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J. Semicond. > 2015, Volume 36 > Issue 3 > 034003

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SEMICONDUCTOR DEVICES

Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs

Kanjalochan Jena, Raghunandan Swain and T. R. Lenka

+ Author Affiliations

Corresponding author: T. R. Lenka, E-mail:

DOI: 10.1088/1674-4926/36/3/034003

Abstract: A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AlInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. AlN/GaN and AlInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/μm² with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.

Key words: 2DEG, GaN, MOSHEMT, quantum capacitance, TCAD

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Fig. 1. Proposed MOSHEMT structure.

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Fig. 2. Equivalent circuit diagrams for gate capacitance in AlN/GaN MOSHEMT.

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Fig. 3. Conduction band diagram in strong inversion.

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Fig. 4. Conduction energy band profile for a metal/oxide/AlN/GaN interface.

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Fig. 5. Plot showing gate capacitance versus barrier thickness for AlN/GaN MOSHEMT.

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Fig. 6. Plot showing gate capacitance versus gate voltage for different barrier thicknesses of AlN/GaN MOSHEMT.

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Fig. 7. Plot showing gate capacitance versus gate voltage for different barrier thicknesses of Al$_{0.83}$In$_{0.17}$N/GaN MOSHEMT.

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Fig. 8. Plot showing gate capacitance versus gate voltage for different barrier thicknesses of AlGaN/GaN MOSHEMT.

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Fig. 9. Plot showing gate capacitance versus barrier thickness.

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Table 1. List of model parameters.

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History

Received: 27 July 2014 Revised: Online: Published: 01 March 2015

Article Navigation > Journal of Semiconductors > 2015 > 36(3): 034003

Kanjalochan Jena, Raghunandan Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. Journal of Semiconductors, 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003 ****K Jena, Raghunandan Swain and A Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. J. Semicond., 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003.

Citation:

Kanjalochan Jena, Raghunandan Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. Journal of Semiconductors, 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003 ****

K Jena, Raghunandan Swain and A Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. J. Semicond., 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003.

Kanjalochan Jena, Raghunandan Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. Journal of Semiconductors, 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003 ****K Jena, Raghunandan Swain and A Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. J. Semicond., 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003.

Citation:

Kanjalochan Jena, Raghunandan Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. Journal of Semiconductors, 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003 ****

K Jena, Raghunandan Swain and A Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. J. Semicond., 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003.

Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs

DOI: 10.1088/1674-4926/36/3/034003

Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, 788010, India

More Information

Published Date: 2015-01-25

Abstract

A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AlInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. AlN/GaN and AlInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/μm² with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.
- 2DEG,
- GaN,
- MOSHEMT,
- quantum capacitance,
- TCAD

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]

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