Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect

Shoubhik Gupta; Bahniman Ghosh; Shiromani Balmukund Rahi

doi:10.1088/1674-4926/36/2/024001

J. Semicond. > 2015, Volume 36 > Issue 2 > 024001

SEMICONDUCTOR DEVICES

Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect

Shoubhik Gupta, Bahniman Ghosh and Shiromani Balmukund Rahi

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Corresponding author: Shoubhik Gupta, E-mail: guptashoubhik@gmail.com

DOI: 10.1088/1674-4926/36/2/024001

Abstract: We investigate the quantum-mechanical effects on the electrical properties of the double-gate junction-less field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.

Key words: quantum-mechanical effect, junction-less transistor, threshold voltage, oxide thickness

References

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Fig. 1. A junction-less transistor.

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Fig. 2. Schematic band diagrams for a symmetric DG-JLFET. (a) Fully depleted and downwardly bent channel in the sub threshold mode. Partially depleted and downwardly bent channel in the bulk current mode. (c) Flattened channel in the flat band mode. (d) Upwardly bent channel in the accumulation.

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Fig. 3. Plot showing QM effect on IV characteristics at different gate voltages.

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Fig. 4. Junction-less FET.

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Fig. 5. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 6. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 8 nm.

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Fig. 7. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 8. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 8 nm.

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Fig. 9. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 10. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 8 nm.

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Fig. 11. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 12. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 8 nm.

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Fig. 13. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 14. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 8 nm.

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Fig. 15. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 16. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 8 nm.

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Fig. 17. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 18. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 2 nm and $t_{\rm si}$ $=$ 8 nm.

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Fig. 19. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 4 nm.

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Fig. 20. $I_{\rm ds}$ versus $V_{\rm ds}$ for $t_{\rm ox}$ $=$ 4 nm and $t_{\rm si}$ $=$ 8 nm.

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Table 1. Dependence of change in threshold voltage to the silicon thickness.

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Received: 31 August 2014 Revised: Online: Published: 01 February 2015

We investigate the quantum-mechanical effects on the electrical properties of the double-gate junction-less field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.

Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect

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