Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

Yamin Zhang; Shiwei Feng; Hui Zhu; Xueqin Gong; Bing Deng; Lin Ma

doi:10.1088/1674-4926/35/10/104003

J. Semicond. > 2014, Volume 35 > Issue 10 > 104003

SEMICONDUCTOR DEVICES

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

Yamin Zhang, Shiwei Feng, Hui Zhu, Xueqin Gong, Bing Deng and Lin Ma

+ Author Affiliations

Corresponding author: Feng Shiwei, Email:shwfeng@bjut.edu.cn

DOI: 10.1088/1674-4926/35/10/104003

Abstract: The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has been analyzed. Our results show that temperature is the main factor for the drain current lag. The time that the drain current takes to reach a steady state depends on the thermal time constant, which is 80 μs in this case. The dynamics of the trapping of electron and channel electron density under drain turn-on pulse voltage are discussed in detail, which indicates that the accepter traps in the buffer are the major reason for the current collapse when the electric field significantly changes. The channel electron density has been shown to increase as the channel temperature rises.

Key words: AlGaN/GaN HEMTs, drain transient response, channel temperature rise, self-heating, traps

References

[1]	Wang C, Chong C, He Y, et al. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs. Journal of Semiconductors, 2014, 35(1):014008 doi: 10.1088/1674-4926/35/1/014008
[2]	Chu F, Chen C, Liu X. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation. Journal of Semiconductors, 2014, 35(3):034007 doi: 10.1088/1674-4926/35/3/034007
[3]	Yang Z, Wang J, Xu Z, et al. Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress. Journal of Semiconductors, 2014, 35(1):014007 doi: 10.1088/1674-4926/35/1/014007
[4]	Zhang Y, Feng S, Zhu H, et al. Effect of self-heating on the drain current transient response in AlGaN/GaN HEMTs. IEEE Electron Device Lett, 2014, 35(3):345 doi: 10.1109/LED.2014.2300856
[5]	Tirado J M, Sánchez-Rojas J L, Izpura J I. Trapping effects in the transient response of AlGaN/GaN HEMT devices. IEEE Trans Electron Devices, 2007, 54(3):410 doi: 10.1109/TED.2006.890592
[6]	Wang X D, Hu W D, Chen X S, et al. The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs. IEEE Trans Electron Devices, 2012, 59(5):1393 doi: 10.1109/TED.2012.2188634
[7]	Zhang W, Zhang Y, Mao W, et al. Influence of the interface acceptor-like traps on the transient response of AlGaN/GaN HEMTs. IEEE Electron Device Lett, 2013, 34(1):45 doi: 10.1109/LED.2012.2227235
[8]	Miccoli C, Martino V C, Reina S, et al. Trapping and thermal effects analysis for AlGaN/GaN HEMTs by means of TCAD simulations. IEEE Electron Device Lett, 2013, 34(9):1121 doi: 10.1109/LED.2013.2274326
[9]	Hu W D, Chen X S, Yin F, et al. Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors. J Appl Phys, 2009, 105(8):084502 doi: 10.1063/1.3106603
[10]	Turin V O, Balandin A A. Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors. J Appl Phys, 2006, 100(5):054501 doi: 10.1063/1.2336299
[11]	Hu W D, Chen X S, Quan Z J, et al. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects. J Appl Phys, 2006, 100(7):074501 doi: 10.1063/1.2354327
[12]	Zhang Y, Feng S, Zhu H, et al. Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs. Microelectron Reliab, 2013, 53(5):694 doi: 10.1016/j.microrel.2013.02.004
[13]	Meneghesso G, Meneghini M, Bisi D, et al. Trapping phenomena in AlGaN/GaN HEMTs:a study based on pulsed and transient measurements. Semicond Sci Technol, 2013, 28(7):074021 doi: 10.1088/0268-1242/28/7/074021
[14]	Manoi A, Pomeroy J W, Killat N, et al. Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates:implications of the nucleation layer microstructure. IEEE Electron Device Lett, 2010, 31(12):1395 doi: 10.1109/LED.2010.2077730
[15]	Wang L, Fjeldly T A, Iniguez B, et al. Self-heating and kink effects in a-Si:H thin film transistors. IEEE Trans Electron Devices, 2000, 47(2):387 doi: 10.1109/16.822285
[16]	Wang M, Chen K J. Kink effect in AlGaN/GaN HEMTs induced by drain and gate pumping. IEEE Electron Device Lett, 2011, 32(4):482 doi: 10.1109/LED.2011.2105460
[17]	Nakkala P, Martin A, Campovecchio M, et al. Pulsed characterisation of trapping dynamics in AlGaN/GaN HEMTs. Electron Lett, 2013, 49(22):1406 doi: 10.1049/el.2013.2304
[18]	Maeda N, Tsubaki K, Saitoh T, et al. High-temperature electron transport properties in AlGaN/GaN heterostructures. Appl Phys Lett, 2001, 79(11):1634 doi: 10.1063/1.1400779

Fig. 1. The schematic of the device structure. (a) The structure parameters of device used for simulated. (b) The diagram of the circuit connection. It is used in simulations with a transient drain-source voltage to obtain the drain current response versus time.

DownLoad: Full-Size Img PowerPoint

Fig. 2. The simulated I_DS(t) transients in response to V_DS turn on pulse with V_DD = 10 V. The inset show the I_DS(t) and channel temperature transients in response to V_DS turn-on pulse with V_DD = 10, 7.5, 5 V, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 3. Simulation of IDS(t) transient in response to VDS turn on pulse with and without traps. The inset shows that the spatial distributions of trapped charge density evolution under the pulse-on drain bias.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (a) The GaN buffer layer electron density distribution. (b) The channel electron density after VDD is applied.

DownLoad: Full-Size Img PowerPoint

Fig. 5. Channel electron density evolution in different rise times.

DownLoad: Full-Size Img PowerPoint

Table 1. The physical parameters of the material.

[1]	Wang C, Chong C, He Y, et al. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs. Journal of Semiconductors, 2014, 35(1):014008 doi: 10.1088/1674-4926/35/1/014008
[2]	Chu F, Chen C, Liu X. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation. Journal of Semiconductors, 2014, 35(3):034007 doi: 10.1088/1674-4926/35/3/034007
[3]	Yang Z, Wang J, Xu Z, et al. Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress. Journal of Semiconductors, 2014, 35(1):014007 doi: 10.1088/1674-4926/35/1/014007
[4]	Zhang Y, Feng S, Zhu H, et al. Effect of self-heating on the drain current transient response in AlGaN/GaN HEMTs. IEEE Electron Device Lett, 2014, 35(3):345 doi: 10.1109/LED.2014.2300856
[5]	Tirado J M, Sánchez-Rojas J L, Izpura J I. Trapping effects in the transient response of AlGaN/GaN HEMT devices. IEEE Trans Electron Devices, 2007, 54(3):410 doi: 10.1109/TED.2006.890592
[6]	Wang X D, Hu W D, Chen X S, et al. The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs. IEEE Trans Electron Devices, 2012, 59(5):1393 doi: 10.1109/TED.2012.2188634
[7]	Zhang W, Zhang Y, Mao W, et al. Influence of the interface acceptor-like traps on the transient response of AlGaN/GaN HEMTs. IEEE Electron Device Lett, 2013, 34(1):45 doi: 10.1109/LED.2012.2227235
[8]	Miccoli C, Martino V C, Reina S, et al. Trapping and thermal effects analysis for AlGaN/GaN HEMTs by means of TCAD simulations. IEEE Electron Device Lett, 2013, 34(9):1121 doi: 10.1109/LED.2013.2274326
[9]	Hu W D, Chen X S, Yin F, et al. Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors. J Appl Phys, 2009, 105(8):084502 doi: 10.1063/1.3106603
[10]	Turin V O, Balandin A A. Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors. J Appl Phys, 2006, 100(5):054501 doi: 10.1063/1.2336299
[11]	Hu W D, Chen X S, Quan Z J, et al. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects. J Appl Phys, 2006, 100(7):074501 doi: 10.1063/1.2354327
[12]	Zhang Y, Feng S, Zhu H, et al. Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs. Microelectron Reliab, 2013, 53(5):694 doi: 10.1016/j.microrel.2013.02.004
[13]	Meneghesso G, Meneghini M, Bisi D, et al. Trapping phenomena in AlGaN/GaN HEMTs:a study based on pulsed and transient measurements. Semicond Sci Technol, 2013, 28(7):074021 doi: 10.1088/0268-1242/28/7/074021
[14]	Manoi A, Pomeroy J W, Killat N, et al. Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates:implications of the nucleation layer microstructure. IEEE Electron Device Lett, 2010, 31(12):1395 doi: 10.1109/LED.2010.2077730
[15]	Wang L, Fjeldly T A, Iniguez B, et al. Self-heating and kink effects in a-Si:H thin film transistors. IEEE Trans Electron Devices, 2000, 47(2):387 doi: 10.1109/16.822285
[16]	Wang M, Chen K J. Kink effect in AlGaN/GaN HEMTs induced by drain and gate pumping. IEEE Electron Device Lett, 2011, 32(4):482 doi: 10.1109/LED.2011.2105460
[17]	Nakkala P, Martin A, Campovecchio M, et al. Pulsed characterisation of trapping dynamics in AlGaN/GaN HEMTs. Electron Lett, 2013, 49(22):1406 doi: 10.1049/el.2013.2304
[18]	Maeda N, Tsubaki K, Saitoh T, et al. High-temperature electron transport properties in AlGaN/GaN heterostructures. Appl Phys Lett, 2001, 79(11):1634 doi: 10.1063/1.1400779

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Received: 26 February 2014 Revised: 16 April 2014 Online: Published: 01 October 2014

Article Navigation > Journal of Semiconductors > 2014 > 35(10): 104003

Yamin Zhang, Shiwei Feng, Hui Zhu, Xueqin Gong, Bing Deng, Lin Ma. Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2014, 35(10): 104003. doi: 10.1088/1674-4926/35/10/104003 ****Y M Zhang, S W Feng, H Zhu, X Q Gong, B Deng, L Ma. Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs[J]. J. Semicond., 2014, 35(10): 104003. doi: 10.1088/1674-4926/35/10/104003.

Citation:

Yamin Zhang, Shiwei Feng, Hui Zhu, Xueqin Gong, Bing Deng, Lin Ma. Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2014, 35(10): 104003. doi: 10.1088/1674-4926/35/10/104003 ****

Y M Zhang, S W Feng, H Zhu, X Q Gong, B Deng, L Ma. Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs[J]. J. Semicond., 2014, 35(10): 104003. doi: 10.1088/1674-4926/35/10/104003.

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Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

DOI: 10.1088/1674-4926/35/10/104003

Institute of Semiconductor Device Reliability Physics, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China

Funds:

Doctoral Fund of Innovation of Beijing University of Technology

Guangdong Strategic Emerging Industry Project of China 2012A080304003

Beijing Natural Science Foundation 4132022

Beijing Natural Science Foundation 4122005

Project supported by the National Natural Science Foundation of China (Nos.61376077, 61201046, 61204081), the Beijing Natural Science Foundation (Nos.4132022, 4122005), the Guangdong Strategic Emerging Industry Project of China (No.2012A080304003), and the Doctoral Fund of Innovation of Beijing University of Technology

Project supported by the National Natural Science Foundation of China 61376077

Project supported by the National Natural Science Foundation of China 61204081

Project supported by the National Natural Science Foundation of China 61201046

More Information

Corresponding author: Feng Shiwei, Email:shwfeng@bjut.edu.cn
Received Date: 2014-02-26
Revised Date: 2014-04-16
Published Date: 2014-10-01

Abstract

Abstract

The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has been analyzed. Our results show that temperature is the main factor for the drain current lag. The time that the drain current takes to reach a steady state depends on the thermal time constant, which is 80 μs in this case. The dynamics of the trapping of electron and channel electron density under drain turn-on pulse voltage are discussed in detail, which indicates that the accepter traps in the buffer are the major reason for the current collapse when the electric field significantly changes. The channel electron density has been shown to increase as the channel temperature rises.
- AlGaN/GaN HEMTs,
- drain transient response,
- channel temperature rise,
- self-heating,
- traps

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References(18)

References

[1]	Wang C, Chong C, He Y, et al. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs. Journal of Semiconductors, 2014, 35(1):014008 doi: 10.1088/1674-4926/35/1/014008
[2]	Chu F, Chen C, Liu X. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation. Journal of Semiconductors, 2014, 35(3):034007 doi: 10.1088/1674-4926/35/3/034007
[3]	Yang Z, Wang J, Xu Z, et al. Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress. Journal of Semiconductors, 2014, 35(1):014007 doi: 10.1088/1674-4926/35/1/014007
[4]	Zhang Y, Feng S, Zhu H, et al. Effect of self-heating on the drain current transient response in AlGaN/GaN HEMTs. IEEE Electron Device Lett, 2014, 35(3):345 doi: 10.1109/LED.2014.2300856
[5]	Tirado J M, Sánchez-Rojas J L, Izpura J I. Trapping effects in the transient response of AlGaN/GaN HEMT devices. IEEE Trans Electron Devices, 2007, 54(3):410 doi: 10.1109/TED.2006.890592
[6]	Wang X D, Hu W D, Chen X S, et al. The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs. IEEE Trans Electron Devices, 2012, 59(5):1393 doi: 10.1109/TED.2012.2188634
[7]	Zhang W, Zhang Y, Mao W, et al. Influence of the interface acceptor-like traps on the transient response of AlGaN/GaN HEMTs. IEEE Electron Device Lett, 2013, 34(1):45 doi: 10.1109/LED.2012.2227235
[8]	Miccoli C, Martino V C, Reina S, et al. Trapping and thermal effects analysis for AlGaN/GaN HEMTs by means of TCAD simulations. IEEE Electron Device Lett, 2013, 34(9):1121 doi: 10.1109/LED.2013.2274326
[9]	Hu W D, Chen X S, Yin F, et al. Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors. J Appl Phys, 2009, 105(8):084502 doi: 10.1063/1.3106603
[10]	Turin V O, Balandin A A. Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors. J Appl Phys, 2006, 100(5):054501 doi: 10.1063/1.2336299
[11]	Hu W D, Chen X S, Quan Z J, et al. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects. J Appl Phys, 2006, 100(7):074501 doi: 10.1063/1.2354327
[12]	Zhang Y, Feng S, Zhu H, et al. Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs. Microelectron Reliab, 2013, 53(5):694 doi: 10.1016/j.microrel.2013.02.004
[13]	Meneghesso G, Meneghini M, Bisi D, et al. Trapping phenomena in AlGaN/GaN HEMTs:a study based on pulsed and transient measurements. Semicond Sci Technol, 2013, 28(7):074021 doi: 10.1088/0268-1242/28/7/074021
[14]	Manoi A, Pomeroy J W, Killat N, et al. Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates:implications of the nucleation layer microstructure. IEEE Electron Device Lett, 2010, 31(12):1395 doi: 10.1109/LED.2010.2077730
[15]	Wang L, Fjeldly T A, Iniguez B, et al. Self-heating and kink effects in a-Si:H thin film transistors. IEEE Trans Electron Devices, 2000, 47(2):387 doi: 10.1109/16.822285
[16]	Wang M, Chen K J. Kink effect in AlGaN/GaN HEMTs induced by drain and gate pumping. IEEE Electron Device Lett, 2011, 32(4):482 doi: 10.1109/LED.2011.2105460
[17]	Nakkala P, Martin A, Campovecchio M, et al. Pulsed characterisation of trapping dynamics in AlGaN/GaN HEMTs. Electron Lett, 2013, 49(22):1406 doi: 10.1049/el.2013.2304
[18]	Maeda N, Tsubaki K, Saitoh T, et al. High-temperature electron transport properties in AlGaN/GaN heterostructures. Appl Phys Lett, 2001, 79(11):1634 doi: 10.1063/1.1400779

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