Citation: |
Zhichao Li, Yuntao Liu, Zhangqu Kuang, Jie Chen. A capacitor-free high PSR CMOS low dropout voltage regulator[J]. Journal of Semiconductors, 2014, 35(6): 065004. doi: 10.1088/1674-4926/35/6/065004
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Z C Li, Y T Liu, Z Q Kuang, J Chen. A capacitor-free high PSR CMOS low dropout voltage regulator[J]. J. Semicond., 2014, 35(6): 065004. doi: 10.1088/1674-4926/35/6/065004.
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A capacitor-free high PSR CMOS low dropout voltage regulator
DOI: 10.1088/1674-4926/35/6/065004
More Information
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Abstract
This paper presents a capacitor-free CMOS low dropout voltage regulator which has high PSR performance and low chip area. Pole splitting and gm boosting techniques are employed to achieve good stability. The capacitor-free chip LDO was fabricated in commercial 0.18 μm CMOS technology provided by GSMC (Shanghai, China). Measured results show that the capacitor-free LDO has a stable output voltage 1.79 V, when supply voltage changes from 2.5 to 5 V, and the LDO is capable of driving maximum 100 mA load current. The LDO has high power supply rejection about -79 dB at low frequency and -40 dB at 1 MHz frequency, while sacrifice of the LDO's active chip-area is only smaller than 0.02 mm2.-
Keywords:
- CMOS,
- low dropout regulator,
- power supply rejection,
- capacitor-free
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References
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