Fig. 1.
The variation of $r$ with $w$ and $s$ .
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Yan Zhang, Gang Dong, Yintang Yang, Ning Wang, Yaoshun Ding, Xiaoxian Liu, Fengjuan Wang. A novel interconnect optimal buffer insertion model considering the self-heating effect[J]. Journal of Semiconductors, 2013, 34(11): 115004. doi: 10.1088/1674-4926/34/11/115004
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Y Zhang, G Dong, Y T Yang, N Wang, Y S Ding, X X Liu, F J Wang. A novel interconnect optimal buffer insertion model considering the self-heating effect[J]. J. Semicond., 2013, 34(11): 115004. doi: 10.1088/1674-4926/34/11/115004.
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A novel interconnect optimal buffer insertion model considering the self-heating effect
DOI: 10.1088/1674-4926/34/11/115004
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Abstract
Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance model and according to the trade-off theory, a novel optimization analytical model of delay, power dissipation and bandwidth is derived. The proposed optimal model is verified and compared based on 90 nm, 65 nm and 40 nm CMOS technologies. It can be found that more optimum results can be easily obtained by the proposed model. This optimization model is more accurate and realistic than the conventional optimization models, and can be integrated into the global interconnection design of nano-scale integrated circuits. -
References
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