J. Semicond. > 2015, Volume 36 > Issue 4 > 044005
|

SEMICONDUCTOR DEVICES

Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT

Qiang Fu1, 2, , Wanrong Zhang1, Dongyue Jin1, Yanxiao Zhao1 and Lianghao Zhang1

+ Author Affiliations

 Corresponding author: Qiang Fu, E-mail: duduffqq@sohu.com

DOI: 10.1088/1674-4926/36/4/044005

PDF

Abstract: BVCESfT rather than BVCEOfT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design. Instead of a single decrease in collector doping to improve BVCESfT and BVCEOfT, a novel optimization collector doping design is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT. As a result, the BVCESfT product is improved from 537.57 to 556.4 GHz·V, and the BVCEOfT product is improved from 309.51 to 326.35 GHz·V.

Key words: SiGe HBT, BVCES, BVCEO, fT, product



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
Fig. 1.  Cross-section of SiGe HBT used in SILVACO/ATHENA.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Doping profile of standard SiGe HBT used in SILVACO/ATHENA.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Comparison of $f_{\rm T}$ versus $J_{\rm C}$ for standard HBTs with different collector doping concentrations.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Comparison of electric field for standard HBTs with different collector doping concentrations.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  Comparison of ionization coefficient for standard HBTs with different collector doping concentrations.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Doping profile of HBTs used in SILVACO/ATHENA including the standard ($N_{\rm C}$ $=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  Comparison of electric field for HBTs with the standard ($N_{\rm C}$~$=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping concentration.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  Comparison of ionization coefficient for HBTs with the standard ($N_{\rm C}$ $=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping concentration.

DownLoad: Full-Size Img PowerPoint
Fig. 9.  Comparison of $f_{\rm T}$ versus $J_{\rm C}$ for HBTs with the standard ($N_{\rm C}$~$=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping concentration.

DownLoad: Full-Size Img PowerPoint
DownLoad: CSV
DownLoad: CSV

Table 1.   Parameters for standard HBTs with different collector doping concentrations.

DownLoad: CSV

Table 2.   Parameters for standard HBTs with the standard ($N_{\rm C}$ $=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping compared with Reference [1].

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2638 Times PDF downloads: 14 Times Cited by: 0 Times

    History

    Received: 10 October 2014 Revised: Online: Published: 01 April 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(4): 044005
      Qiang Fu, Wanrong Zhang, Dongyue Jin, Yanxiao Zhao, Lianghao Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. Journal of Semiconductors, 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005 ****Q Fu, W R Zhang, D Y Jin, Y X Zhao, L H Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. J. Semicond., 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005.
      Citation:
      Qiang Fu, Wanrong Zhang, Dongyue Jin, Yanxiao Zhao, Lianghao Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. Journal of Semiconductors, 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005 ****
      Q Fu, W R Zhang, D Y Jin, Y X Zhao, L H Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. J. Semicond., 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005.
      shu

      Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT

      DOI: 10.1088/1674-4926/36/4/044005
      • 1.

        College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

      • 2.

        College of Physics, Liaoning University, Shenyang 110036, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 60776051, 61006059, 61006044), the Beijing Natural Science Foundation (Nos. 4082007, 4143059, 4142007, 4122014), and the Beijing Municipal Education Committee (Nos. KM200710005015, KM200910005001).

      More Information
      • Corresponding author: E-mail: duduffqq@sohu.com
      • Received Date: 2014-10-10
      • Accepted Date: 2014-12-16
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return