A millimeter wave linear superposition oscillator in 0.18 <i>μ</i>m CMOS technology

Dong Yan; Luhong Mao; Qiujie Su; Sheng Xie; Shilin Zhang

doi:10.1088/1674-4926/35/1/015006

J. Semicond. > 2014, Volume 35 > Issue 1 > 015006

SEMICONDUCTOR INTEGRATED CIRCUITS

A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

Dong Yan, Luhong Mao, Qiujie Su, Sheng Xie and Shilin Zhang

+ Author Affiliations

Corresponding author: Mao Luhong, Email:13622122693@139.com

DOI: 10.1088/1674-4926/35/1/015006

Abstract: This paper presents a millimeter wave (mm-wave) oscillator that generates signal at 36.56 GHz. The mm-wave oscillator is realized in a UMC 0.18 μm CMOS process. The linear superposition (LS) technique breaks through the limit of cut-off frequency (f_T), and realizes a much higher oscillation than f_T. Measurement results show that the LS oscillator produces a calibrated -37.17 dBm output power when biased at 1.8 V; the output power of fundamental signal is -10.85 dBm after calibration. The measured phase noise at 1 MHz frequency offset is -112.54 dBc/Hz at the frequency of 9.14 GHz. This circuit can be properly applied to mm-wave communication systems with advantages of low cost and high integration density.

Key words: mm-wave signal generation, linear superposition, oscillator, CMOS process

References

[1]	Lee J, Li Y A, Hung M H, et al. A fully-integrated 77-GHz FMCW radar transceiver in 65-nm CMOS technology. IEEE J Solid-State Circuits, 2010, 45(12):2746 doi: 10.1109/JSSC.2010.2075250
[2]	Tiebout M, Wohlmuth H D, Knapp H, et al. Low power wideband receiver and transmitter chipset for mm-wave imaging in SiGe bipolar technology. IEEE J Solid-State Circuits, 2012, 47(5):1175 doi: 10.1109/JSSC.2012.2185570
[3]	Lu X, Lee C M, Wu S Y, et al. GaN-based S₀-wave sensors on silicon for chemical and biological sensing in liquid environments. IEEE Sensors J, 2013, 13(4):1245 doi: 10.1109/JSEN.2012.2231958
[4]	Pi Z, Khan F, et al. An introduction to millimeter-wave mobile broadband systems. IEEE Commun Mag, 2011, 49(6):101 doi: 10.1109/MCOM.2011.5783993
[5]	Huang Yinkun, Wu Danyu, Zhou Lei, et al. A 23 GHz low power VCO in SiGe BiCMOS technology. Journal of Semiconductors, 2013, 34(4):045003 doi: 10.1088/1674-4926/34/4/045003
[6]	Cheng Wei, Wang Yuan, Zhao Yan, et al. A THz InGaAs/InP double heterojunction bipolar transistor with f_max=325 GHz and BV_CBO=10.6 V. Journal of Semiconductors, 2013, 34(5):054006 doi: 10.1088/1674-4926/34/5/054006
[7]	Liu J, Chien H C, Fan S H, et al. Efficient optical millimeter-wave generation using a frequency-tripling Fabry-Perot laser with sideband injection and synchronization. IEEE Photonics Technol Lett, 2011, 23(18):1325 doi: 10.1109/LPT.2011.2159834
[8]	Cao C, Seok E, K K O. 192 GHz push-push VCO in 0.13μm CMOS. Electron Lett, 2006, 42(4):208 doi: 10.1049/el:20064159
[9]	Li X, Yu J, Dong Z, et al. Photonics millimeter-wave generation in the E-band and bidirectional transmission. IEEE Photonics J, 2013, 5(1):7900107 doi: 10.1109/JPHOT.2013.2241419
[10]	Razavi B. Design of analog CMOS integrated circuits. Singapore:McGraw-Hill, 2001
[11]	Huang D, LaRocca T R, Chang M C F, et al. Terahertz CMOS frequency generator using linear superposition technique. IEEE J Solid-State Circuits, 2008, 43(12):2730 doi: 10.1109/JSSC.2008.2004868
[12]	Shang Y, Yu H, Cai D, et al. Design of high-Q millimeter-wave oscillator by differential transmission line loaded with metamaterial resonator in 65-nm CMOS. IEEE Trans Microw Theory Tech, 2013, 61(5):1892 doi: 10.1109/TMTT.2013.2253489
[13]	Kim D D, Kim J, Plouchart J O, et al. A 70 GHz manufacturable complementary LC-VCO with 6.14 GHz tuning range in 65 nm SOI CMOS. IEEE ISSCC, 2007:540 doi: 10.1007%2Fs10470-011-9747-x.pdf
[14]	Cao C, Kenneth K O. A 140-GHz fundamental mode voltage-controlled oscillator in 90-nm CMOS technology. IEEE Microw Wireless Compon Lett, 2006, 16(10):555 doi: 10.1109/LMWC.2006.882385
[15]	Yang J, Kim C Y, Kim D W, et al. Design of a 24-GHz CMOS VCO with an asymmetric-width transformer. IEEE Trans Circuits Syst, 2010, 57(3):173 doi: 10.1109/TCSII.2010.2043381
[16]	Choi T Y, Lee H, Katehi L P B, et al. A low phase noise 10 GHz VCO in 0.18μm CMOS process. The European Conference on Wireless Technology, 2005:273 https://engineering.purdue.edu/~saeedm/CC40.pdf
[17]	Ko S, Kim J G, Song T, et al. 20GHz integrated CMOS frequency sources with a quadrature VCO using transformers. IEEE Radio Frequency Integrated Circuits Symposium, 2004:269 https://engineering.purdue.edu/~saeedm/CC40.pdf
[18]	Liu R C, Chang H Y, Wang C H, et al. A 63 GHz VCO using a standard 0.25μm CMOS process. IEEE ISSCC, 2004:446
[19]	Wang Huan, Wang Zhigong, Feng Jun, et al. A 10GHz LC voltage-controlled oscillator in 0.25μm CMOS. Journal of Semiconductors, 2008, 29(3):484 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=07081101&flag=1

Fig. 1. Schematic of the fundamental oscillation unit.

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Fig. 2. Block diagram of the LS algorithm.

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Fig. 3. Schematic of the LS oscillator.

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Fig. 4. Chip micrograph of the mm-wave LS oscillator.

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Fig. 5. Spectrum of the signal at 9.14 GHz.

DownLoad: Full-Size Img PowerPoint

Fig. 6. Phase noise of 9.14 GHz signal.

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Fig. 7. Measured output waveforms.

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Fig. 8. Photograph of measurement set up.

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Fig. 9. Power spectrum of the output signal.

DownLoad: Full-Size Img PowerPoint

Table 1. Fundamental to fourth conversion ratio.

Table 2. Comparison of oscillator performance.

[1]	Lee J, Li Y A, Hung M H, et al. A fully-integrated 77-GHz FMCW radar transceiver in 65-nm CMOS technology. IEEE J Solid-State Circuits, 2010, 45(12):2746 doi: 10.1109/JSSC.2010.2075250
[2]	Tiebout M, Wohlmuth H D, Knapp H, et al. Low power wideband receiver and transmitter chipset for mm-wave imaging in SiGe bipolar technology. IEEE J Solid-State Circuits, 2012, 47(5):1175 doi: 10.1109/JSSC.2012.2185570
[3]	Lu X, Lee C M, Wu S Y, et al. GaN-based S₀-wave sensors on silicon for chemical and biological sensing in liquid environments. IEEE Sensors J, 2013, 13(4):1245 doi: 10.1109/JSEN.2012.2231958
[4]	Pi Z, Khan F, et al. An introduction to millimeter-wave mobile broadband systems. IEEE Commun Mag, 2011, 49(6):101 doi: 10.1109/MCOM.2011.5783993
[5]	Huang Yinkun, Wu Danyu, Zhou Lei, et al. A 23 GHz low power VCO in SiGe BiCMOS technology. Journal of Semiconductors, 2013, 34(4):045003 doi: 10.1088/1674-4926/34/4/045003
[6]	Cheng Wei, Wang Yuan, Zhao Yan, et al. A THz InGaAs/InP double heterojunction bipolar transistor with f_max=325 GHz and BV_CBO=10.6 V. Journal of Semiconductors, 2013, 34(5):054006 doi: 10.1088/1674-4926/34/5/054006
[7]	Liu J, Chien H C, Fan S H, et al. Efficient optical millimeter-wave generation using a frequency-tripling Fabry-Perot laser with sideband injection and synchronization. IEEE Photonics Technol Lett, 2011, 23(18):1325 doi: 10.1109/LPT.2011.2159834
[8]	Cao C, Seok E, K K O. 192 GHz push-push VCO in 0.13μm CMOS. Electron Lett, 2006, 42(4):208 doi: 10.1049/el:20064159
[9]	Li X, Yu J, Dong Z, et al. Photonics millimeter-wave generation in the E-band and bidirectional transmission. IEEE Photonics J, 2013, 5(1):7900107 doi: 10.1109/JPHOT.2013.2241419
[10]	Razavi B. Design of analog CMOS integrated circuits. Singapore:McGraw-Hill, 2001
[11]	Huang D, LaRocca T R, Chang M C F, et al. Terahertz CMOS frequency generator using linear superposition technique. IEEE J Solid-State Circuits, 2008, 43(12):2730 doi: 10.1109/JSSC.2008.2004868
[12]	Shang Y, Yu H, Cai D, et al. Design of high-Q millimeter-wave oscillator by differential transmission line loaded with metamaterial resonator in 65-nm CMOS. IEEE Trans Microw Theory Tech, 2013, 61(5):1892 doi: 10.1109/TMTT.2013.2253489
[13]	Kim D D, Kim J, Plouchart J O, et al. A 70 GHz manufacturable complementary LC-VCO with 6.14 GHz tuning range in 65 nm SOI CMOS. IEEE ISSCC, 2007:540 doi: 10.1007%2Fs10470-011-9747-x.pdf
[14]	Cao C, Kenneth K O. A 140-GHz fundamental mode voltage-controlled oscillator in 90-nm CMOS technology. IEEE Microw Wireless Compon Lett, 2006, 16(10):555 doi: 10.1109/LMWC.2006.882385
[15]	Yang J, Kim C Y, Kim D W, et al. Design of a 24-GHz CMOS VCO with an asymmetric-width transformer. IEEE Trans Circuits Syst, 2010, 57(3):173 doi: 10.1109/TCSII.2010.2043381
[16]	Choi T Y, Lee H, Katehi L P B, et al. A low phase noise 10 GHz VCO in 0.18μm CMOS process. The European Conference on Wireless Technology, 2005:273 https://engineering.purdue.edu/~saeedm/CC40.pdf
[17]	Ko S, Kim J G, Song T, et al. 20GHz integrated CMOS frequency sources with a quadrature VCO using transformers. IEEE Radio Frequency Integrated Circuits Symposium, 2004:269 https://engineering.purdue.edu/~saeedm/CC40.pdf
[18]	Liu R C, Chang H Y, Wang C H, et al. A 63 GHz VCO using a standard 0.25μm CMOS process. IEEE ISSCC, 2004:446
[19]	Wang Huan, Wang Zhigong, Feng Jun, et al. A 10GHz LC voltage-controlled oscillator in 0.25μm CMOS. Journal of Semiconductors, 2008, 29(3):484 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=07081101&flag=1

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Received: 25 July 2013 Revised: 13 August 2013 Online: Published: 01 January 2014

Article Navigation > Journal of Semiconductors > 2014 > 35(1): 015006

Dong Yan, Luhong Mao, Qiujie Su, Sheng Xie, Shilin Zhang. A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology[J]. Journal of Semiconductors, 2014, 35(1): 015006. doi: 10.1088/1674-4926/35/1/015006 ****D Yan, L H Mao, Q J Su, S Xie, S L Zhang. A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology[J]. J. Semicond., 2014, 35(1): 015006. doi: 10.1088/1674-4926/35/1/015006.

Citation:

Dong Yan, Luhong Mao, Qiujie Su, Sheng Xie, Shilin Zhang. A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology[J]. Journal of Semiconductors, 2014, 35(1): 015006. doi: 10.1088/1674-4926/35/1/015006 ****

D Yan, L H Mao, Q J Su, S Xie, S L Zhang. A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology[J]. J. Semicond., 2014, 35(1): 015006. doi: 10.1088/1674-4926/35/1/015006.

Citation:

D Yan, L H Mao, Q J Su, S Xie, S L Zhang. A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology[J]. J. Semicond., 2014, 35(1): 015006. doi: 10.1088/1674-4926/35/1/015006.

PDF( 212 KB)

A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

DOI: 10.1088/1674-4926/35/1/015006

School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China

Funds:

the National Natural Science Foundation of China 61331003

Project supported by the National Natural Science Foundation of China (No. 61331003)

More Information

Corresponding author: Mao Luhong, Email:13622122693@139.com
Received Date: 2013-07-25
Revised Date: 2013-08-13
Published Date: 2014-01-01

Abstract

Abstract

This paper presents a millimeter wave (mm-wave) oscillator that generates signal at 36.56 GHz. The mm-wave oscillator is realized in a UMC 0.18 μm CMOS process. The linear superposition (LS) technique breaks through the limit of cut-off frequency (f_T), and realizes a much higher oscillation than f_T. Measurement results show that the LS oscillator produces a calibrated -37.17 dBm output power when biased at 1.8 V; the output power of fundamental signal is -10.85 dBm after calibration. The measured phase noise at 1 MHz frequency offset is -112.54 dBc/Hz at the frequency of 9.14 GHz. This circuit can be properly applied to mm-wave communication systems with advantages of low cost and high integration density.
- mm-wave signal generation,
- linear superposition,
- oscillator,
- CMOS process

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References(19)

References

[1]	Lee J, Li Y A, Hung M H, et al. A fully-integrated 77-GHz FMCW radar transceiver in 65-nm CMOS technology. IEEE J Solid-State Circuits, 2010, 45(12):2746 doi: 10.1109/JSSC.2010.2075250
[2]	Tiebout M, Wohlmuth H D, Knapp H, et al. Low power wideband receiver and transmitter chipset for mm-wave imaging in SiGe bipolar technology. IEEE J Solid-State Circuits, 2012, 47(5):1175 doi: 10.1109/JSSC.2012.2185570
[3]	Lu X, Lee C M, Wu S Y, et al. GaN-based S₀-wave sensors on silicon for chemical and biological sensing in liquid environments. IEEE Sensors J, 2013, 13(4):1245 doi: 10.1109/JSEN.2012.2231958
[4]	Pi Z, Khan F, et al. An introduction to millimeter-wave mobile broadband systems. IEEE Commun Mag, 2011, 49(6):101 doi: 10.1109/MCOM.2011.5783993
[5]	Huang Yinkun, Wu Danyu, Zhou Lei, et al. A 23 GHz low power VCO in SiGe BiCMOS technology. Journal of Semiconductors, 2013, 34(4):045003 doi: 10.1088/1674-4926/34/4/045003
[6]	Cheng Wei, Wang Yuan, Zhao Yan, et al. A THz InGaAs/InP double heterojunction bipolar transistor with f_max=325 GHz and BV_CBO=10.6 V. Journal of Semiconductors, 2013, 34(5):054006 doi: 10.1088/1674-4926/34/5/054006
[7]	Liu J, Chien H C, Fan S H, et al. Efficient optical millimeter-wave generation using a frequency-tripling Fabry-Perot laser with sideband injection and synchronization. IEEE Photonics Technol Lett, 2011, 23(18):1325 doi: 10.1109/LPT.2011.2159834
[8]	Cao C, Seok E, K K O. 192 GHz push-push VCO in 0.13μm CMOS. Electron Lett, 2006, 42(4):208 doi: 10.1049/el:20064159
[9]	Li X, Yu J, Dong Z, et al. Photonics millimeter-wave generation in the E-band and bidirectional transmission. IEEE Photonics J, 2013, 5(1):7900107 doi: 10.1109/JPHOT.2013.2241419
[10]	Razavi B. Design of analog CMOS integrated circuits. Singapore:McGraw-Hill, 2001
[11]	Huang D, LaRocca T R, Chang M C F, et al. Terahertz CMOS frequency generator using linear superposition technique. IEEE J Solid-State Circuits, 2008, 43(12):2730 doi: 10.1109/JSSC.2008.2004868
[12]	Shang Y, Yu H, Cai D, et al. Design of high-Q millimeter-wave oscillator by differential transmission line loaded with metamaterial resonator in 65-nm CMOS. IEEE Trans Microw Theory Tech, 2013, 61(5):1892 doi: 10.1109/TMTT.2013.2253489
[13]	Kim D D, Kim J, Plouchart J O, et al. A 70 GHz manufacturable complementary LC-VCO with 6.14 GHz tuning range in 65 nm SOI CMOS. IEEE ISSCC, 2007:540 doi: 10.1007%2Fs10470-011-9747-x.pdf
[14]	Cao C, Kenneth K O. A 140-GHz fundamental mode voltage-controlled oscillator in 90-nm CMOS technology. IEEE Microw Wireless Compon Lett, 2006, 16(10):555 doi: 10.1109/LMWC.2006.882385
[15]	Yang J, Kim C Y, Kim D W, et al. Design of a 24-GHz CMOS VCO with an asymmetric-width transformer. IEEE Trans Circuits Syst, 2010, 57(3):173 doi: 10.1109/TCSII.2010.2043381
[16]	Choi T Y, Lee H, Katehi L P B, et al. A low phase noise 10 GHz VCO in 0.18μm CMOS process. The European Conference on Wireless Technology, 2005:273 https://engineering.purdue.edu/~saeedm/CC40.pdf
[17]	Ko S, Kim J G, Song T, et al. 20GHz integrated CMOS frequency sources with a quadrature VCO using transformers. IEEE Radio Frequency Integrated Circuits Symposium, 2004:269 https://engineering.purdue.edu/~saeedm/CC40.pdf
[18]	Liu R C, Chang H Y, Wang C H, et al. A 63 GHz VCO using a standard 0.25μm CMOS process. IEEE ISSCC, 2004:446
[19]	Wang Huan, Wang Zhigong, Feng Jun, et al. A 10GHz LC voltage-controlled oscillator in 0.25μm CMOS. Journal of Semiconductors, 2008, 29(3):484 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=07081101&flag=1

A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

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