Fig. 1.
Schematic diagram of samples A, B and C.
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| Citation: |
Shaoxin Zhu, Jianchang Yan, Jianping Zeng, Ning Zhang, Zhao Si, Peng Dong, Jinmin Li, Junxi Wang. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD[J]. Journal of Semiconductors, 2013, 34(5): 053004. doi: 10.1088/1674-4926/34/5/053004
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S X Zhu, J C Yan, J P Zeng, N Zhang, Z Si, P Dong, J M Li, J X Wang. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD[J]. J. Semicond., 2013, 34(5): 053004. doi: 10.1088/1674-4926/34/5/053004.
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The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD
DOI: 10.1088/1674-4926/34/5/053004
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Abstract
The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x=0.55) epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect tests, δ-doped and modulation-doped n-AlxGa1-xN have better crystal quality, surface morphology and electrical properties as compared with uniformly-doped n-AlxGa1-xN. These improvements are attributed to the SiNx growth mask induced by δ-doping layers and the dislocation-blocking effect induced by both growth techniques. In addition, due to the broadened doping profile ascribed to enhanced dopant diffusion at high growth temperatures (1150℃) of n-Al0.55Ga0.45N, modulation-doped n-Al0.55Ga0.45N has similar properties as δ-doped n-Al0.55Ga0.45N.-
Keywords:
- n-AlxGa1-xN,
- MOCVD,
- δ-doping,
- modulation-doping,
- dopants diffusion
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References
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