Fig. 1.
(a) The dishing measurement location and (b) erosion measurement location on the pattern wafer
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| Citation: |
Guodong Chen, Yuling Liu, Xinhuan Niu. Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP[J]. Journal of Semiconductors, 2014, 35(11): 116003. doi: 10.1088/1674-4926/35/11/116003
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G D Chen, Y L Liu, X H Niu. Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP[J]. J. Semicond., 2014, 35(11): 116003. doi: 10.1088/1674-4926/35/11/116003.
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Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP
DOI: 10.1088/1674-4926/35/11/116003
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Abstract
The influence of three kinds of guanidinium salt on the removal rate selectivity of different materials was studied during the barrier chemical mechanical polishing (CMP) process at first. The three kinds of guanidine saltguanidine hydrochloride, guanidine nitrate and guanidine carbonate. Then we compared the effect of the three kinds of guanidine salt on the dishing, erosion and surface roughness value. In the end, the reaction mechanism was studied through electrochemical analysis. All the results indicate that there is a better performance of the slurry with guanidine hydrochloride than the slurries with the other two kinds of guanidine salt. It effectively improved the removal rate selectivity and the surface roughness under the premise of low abrasive concentration and low polishing pressure, which is good for the optimization of the alkaline slurry for the barrier CMP process.-
Keywords:
- guanidinium,
- removal rate selectivity,
- electrochemical,
- CMP
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References
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