Fig. 1.
Schematic cross-sectional drawing of GaN-based MQW EPI layers grown on Si substrate.
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| Citation: |
Shaohua Zhang, Bo Feng, Qian Sun, Hanmin Zhao. Preparation of GaN-on-Si based thin-film flip-chip LEDs[J]. Journal of Semiconductors, 2013, 34(5): 053006. doi: 10.1088/1674-4926/34/5/053006
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S H Zhang, B Feng, Q Sun, H M Zhao. Preparation of GaN-on-Si based thin-film flip-chip LEDs[J]. J. Semicond., 2013, 34(5): 053006. doi: 10.1088/1674-4926/34/5/053006.
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Preparation of GaN-on-Si based thin-film flip-chip LEDs
DOI: 10.1088/1674-4926/34/5/053006
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Abstract
GaN based MQW epitaxial layers were grown on Si (111) substrate by MOCVD using AlN as the buffer layer. High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and flip-chip design. The blue and white 1.1×1.1 mm2 LED lamps are measured. The optical powers and external quantum efficiency for silicone encapsulated blue lamp are 546 mW, and 50.3% at forward current of 350 mA, while the photometric light output for a white lamp packaged with standard YAG phosphor is 120.1 lm.-
Keywords:
- silicon substrate,
- GaN,
- flip chip,
- LED
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References
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