J. Semicond. > 2014, Volume 35 > Issue 9 > 093003
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SEMICONDUCTOR MATERIALS

Significant improvement of ZnS film electrical and optical performance by indium incorporation

Jinhuo Chen and Wenjian Li

+ Author Affiliations

 Corresponding author: Chen Jinhuo, Email:yeschen@fzu.edu.cn

DOI: 10.1088/1674-4926/35/9/093003

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Abstract: This paper reports a new material, indium-doped ZnS (ZnS:In) film, which is fabricated for the first time to improve its electrical and optical performance. By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS:In film is prepared. XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation. The AFM results imply that large sized particles are compactly dispersed in the ZnS:In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46×10-2 Ω·cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical/optical performance has been made in this paper.

Key words: ZnS, indium incorporation, thin film, semiconductors



[1]
Kasap S, Capper P. Springer handbook of electronic and photonic materials. Berlin:Springer, 2006
[2]
Hariskos D, Spiering S, Powalla M, et al. Buffer layers in Cu(In, Ga)Se2 solar cells and modules. Thin Solid Films, 2005, 480/481:99 http://ci.nii.ac.jp/naid/30006200708
[3]
Kreger F. The chemistry of imperfect crystals. Amsterdam:North-Holland, 1964
[4]
Contreras M A, Nakada T, Hongo M. ZnO/ZnS(O, OH)/Cu(In, Ga)Se2/Mo solar cell with 18.6% efficiency. Proceedings of 3rd World Conference on of Photovoltaic Energy Conversion, Osaka, Japan, 2003, 1:570 http://www.sciencedirect.com/science/article/pii/S0927024814000191
[5]
Nagamani, Revathi N, Prathapc P. Al-doped ZnS layers synthesized by solution growth method. Curr Aool Phys, 2012, 12:380 doi: 10.1016/j.cap.2011.07.031
[6]
Lott K, Nirk T, Shinkarenko S. High temperature electrical conductivity in ZnS:Al and in CdSe:Al. Solid State Ionics, 2004, 173:83 doi: 10.1016/j.ssi.2004.07.056
[7]
Prathap P, Revath N, Subbaiah Y P V. Preparation and characterization of transparent conducting ZnS:Al films. Solid State Sci, 2009, 11:224 doi: 10.1016/j.solidstatesciences.2008.04.020
[8]
Brus V V, Kovalyuk Z D, Maryanchuk P D. Optical properties of TiO-MnO thin films prepared by electron-beam evaporation. Tech Phys, 2012, 57:1148 doi: 10.1134/S1063784212080063
[9]
Cullity B D, Stock S R. Elements of X-ray diffraction. 3rd ed. New Jersey:Prentice Hall, 2001
[10]
Zhang R, Wang B, Wei L. Sulfidation growth and characterization of nanocrystalline ZnS thin films. Vacuum, 2008, 82:1208 doi: 10.1016/j.vacuum.2008.02.003
Fig. 1.  XRD patterns of 0, 3, 6, 9 at.% In-doped ZnS film

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Fig. 2.  AFM image of 6 at.% In-doped ZnS film

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Fig. 3.  Transmittance spectra of ZnS films;inset are the profiles of ($\alpha hv$)2 versus $hv$

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Fig. 4.  ln$\sigma $ versus T-1 for ZnS:In film with different In contents

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[1]
Kasap S, Capper P. Springer handbook of electronic and photonic materials. Berlin:Springer, 2006
[2]
Hariskos D, Spiering S, Powalla M, et al. Buffer layers in Cu(In, Ga)Se2 solar cells and modules. Thin Solid Films, 2005, 480/481:99 http://ci.nii.ac.jp/naid/30006200708
[3]
Kreger F. The chemistry of imperfect crystals. Amsterdam:North-Holland, 1964
[4]
Contreras M A, Nakada T, Hongo M. ZnO/ZnS(O, OH)/Cu(In, Ga)Se2/Mo solar cell with 18.6% efficiency. Proceedings of 3rd World Conference on of Photovoltaic Energy Conversion, Osaka, Japan, 2003, 1:570 http://www.sciencedirect.com/science/article/pii/S0927024814000191
[5]
Nagamani, Revathi N, Prathapc P. Al-doped ZnS layers synthesized by solution growth method. Curr Aool Phys, 2012, 12:380 doi: 10.1016/j.cap.2011.07.031
[6]
Lott K, Nirk T, Shinkarenko S. High temperature electrical conductivity in ZnS:Al and in CdSe:Al. Solid State Ionics, 2004, 173:83 doi: 10.1016/j.ssi.2004.07.056
[7]
Prathap P, Revath N, Subbaiah Y P V. Preparation and characterization of transparent conducting ZnS:Al films. Solid State Sci, 2009, 11:224 doi: 10.1016/j.solidstatesciences.2008.04.020
[8]
Brus V V, Kovalyuk Z D, Maryanchuk P D. Optical properties of TiO-MnO thin films prepared by electron-beam evaporation. Tech Phys, 2012, 57:1148 doi: 10.1134/S1063784212080063
[9]
Cullity B D, Stock S R. Elements of X-ray diffraction. 3rd ed. New Jersey:Prentice Hall, 2001
[10]
Zhang R, Wang B, Wei L. Sulfidation growth and characterization of nanocrystalline ZnS thin films. Vacuum, 2008, 82:1208 doi: 10.1016/j.vacuum.2008.02.003

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    Received: 02 March 2014 Revised: 20 April 2014 Online: Published: 01 September 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(9): 093003
      Jinhuo Chen, Wenjian Li. Significant improvement of ZnS film electrical and optical performance by indium incorporation[J]. Journal of Semiconductors, 2014, 35(9): 093003. doi: 10.1088/1674-4926/35/9/093003 ****J H Chen, W J Li. Significant improvement of ZnS film electrical and optical performance by indium incorporation[J]. J. Semicond., 2014, 35(9): 093003. doi: 10.1088/1674-4926/35/9/093003.
      Citation:
      Jinhuo Chen, Wenjian Li. Significant improvement of ZnS film electrical and optical performance by indium incorporation[J]. Journal of Semiconductors, 2014, 35(9): 093003. doi: 10.1088/1674-4926/35/9/093003 ****
      J H Chen, W J Li. Significant improvement of ZnS film electrical and optical performance by indium incorporation[J]. J. Semicond., 2014, 35(9): 093003. doi: 10.1088/1674-4926/35/9/093003.
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      Significant improvement of ZnS film electrical and optical performance by indium incorporation

      DOI: 10.1088/1674-4926/35/9/093003

      • School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

      Funds:

      the Natural Science Foundations of Fujian Province 2009J05146

      the Natural Science Foundations of Fujian Province 2012J01269

      Project supported by the National Natural Science Foundation of China (No. 61006006) and the Natural Science Foundations of Fujian Province (Nos. 2009J05146, 2012J01269)

      the National Natural Science Foundation of China 61006006

      More Information
      • Corresponding author: Chen Jinhuo, Email:yeschen@fzu.edu.cn
      • Received Date: 2014-03-02
      • Revised Date: 2014-04-20
      • Published Date: 2014-09-01

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