Citation: |
R. Suresh, V. Ponnuswamy, J. Chandrasekaran, D. Manoharan, R. Mariappan. The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films[J]. Journal of Semiconductors, 2013, 34(8): 083001. doi: 10.1088/1674-4926/34/8/083001
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R. Suresh, V. Ponnuswamy, J. Chandrasekaran, D. Manoharan, R. Mariappan. The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films[J]. J. Semicond., 2013, 34(8): 083001. doi: 10.1088/1674-4926/34/8/083001.
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The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films
DOI: 10.1088/1674-4926/34/8/083001
More Information
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Abstract
Polyaniline, ZnO and polyaniline/ZnO nanocomposite thin films are coated on glass substrates using the spray pyrolysis technique. The samples are characterized by the XRD, SEM, EDAX, UV-Vis and I-V characteristics. The XRD analyses confirm that the spray-coated polyaniline and ZnO thin films have orthorhombic and hexagonal structures, respectively, and optical bandgap energy decreases from 3.81 to 3.41 eV with the addition of a Zn atom. SEM analysis of the polyaniline/ZnO nanocomposite thin films shows that there is an agglomeration of ZnO particles with uniform distribution in the polyaniline matrix, and the diode characteristics of the polyaniline/ZnO nanocomposite show weak rectification behavior. Parameters such as the ideality factor, reverse saturation current and barrier height are calculated from the I-V characteristics.-
Keywords:
- thin films,
- X-ray diffraction,
- optical properties,
- I-V characteristics
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References
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