Fig. 1.
10 $\times $ 10 $\mu $m$^{2}$ AFM images of the surface of 100 nm GaN film (samples A and B). The growth rates of samples are 1.6 and 0.8~$\mu $m/h respectively.
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| Citation: |
Junsong Cao, Xin Lü, Lubing Zhao, Shuang Qu, Wei Gao. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J]. Journal of Semiconductors, 2015, 36(2): 023005. doi: 10.1088/1674-4926/36/2/023005
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J S Cao, X Lü, L B Zhao, S Qu, W Gao. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J]. J. Semicond., 2015, 36(2): 023005. doi: 10.1088/1674-4926/36/2/023005.
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Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE
DOI: 10.1088/1674-4926/36/2/023005
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Abstract
The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode. -
References
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