J. Semicond. > 2015, Volume 36 > Issue 10 > 104005
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SEMICONDUCTOR DEVICES

Enhanced light trapping in periodically truncated cone silicon nanowire structure

Kai Qiu, Yuhua Zuo, Tianwei Zhou, Zhi Liu, Jun Zheng, Chuanbo Li and Buwen Cheng

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DOI: 10.1088/1674-4926/36/10/104005

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Abstract: Light trapping plays an important role in improving the conversion efficiency of thin-film solar cells.The good wideband light trapping is achieved using our periodically truncated cone Si nanowire (NW) structures, and their inherent mechanism is analyzed and simulated by FDTD solution software.Ordered cylinder Si (NW) structure with initial size of 80 nm and length of 200 nm is grown by pattern transfer and selective epitaxial growth.Truncated cone Si NW array is then obtained by thermal oxidation treatment.Its mean reflection in the range of 300-900 nm is lowered to be 5% using 140 nm long truncated cone Si NW structure, compared with that of 20% using cylinder counterparts.It indicates that periodically truncated Si cone structures trap the light efficiently to enhance the light harvesting in a wide spectral range and have the potential application in highly efficient NW solar cells.

Key words: silicon film solar cells, AAO template, nanowires, light trapping



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Fig. 1.  The fabrication process flow of NW growth process,including AAO template preparation,pattern transfer and Si NW growth. (a) Si substrate. (b) SiO$_{2}$ layer on Si substrate. (c) Metal Al film on SiO$_{2}$/Si substrate. (d) Formation of AAO template. (e) Formation of SiO$_{2}$ mask. (f) Si NW growth by selective epitaxial method. (g) Formation of cylinder Si NW. (h) Formation of truncated cone Si NW by thermal oxidation.

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Fig. 2.  The SEM images of the AAO template and NW,the surface feature shows (a) the orderly arrangement of the nanometer pore,(b) the patency of the nano hole and the size is uniform,(c) the diameter,and (d) height of the NW.

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Fig. 3.  Cross section feature of silicon nano-structure indicates the different diameter between the top and bottom,the top diameter is 25~nm,and the bottom diameter is 35 nm.

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Fig. 4.  Raman shift of truncated cone Si NW,cylinder Si NW and flat Si substrate.

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Fig. 5.  Measured reflectance spectra of truncated cone Si NW,cylinder Si NW and flat Si substrate.

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Fig. 6.  Simulations and experimental reflectance of (a) cylinder Si NW and (b) truncated cone Si NW.

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Fig. 7.  (Color online) The reflectance spectra of truncated cone Si NW with (a) different bottom diameters,(b) different top diameters,and (c) different heights.

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    Received: 30 April 2015 Revised: Online: Published: 01 October 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(10): 104005
      Kai Qiu, Yuhua Zuo, Tianwei Zhou, Zhi Liu, Jun Zheng, Chuanbo Li, Buwen Cheng. Enhanced light trapping in periodically truncated cone silicon nanowire structure[J]. Journal of Semiconductors, 2015, 36(10): 104005. doi: 10.1088/1674-4926/36/10/104005 ****K Qiu, Y H Zuo, T W Zhou, Z Liu, J Zheng, C B Li, B W Cheng. Enhanced light trapping in periodically truncated cone silicon nanowire structure[J]. J. Semicond., 2015, 36(10): 104005. doi: 10.1088/1674-4926/36/10/104005.
      Citation:
      Kai Qiu, Yuhua Zuo, Tianwei Zhou, Zhi Liu, Jun Zheng, Chuanbo Li, Buwen Cheng. Enhanced light trapping in periodically truncated cone silicon nanowire structure[J]. Journal of Semiconductors, 2015, 36(10): 104005. doi: 10.1088/1674-4926/36/10/104005 ****
      K Qiu, Y H Zuo, T W Zhou, Z Liu, J Zheng, C B Li, B W Cheng. Enhanced light trapping in periodically truncated cone silicon nanowire structure[J]. J. Semicond., 2015, 36(10): 104005. doi: 10.1088/1674-4926/36/10/104005.
      shu

      Enhanced light trapping in periodically truncated cone silicon nanowire structure

      DOI: 10.1088/1674-4926/36/10/104005

      • State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos.51072194, 61021003, 61036001, 61376057).

      • Received Date: 2015-04-30
      • Accepted Date: 2015-05-11
      • Published Date: 2015-01-25

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