guo, M Q Tan, X Wei, J Jiao, W T Guo, N N Sun. Rapid evaluation method for the normal lifetime of an infrared light-emitting diode[J]. J. Semicond., 2013, 34(11): 114009. doi: 10.1088/1674-4926/34/11/114009.
      Citation:
      Xiaofeng Guo, Manqing Tan, Xin Wei, Jian Jiao, Wentao Guo, Ningning Sun. Rapid evaluation method for the normal lifetime of an infrared light-emitting diode[J]. Journal of Semiconductors, 2013, 34(11): 114009. doi: 10.1088/1674-4926/34/11/114009 ****
      X F Guo, M Q Tan, X Wei, J Jiao, W T Guo, N N Sun. Rapid evaluation method for the normal lifetime of an infrared light-emitting diode[J]. J. Semicond., 2013, 34(11): 114009. doi: 10.1088/1674-4926/34/11/114009.
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      Rapid evaluation method for the normal lifetime of an infrared light-emitting diode

      DOI: 10.1088/1674-4926/34/11/114009

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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      • Corresponding author: Guo Xiaofeng, Email:gxf_semi@semi.ac.cn
      • Received Date: 2013-04-15
      • Revised Date: 2013-05-17
      • Published Date: 2013-11-01

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