Fig. 1.
Electrical properties of the Cu films deposited on PET substrates with a 20 nm Ga$_{2}$ O$_{3}$ layer.
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| Citation: |
Huihui Zhuang, Jinliang Yan, Chengyang Xu, Delan Meng. Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates[J]. Journal of Semiconductors, 2014, 35(5): 053001. doi: 10.1088/1674-4926/35/5/053001
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H H Zhuang, J L Yan, C Y Xu, D L Meng. Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates[J]. J. Semicond., 2014, 35(5): 053001. doi: 10.1088/1674-4926/35/5/053001.
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Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates
DOI: 10.1088/1674-4926/35/5/053001
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Abstract
Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga2O3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga2O3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga2O3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga2O3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96×10-3 Ω -1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga2O3 layer thickness of 15 nm. -
References
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