J. Semicond. > 2014, Volume 35 > Issue 12 > 124003
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SEMICONDUCTOR DEVICES

Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Jingtao Zhao1, Zhaojun Lin1, , Chongbiao Luan1, Ming Yang1, Yang Zhou1, Yuanjie Lü2 and Zhihong Feng2

+ Author Affiliations

 Corresponding author: Lin Zhaojun, Email:linzj@sdu.edu.cn

DOI: 10.1088/1674-4926/35/12/124003

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Abstract: Using the measured capacitance-voltage and current-voltage characteristics of the rectangular AlN/GaN heterostructure field-effect transistors (HFETs) with the side-Ohmic contacts, it was found that the polarization Coulomb field scattering in the AlN/GaN HFETs was greatly weakened after the side-Ohmic contact processing, however, it still could not be ignored. It was also found that, with side-Ohmic contacts, the polarization Coulomb field scattering was much stronger in AlN/GaN HFETs than in AlGaN/AlN/GaN and In0.17Al0.83N/AlN/GaN HFETs, which was attributed to the extremely thinner barrier layer and the stronger polarization of the AlN/GaN heterostructure.

Key words: side-ohmic contact, AlN/GaN, heterostructure field effect transistor



[1]
Polyakov A Y, Smirnov N B, Govorkov A V, et al. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions. J Appl Phys, 2008, 104:053702 doi: 10.1063/1.2973463
[2]
Gu Guodong, Dun Shaobo, Lv Yuanjie, et al. Low ohmic contact AlN/GaN HEMTs grown by MOCVD. Journal of Semiconductors, 2013, 34(11):114004 doi: 10.1088/1674-4926/34/11/114004
[3]
Zhou Xiaojuan, Ban Shiliang. Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure. Journal of Semiconductors, 2009, 30(8):082001 doi: 10.1088/1674-4926/30/8/082001
[4]
Hao Yue, Zhang Jinfeng, Shen Bo, et al. Progress in group Ⅲ nitride semiconductor electronic devices. Journal of Semiconductors, 2012, 33(8):081001 doi: 10.1088/1674-4926/33/8/081001
[5]
Lv Yuanjie, Feng Zhihong, Han Tinging, et al. Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Appl Phys Lett, 2013, 103:113502 doi: 10.1063/1.4820960
[6]
Luan C B, Lin Z J, Feng Z H, et al. Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. J Appl Phys, 2012, 112:054513 doi: 10.1063/1.4752254
[7]
González-Posada F, Rivera C, Muñoz E. The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures. Appl Phys Lett, 2009, 95:203504 doi: 10.1063/1.3263955
[8]
Luan C B, Lin Z J, Lv Y J, et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Appl Phys Lett, 2012, 101:113501 doi: 10.1063/1.4752232
[9]
Luan C B, Lin Z J, Lv Y J, et al. Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors. Appl Phys A, 2014, 116(4):2065 doi: 10.1007/s00339-014-8403-6
[10]
Zhao J Z, Lin Z J, Corrigan T D, et al. Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures. Appl Phys Lett, 2007, 91:173507 doi: 10.1063/1.2798500
[11]
Lv Y J, Lin Z J, Zhang Y, et al. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Appl Phys Lett, 2011, 98:123512 doi: 10.1063/1.3569138
[12]
Cao Y, Debdeep J. High-mobility window for two-dimensional electron gases at ultrathin AlN/GaN heterojunctions. Appl Phys Lett, 2007, 90:182112 doi: 10.1063/1.2736207
[13]
Fiorentini V, Bernardini F, Ambacher O. Evidence for nonlinear macroscopic polarization in Ⅲ-Ⅴ nitride alloy heterostructures. Appl Phys Lett, 2002, 80:1204 doi: 10.1063/1.1448668
[14]
Ridley B K, Foutz B E, Eastman L F. Mobility of electrons in bulk GaN and AlxGa1-xN/GaN heterostructures. Phys Rev B, 2000, 61(24):16862 doi: 10.1103/PhysRevB.61.16862
[15]
Ng H M, Doppalapudi D, Moustakas T D, et al. The role of dislocation scattering in n-type GaN films. Appl Phys Lett, 1998, 73:821 doi: 10.1063/1.122012
Fig. 1.  Schematic illustration of the AlN/GaN HFET with side-Ohmic contacts.

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Fig. 2.  (a) The measured $C$-$V$ curves and (b) the calculated 2DEG electron density $n_{\rm 2D}$ under different gate biases at room temperature for the prepared AlN/GaN HFETs with different gate lengths.

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Fig. 3.  The measured $I$-$V$ curves at room temperature for the prepared samples with different gate lengths.

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Fig. 4.  (a) Electron mobility of the 2DEG under different gate biases at room temperature for the prepared AlN/GaN HFET devices with side-Ohmic contacts. (b), (c), (d) The same as (a) but for AlN/GaN HFET devices with normal-Ohmic contacts (Ref.[5]), AlGaN/AlN/GaN HFET devices with side-Ohmic contacts (Ref.[8]) and In$_{0.17}$Al$_{0.83}$N/AlN/GaN HFET devices with side-Ohmic contacts (Ref.[9]), respectively. All the samples are in the same size.

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Table 1.   The measured series resistances for the AlN/GaN HFETs with different gate lengths.
[1]
Polyakov A Y, Smirnov N B, Govorkov A V, et al. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions. J Appl Phys, 2008, 104:053702 doi: 10.1063/1.2973463
[2]
Gu Guodong, Dun Shaobo, Lv Yuanjie, et al. Low ohmic contact AlN/GaN HEMTs grown by MOCVD. Journal of Semiconductors, 2013, 34(11):114004 doi: 10.1088/1674-4926/34/11/114004
[3]
Zhou Xiaojuan, Ban Shiliang. Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure. Journal of Semiconductors, 2009, 30(8):082001 doi: 10.1088/1674-4926/30/8/082001
[4]
Hao Yue, Zhang Jinfeng, Shen Bo, et al. Progress in group Ⅲ nitride semiconductor electronic devices. Journal of Semiconductors, 2012, 33(8):081001 doi: 10.1088/1674-4926/33/8/081001
[5]
Lv Yuanjie, Feng Zhihong, Han Tinging, et al. Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Appl Phys Lett, 2013, 103:113502 doi: 10.1063/1.4820960
[6]
Luan C B, Lin Z J, Feng Z H, et al. Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. J Appl Phys, 2012, 112:054513 doi: 10.1063/1.4752254
[7]
González-Posada F, Rivera C, Muñoz E. The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures. Appl Phys Lett, 2009, 95:203504 doi: 10.1063/1.3263955
[8]
Luan C B, Lin Z J, Lv Y J, et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Appl Phys Lett, 2012, 101:113501 doi: 10.1063/1.4752232
[9]
Luan C B, Lin Z J, Lv Y J, et al. Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors. Appl Phys A, 2014, 116(4):2065 doi: 10.1007/s00339-014-8403-6
[10]
Zhao J Z, Lin Z J, Corrigan T D, et al. Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures. Appl Phys Lett, 2007, 91:173507 doi: 10.1063/1.2798500
[11]
Lv Y J, Lin Z J, Zhang Y, et al. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Appl Phys Lett, 2011, 98:123512 doi: 10.1063/1.3569138
[12]
Cao Y, Debdeep J. High-mobility window for two-dimensional electron gases at ultrathin AlN/GaN heterojunctions. Appl Phys Lett, 2007, 90:182112 doi: 10.1063/1.2736207
[13]
Fiorentini V, Bernardini F, Ambacher O. Evidence for nonlinear macroscopic polarization in Ⅲ-Ⅴ nitride alloy heterostructures. Appl Phys Lett, 2002, 80:1204 doi: 10.1063/1.1448668
[14]
Ridley B K, Foutz B E, Eastman L F. Mobility of electrons in bulk GaN and AlxGa1-xN/GaN heterostructures. Phys Rev B, 2000, 61(24):16862 doi: 10.1103/PhysRevB.61.16862
[15]
Ng H M, Doppalapudi D, Moustakas T D, et al. The role of dislocation scattering in n-type GaN films. Appl Phys Lett, 1998, 73:821 doi: 10.1063/1.122012

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    Received: 23 April 2014 Revised: 15 July 2014 Online: Published: 01 December 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(12): 124003
      Jingtao Zhao, Zhaojun Lin, Chongbiao Luan, Ming Yang, Yang Zhou, Yuanjie Lü, Zhihong Feng. Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. Journal of Semiconductors, 2014, 35(12): 124003. doi: 10.1088/1674-4926/35/12/124003 ****J T Zhao, Z J Lin, C B Luan, M Yang, Y Zhou, Y J Lü, Z H Feng. Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. J. Semicond., 2014, 35(12): 124003. doi:  10.1088/1674-4926/35/12/124003.
      Citation:
      Jingtao Zhao, Zhaojun Lin, Chongbiao Luan, Ming Yang, Yang Zhou, Yuanjie Lü, Zhihong Feng. Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. Journal of Semiconductors, 2014, 35(12): 124003. doi: 10.1088/1674-4926/35/12/124003 ****
      J T Zhao, Z J Lin, C B Luan, M Yang, Y Zhou, Y J Lü, Z H Feng. Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. J. Semicond., 2014, 35(12): 124003. doi:  10.1088/1674-4926/35/12/124003.
      shu

      Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

      DOI: 10.1088/1674-4926/35/12/124003
      • 1.

        School of Physics, Shandong University, Jinan 250100, China

      • 2.

        National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

      Funds:

      the National Natural Science Foundation of China Nos. 11174182

      Project supported by the National Natural Science Foundation of China (Nos. 11174182, 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20110131110005)

      the Specialized Research Fund for the Doctoral Program of Higher Education No. 20110131110005

      the National Natural Science Foundation of China 61306113

      More Information
      • Corresponding author: Lin Zhaojun, Email:linzj@sdu.edu.cn
      • Received Date: 2014-04-23
      • Revised Date: 2014-07-15
      • Published Date: 2014-12-01

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