J. Semicond. > 2014, Volume 35 > Issue 5 > 055006
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SEMICONDUCTOR INTEGRATED CIRCUITS

A 0.6 V 10 bit 1 MS/s monotonic switching SAR ADC with common mode stabilizer in 0.13 μm CMOS

Wei Lü1, Duona Luo1, Fengcheng Mei1, Jiaqi Yang1, Libin Yao2, Lin He1, and Fujiang Lin1

+ Author Affiliations

 Corresponding author: He Lin, Email:helin77@ustc.edu.cn

DOI: 10.1088/1674-4926/35/5/055006

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Abstract: This paper presents a 0.6 V 10 bit successive approximation register (SAR) ADC design dedicated to the wireless sensor network application. It adopts a monotonic switching scheme in the DAC to save chip area and power consumption. The main drawback of the monotonic switching scheme is its large common mode shift and the associated comparator offset variation. Due to the limited headroom at the 0.6 V supply voltage, the conventional constant current biasing technique cannot be applied to the dynamic comparator. In this design, a common mode stabilizer is introduced to address this issue in low-voltage design. The effectiveness of this method is verified through both simulation and measurement results. Fabricated with 1P8M 0.13 μm CMOS technology, the proposed SAR ADC consumes 6.3 μW at 1 MS/s from a 0.6 V supply, and achieves 51.25 dB SNDR at the Nyquist frequency and FOM of 21 fJ/conversion-step. The core area is only 120×300 μm2.

Key words: SAR ADC, monotonic switching, common mode stabilizer, comparator offset



[1]
Rajput S S, Jamuar S S. Low voltage analog circuit design techniques. IEEE Circuits Syst Mag, 2002, 2(1):24 doi: 10.1109/MCAS.2002.999703
[2]
Verma N, Chandrakasan A P. An ultra low energy 12-bit rate-resolution scalable SAR ADC for wireless sensor nodes. IEEE J Solid-State Circuits, 2007, 42(6):1196 doi: 10.1109/JSSC.2007.897157
[3]
Yip M, Chandrakasan A P. A resolution-reconfigurable 5-to-10-bit 0.4-to-1 V power scalable SAR ADC for sensor applications. IEEE J Solid-State Circuits, 2013, 48(6):1453 doi: 10.1109/JSSC.2013.2254551
[4]
Harpe P, Dolmans G, Philips K, et al. A 0.7 V 7-to-10 bit 0-to-2 MS/s flexible SAR ADC for ultra low-power wireless sensor nodes. IEEE European Solid-State Circuits Conference (ESSCIRC), 2012:373
[5]
Shikata A, Sekimoto R, Kuroda T, et al. A 0.5 V 1.1 MS/sec 6.3 fJ/conversion-step SAR-ADC with tri-level comparator in 40 nm CMOS. IEEE J Solid-State Circuits, 2012, 47(4):1022 doi: 10.1109/JSSC.2012.2185352
[6]
Lee S K, Park S J, Park H J, et al. A 1.3μW 0.6 V 8.7-ENOB successive approximation ADC in a 0.18μm CMOS. Symposium on VLSI Circuits Digest of Technical Papers, 2009:242 http://ieeexplore.ieee.org/document/5205346/
[7]
Lin G Y, Huang H Y, Hsieh C C, et al. A 0.05 mm2 0.6 V 500 kS/s 14.3 fJ/Conversion-step 11-bit two-step switching SAR ADC for 3-dimensional stacking CMOS imager. IEEE Asian Solid-State Circuits Conference (ASSCC), 2012:165
[8]
Liu C C, Chang S J, Huang G Y, et al. A 10-bit 50-MS/s SAR ADC with a monotonic capacitor switching procedure. IEEE J Solid-State Circuits, 2010, 45(4):731 doi: 10.1109/JSSC.2010.2042254
[9]
Zhu Y, Chan C H, Chio U F, et al. A 10-bit 100-MS/s reference-free SAR ADC in 90 nm CMOS. IEEE J Solid-State Circuits, 2010, 45(5):1111 http://ieeexplore.ieee.org/document/5482529/
[10]
Ginsburg B P, Chandrakasan A P. An energy-efficient charge recycling approach for a SAR converter with capacitive DAC. IEEE Int Symp Circuits and Systems (ISCAS), 2005:184 http://www.oalib.com/references/14375127
[11]
Liu C C, Chang S J, Huang G Y, et al. A 0.92 mW 10-bit 50-MS/s SAR ADC in 0.13μm CMOS process. Symposium on VLSI Circuits Digest of Technical Papers, 2009:236 http://ieeexplore.ieee.org/xpl/tocresult.jsp?sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number%3A6123555)%26rowsPerPage%3D75&pageNumber=1
[12]
Razavi B. Design of analog CMOS integrated circuits. New York: McGraw-Hill, Inc, 2000
[13]
Schinkel D, Mensink E, Klumperink E, et al. A double-tail latch-type voltage sense amplifier with 18 ps Setup+Hold time. IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2007:314 doi: 10.1007/s10470-011-9687-5
[14]
Chen S M, Brodersen R W. A 6-bit 600-MS/s 5.3-mW asynchronous ADC in 0.13-μm CMOS. IEEE J Solid-State Circuits, 2006, 41(12):2669 doi: 10.1109/JSSC.2006.884231
[15]
Promitzer G. 12-bit low-power fully differential noncalibrating successive approximation ADC with 1 MS/s. IEEE J Solid-State Circuits, 2001, 36(7):1138 doi: 10.1109/4.933473
[16]
Agnes A, Bonizzoni E, Malcovati P, et al. A 9.4-ENOB 1 V 3.8μW 100 kS/s SAR ADC with time-domain comparator. IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2008:246 doi: 10.1007/978-1-4614-1371-4_7
Fig. 1.  Block diagram of SAR ADC based on monotonic switching (MS) scheme

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Fig. 2.  Waveform of the MS procedure as well as its associated common mode (CM) shift

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Fig. 3.  Block diagram of the proposed SAR ADC with CMB

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Fig. 4.  Timing of comparison, CMS, and DAC settling

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Fig. 5.  Circuit of double tail dynamic comparator

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Fig. 6.  Block circuit of asynchronous control logic

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Fig. 7.  Simulated offset voltage of the p-type input comparator versus CM

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Fig. 8.  Simulation results of (a) DNL and (b) INL without CMS

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Fig. 9.  Simulation results of (a) DNL and (b) INL with CMS

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Fig. 10.  Die photograph of the proposed SAR ADC

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Fig. 11.  Measured (a) DNL and (b) INL of the proposed SAR ADC

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Fig. 12.  16384 points of FFT spectrum at (a) $f_{\rm in}$ = 40.039 kHz and (b) 489.2578 kHz

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Fig. 13.  Measured (a) dynamic performance versus input frequency at 1 MS/s, (b) dynamic performance versus sampling frequency with Nyquist rate input

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Table 1.   Monte Carlo simulation results

Table 2.   Performance comparison with other published SAR ADC
[1]
Rajput S S, Jamuar S S. Low voltage analog circuit design techniques. IEEE Circuits Syst Mag, 2002, 2(1):24 doi: 10.1109/MCAS.2002.999703
[2]
Verma N, Chandrakasan A P. An ultra low energy 12-bit rate-resolution scalable SAR ADC for wireless sensor nodes. IEEE J Solid-State Circuits, 2007, 42(6):1196 doi: 10.1109/JSSC.2007.897157
[3]
Yip M, Chandrakasan A P. A resolution-reconfigurable 5-to-10-bit 0.4-to-1 V power scalable SAR ADC for sensor applications. IEEE J Solid-State Circuits, 2013, 48(6):1453 doi: 10.1109/JSSC.2013.2254551
[4]
Harpe P, Dolmans G, Philips K, et al. A 0.7 V 7-to-10 bit 0-to-2 MS/s flexible SAR ADC for ultra low-power wireless sensor nodes. IEEE European Solid-State Circuits Conference (ESSCIRC), 2012:373
[5]
Shikata A, Sekimoto R, Kuroda T, et al. A 0.5 V 1.1 MS/sec 6.3 fJ/conversion-step SAR-ADC with tri-level comparator in 40 nm CMOS. IEEE J Solid-State Circuits, 2012, 47(4):1022 doi: 10.1109/JSSC.2012.2185352
[6]
Lee S K, Park S J, Park H J, et al. A 1.3μW 0.6 V 8.7-ENOB successive approximation ADC in a 0.18μm CMOS. Symposium on VLSI Circuits Digest of Technical Papers, 2009:242 http://ieeexplore.ieee.org/document/5205346/
[7]
Lin G Y, Huang H Y, Hsieh C C, et al. A 0.05 mm2 0.6 V 500 kS/s 14.3 fJ/Conversion-step 11-bit two-step switching SAR ADC for 3-dimensional stacking CMOS imager. IEEE Asian Solid-State Circuits Conference (ASSCC), 2012:165
[8]
Liu C C, Chang S J, Huang G Y, et al. A 10-bit 50-MS/s SAR ADC with a monotonic capacitor switching procedure. IEEE J Solid-State Circuits, 2010, 45(4):731 doi: 10.1109/JSSC.2010.2042254
[9]
Zhu Y, Chan C H, Chio U F, et al. A 10-bit 100-MS/s reference-free SAR ADC in 90 nm CMOS. IEEE J Solid-State Circuits, 2010, 45(5):1111 http://ieeexplore.ieee.org/document/5482529/
[10]
Ginsburg B P, Chandrakasan A P. An energy-efficient charge recycling approach for a SAR converter with capacitive DAC. IEEE Int Symp Circuits and Systems (ISCAS), 2005:184 http://www.oalib.com/references/14375127
[11]
Liu C C, Chang S J, Huang G Y, et al. A 0.92 mW 10-bit 50-MS/s SAR ADC in 0.13μm CMOS process. Symposium on VLSI Circuits Digest of Technical Papers, 2009:236 http://ieeexplore.ieee.org/xpl/tocresult.jsp?sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number%3A6123555)%26rowsPerPage%3D75&pageNumber=1
[12]
Razavi B. Design of analog CMOS integrated circuits. New York: McGraw-Hill, Inc, 2000
[13]
Schinkel D, Mensink E, Klumperink E, et al. A double-tail latch-type voltage sense amplifier with 18 ps Setup+Hold time. IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2007:314 doi: 10.1007/s10470-011-9687-5
[14]
Chen S M, Brodersen R W. A 6-bit 600-MS/s 5.3-mW asynchronous ADC in 0.13-μm CMOS. IEEE J Solid-State Circuits, 2006, 41(12):2669 doi: 10.1109/JSSC.2006.884231
[15]
Promitzer G. 12-bit low-power fully differential noncalibrating successive approximation ADC with 1 MS/s. IEEE J Solid-State Circuits, 2001, 36(7):1138 doi: 10.1109/4.933473
[16]
Agnes A, Bonizzoni E, Malcovati P, et al. A 9.4-ENOB 1 V 3.8μW 100 kS/s SAR ADC with time-domain comparator. IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2008:246 doi: 10.1007/978-1-4614-1371-4_7

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    Received: 21 October 2013 Revised: 05 November 2013 Online: Published: 01 May 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(5): 055006
      Wei Lü, Duona Luo, Fengcheng Mei, Jiaqi Yang, Libin Yao, Lin He, Fujiang Lin. A 0.6 V 10 bit 1 MS/s monotonic switching SAR ADC with common mode stabilizer in 0.13 μm CMOS[J]. Journal of Semiconductors, 2014, 35(5): 055006. doi: 10.1088/1674-4926/35/5/055006 ****W Lü, D N Luo, F C Mei, J Q Yang, L B Yao, L He, F J Lin. A 0.6 V 10 bit 1 MS/s monotonic switching SAR ADC with common mode stabilizer in 0.13 μm CMOS[J]. J. Semicond., 2014, 35(5): 055006. doi: 10.1088/1674-4926/35/5/055006.
      Citation:
      Wei Lü, Duona Luo, Fengcheng Mei, Jiaqi Yang, Libin Yao, Lin He, Fujiang Lin. A 0.6 V 10 bit 1 MS/s monotonic switching SAR ADC with common mode stabilizer in 0.13 μm CMOS[J]. Journal of Semiconductors, 2014, 35(5): 055006. doi: 10.1088/1674-4926/35/5/055006 ****
      W Lü, D N Luo, F C Mei, J Q Yang, L B Yao, L He, F J Lin. A 0.6 V 10 bit 1 MS/s monotonic switching SAR ADC with common mode stabilizer in 0.13 μm CMOS[J]. J. Semicond., 2014, 35(5): 055006. doi: 10.1088/1674-4926/35/5/055006.
      shu

      A 0.6 V 10 bit 1 MS/s monotonic switching SAR ADC with common mode stabilizer in 0.13 μm CMOS

      DOI: 10.1088/1674-4926/35/5/055006
      • 1.

        Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China

      • 2.

        Kunming Institute of Physics, Kunming 650223, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61204033) and the Natural Science Foundation of Jiangsu Province (No. BK2012214)

      the Natural Science Foundation of Jiangsu Province BK2012214

      the National Natural Science Foundation of China 61204033

      More Information
      • Corresponding author: He Lin, Email:helin77@ustc.edu.cn
      • Received Date: 2013-10-21
      • Revised Date: 2013-11-05
      • Published Date: 2014-05-01

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