Abstract: We report on irradiation induced single event upset (SEU) by high-energy protons and heavy ions. The experiments were performed at the Paul Scherer Institute, and heavy ions at the SEE irradiating Facility on the HI-13 Tandem Accelerator in China's Institute of Atomic Energy, Beijing and the Heavy Ion Research Facility in Lanzhou in the Institute of Modern Physics, Chinese Academy of Sciences. The results of proton and heavy ions induced (SEU) in 65 nm bulk silicon CMOS SRAMS are discussed and the prediction on several typical orbits are presented.

Key words: proton, heavy ions, SEU rates, Bendel model, 65 nm SRAM