Citation: |
Guodong Chen, Yuling Liu, Chenwei Wang, Weijuan Liu, Mengting Jiang, Haobo Yuan. Stability for a novel low-pH alkaline slurry during the copper chemical mechanical planarization[J]. Journal of Semiconductors, 2014, 35(8): 086001. doi: 10.1088/1674-4926/35/8/086001
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G D Chen, Y L Liu, C W Wang, W J Liu, M T Jiang, H B Yuan. Stability for a novel low-pH alkaline slurry during the copper chemical mechanical planarization[J]. J. Semicond., 2014, 35(8): 086001. doi: 10.1088/1674-4926/35/8/086001.
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Stability for a novel low-pH alkaline slurry during the copper chemical mechanical planarization
DOI: 10.1088/1674-4926/35/8/086001
More Information
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Abstract
The stability of a novel low-pH alkaline slurry (marked as slurry A, pH=8.5) for copper chemical mechanical planarization was investigated in this paper. First of all, the stability mechanism of the alkaline slurry was studied. Then many parameters have been tested for researching the stability of the slurry through comparing with a traditional alkaline slurry (marked as slurry B, pH=9.5), such as the pH value, particle size and zeta potential. Apart from this, the stability of the copper removal rate, dishing, erosion and surface roughness were also studied. All the results show that the stability of the novel low-pH alkaline slurry is better than the traditional alkaline slurry. The working-life of the novel low-pH alkaline slurry reaches 48 h.-
Keywords:
- stability,
- low-pH,
- alkaline slurry,
- copper multilevel,
- CMP
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References
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