Fig. 1.
Electrical Conductivity in zero field as a function of $T^{-1/4}$ on a semi logarithmic scale for three insulating,n-type CdSe. Experimental data are reproduced from Reference [15].
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| Citation: |
M Errai, A El Kaaouachi, H El Idrissi. Variable range hopping conduction in n-CdSe samples at very low temperature[J]. Journal of Semiconductors, 2015, 36(12): 122001. doi: 10.1088/1674-4926/36/12/122001
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M Errai, A E Kaaoouachi, H E Idrissi. Variable range hopping conduction in n-CdSe samples at very low temperature[J]. J. Semicond., 2015, 36(12): 122001. doi: 10.1088/1674-4926/36/12/122001.
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Variable range hopping conduction in n-CdSe samples at very low temperature
DOI: 10.1088/1674-4926/36/12/122001
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Abstract
We reanalyzed experimental data already published in Friedman J R, Zhang Y, Dai P, et al. Phys Rev B, 1996, 53(15):9528. Variable range hopping(VRH) conduction in the insulating three-dimensional n-CdSe samples has been studied over the entire temperature range from 0.03 to 1 K. In the absence of a magnetic field, the low temperature conductivity σ of the three samples(A, B and C) obeys the Mott VRH conduction with an appropriate temperature dependence in the prefactor(σ=σ0 exp[-(T0/T)p with p≈0.25). This behavior can be explained by a VRH model where the transport occurs by hopping between localized states in the vicinity of the Fermi level, EF, without creation of the Coulomb gap(CG). On the contrary, no Efros-Shklovskii VRH is observed, suggesting that the density is constant in the vicinity of the EF. -
References
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