J. Semicond. > 2013, Volume 34 > Issue 9 > 095011
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SEMICONDUCTOR INTEGRATED CIRCUITS

A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications

Jihong Zhang, Xuefei Bai and Lu Huang

+ Author Affiliations

 Corresponding author: Bai Xuefei, Email:baixf@ustc.edu.cn

DOI: 10.1088/1674-4926/34/9/095011

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Abstract: A wideband inductorless low noise amplifier for digital TV tuner applications is presented. The proposed LNA scheme uses a composite NMOS/PMOS cross-coupled transistor pair to provide partial cancellation of noise generated by the input transistors. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed LNA achieves 12.2-15.2 dB voltage gain from 300 to 900 MHz, the noise figure is below 3.1 dB and has a minimum value of 2.3 dB, and the best input-referred 1-dB compression point (IP1dB) is -17 dBm at 900 MHz. The core consumes 7 mA current with a supply voltage of 1.8 V and occupies an area of 0.5×0.35 mm2.

Key words: LNA, noise cancellation, CMOS, wideband



[1]
Yuan H Q, Lin F J, Fu Z Q, et al. A 0.18μm CMOS inductorless complementary-noise-canceling-LNA for TV tuner applications. Journal of Semiconductors, 2010, 31(12):125006 doi: 10.1088/1674-4926/31/12/125006
[2]
Bruccoleri F, Klumperink E A M, Nauta B. Wide-band CMOS low-noise amplifier exploiting thermal noise canceling. IEEE J Solid-State Circuits, 2004, 39(2):275 doi: 10.1109/JSSC.2003.821786
[3]
Chen W H, Liu G, Zdravko B, et al. A highly linear broadband CMOS LNA employing noise and distortion cancellation. IEEE RFIC Symp, 2007:61 http://ieeexplore.ieee.org/document/4494645/
[4]
Blaakmeer S C, Klumperink E A M, Nauta B, et al. An inductorless wideband balun-LNA in 65 nm CMOS with balanced output. IEEE ESSCIRC, 2007:364 http://ieeexplore.ieee.org/document/4430319/
[5]
Woo S, Kim W, Lee C H, et al. A 3.6 mW differential common-gate CMOS LNA with positive-negative feedback. IEEE ISSCC, 2009:218 http://ieeexplore.ieee.org/document/4977386/?arnumber=4977386&searchWithin%3D60G%20power%20amplifier%26sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number:4977283)
[6]
Hampel S K, Schmitz O, Tiebout M, et al. Inductorless 1-10.5 GHz wideband LNA for multistandard applications. IEEE ASSCC, 2009:269
[7]
Kim J, Silva-Martinez J. Wideband inductorless balun-LNA employing feedback for low-power low-voltage applications. IEEE Trans Microw Theory Tech, 2012, 60(9):2833 doi: 10.1109/TMTT.2012.2206825
[8]
El-Nozahi M, Helmy A A, Sánchez-Sinencio E, et al. An inductor-less noise-cancelling broadband low noise amplifier with composite transistor pair in 90 nm CMOS Technology. IEEE J Solid-State Circuits, 2011, 46(5):1111 doi: 10.1109/JSSC.2011.2118310
[9]
Razavi B. RF microelectronics. 2nd ed. Prentice Hall, 2011, Chapter 5
[10]
Feng L S, Huang L, Bai X F, et al. A 0.18μm CMOS 3-5 GHz broadband flat gain low noise amplifier. Journal of Semiconductors, 2010, 31(2):025003 doi: 10.1088/1674-4926/31/2/025003
Fig. 1.  (a) Noise and (b) signal voltage at nodes X and Y

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Fig. 2.  Noise cancellation of feedback CS stage

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Fig. 3.  Complete schematic of the proposed wideband inductorless LNA

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Fig. 4.  Composite NMOS/PMOS transistor architecture

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Fig. 5.  Half-circuit small-signal model of the proposed LNA

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Fig. 6.  Equivalent circuits showing the effect of noise current

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Fig. 7.  Noise sources in the proposed LNA

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Fig. 8.  Chip microphotograph

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Fig. 9.  Measured S parameters

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Fig. 10.  Measured NF

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Fig. 11.  Measured input 1 dB compression point

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Table 1.   Performance summary and comparison
[1]
Yuan H Q, Lin F J, Fu Z Q, et al. A 0.18μm CMOS inductorless complementary-noise-canceling-LNA for TV tuner applications. Journal of Semiconductors, 2010, 31(12):125006 doi: 10.1088/1674-4926/31/12/125006
[2]
Bruccoleri F, Klumperink E A M, Nauta B. Wide-band CMOS low-noise amplifier exploiting thermal noise canceling. IEEE J Solid-State Circuits, 2004, 39(2):275 doi: 10.1109/JSSC.2003.821786
[3]
Chen W H, Liu G, Zdravko B, et al. A highly linear broadband CMOS LNA employing noise and distortion cancellation. IEEE RFIC Symp, 2007:61 http://ieeexplore.ieee.org/document/4494645/
[4]
Blaakmeer S C, Klumperink E A M, Nauta B, et al. An inductorless wideband balun-LNA in 65 nm CMOS with balanced output. IEEE ESSCIRC, 2007:364 http://ieeexplore.ieee.org/document/4430319/
[5]
Woo S, Kim W, Lee C H, et al. A 3.6 mW differential common-gate CMOS LNA with positive-negative feedback. IEEE ISSCC, 2009:218 http://ieeexplore.ieee.org/document/4977386/?arnumber=4977386&searchWithin%3D60G%20power%20amplifier%26sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number:4977283)
[6]
Hampel S K, Schmitz O, Tiebout M, et al. Inductorless 1-10.5 GHz wideband LNA for multistandard applications. IEEE ASSCC, 2009:269
[7]
Kim J, Silva-Martinez J. Wideband inductorless balun-LNA employing feedback for low-power low-voltage applications. IEEE Trans Microw Theory Tech, 2012, 60(9):2833 doi: 10.1109/TMTT.2012.2206825
[8]
El-Nozahi M, Helmy A A, Sánchez-Sinencio E, et al. An inductor-less noise-cancelling broadband low noise amplifier with composite transistor pair in 90 nm CMOS Technology. IEEE J Solid-State Circuits, 2011, 46(5):1111 doi: 10.1109/JSSC.2011.2118310
[9]
Razavi B. RF microelectronics. 2nd ed. Prentice Hall, 2011, Chapter 5
[10]
Feng L S, Huang L, Bai X F, et al. A 0.18μm CMOS 3-5 GHz broadband flat gain low noise amplifier. Journal of Semiconductors, 2010, 31(2):025003 doi: 10.1088/1674-4926/31/2/025003

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    Received: 04 February 2013 Revised: 25 March 2013 Online: Published: 01 September 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(9): 095011
      Jihong Zhang, Xuefei Bai, Lu Huang. A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications[J]. Journal of Semiconductors, 2013, 34(9): 095011. doi: 10.1088/1674-4926/34/9/095011 ****J H Zhang, X F Bai, L Huang. A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications[J]. J. Semicond., 2013, 34(9): 095011. doi: 10.1088/1674-4926/34/9/095011.
      Citation:
      Jihong Zhang, Xuefei Bai, Lu Huang. A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications[J]. Journal of Semiconductors, 2013, 34(9): 095011. doi: 10.1088/1674-4926/34/9/095011 ****
      J H Zhang, X F Bai, L Huang. A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications[J]. J. Semicond., 2013, 34(9): 095011. doi: 10.1088/1674-4926/34/9/095011.
      shu

      A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications

      DOI: 10.1088/1674-4926/34/9/095011

      • Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China

      Funds:

      the National Science and Technology Major Project, China 2011ZX03004-002-01

      Project supported by the National Science and Technology Major Project, China (No. 2011ZX03004-002-01)

      More Information
      • Corresponding author: Bai Xuefei, Email:baixf@ustc.edu.cn
      • Received Date: 2013-02-04
      • Revised Date: 2013-03-25
      • Published Date: 2013-09-01

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