J. Semicond. > 2015, Volume 36 > Issue 6 > 063002
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SEMICONDUCTOR MATERIALS

Crystallization kinetics of Sn40Se60 thin films for phase change memory applications

Joshua M. Kundu, Patrick M. Karimi and Walter K. Njoroge

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 Corresponding author: Joshua M. Kundu, Email: mrjkmasinde@gmail.com

DOI: 10.1088/1674-4926/36/6/063002

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Abstract: The crystallization kinetics of Sn40Se60 thin films has been successfully investigated using sheet resistance versus temperature measurements. Thermal evaporation was used to deposit the films on ordinary glass substrates. The crystallization temperature for Sn40Se60 thin film was found to be 156.6 ± 0.3 ℃. In the as-deposited state, the sheet resistance was found to be 195 MΩ, this value declined to 1560 Ω/口 upon annealing. The value of activation energy obtained from the Kissinger plot was 0.62 ± 0.07 eV. From the results obtained, Sn40Se60 is a promising alloy for PCM application because of its high electrical contrast, high crystallization temperature, and relatively high activation energy.

Key words: crystallization temperature, activation energy, electrical contrast, phase change memory



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Fig. 1.  Schematic diagram showing temperature versus time graphs for reset and set pulses during programming of a PCM cell.

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Fig. 2.  (a) Sheet resistance versus temperature for Sn$_{40}$Se$_{60}$ thin film heated at a rate of 5 K/min. (b) Sheet resistance versus temperature for Sn$_{40}$Se$_{60}$ thin films annealed at different heating rates showing positive shifts in steep decline in sheet resistance with increase in heating rates.

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Fig. 3.  The Kissinger plot for calculation of activation energy for the alloy Sn$_{40}$Se$_{60}$.

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    Received: 19 December 2014 Revised: Online: Published: 01 June 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(6): 063002
      Joshua M. Kundu, Patrick M. Karimi, Walter K. Njoroge. Crystallization kinetics of Sn40Se60 thin films for phase change memory applications[J]. Journal of Semiconductors, 2015, 36(6): 063002. doi: 10.1088/1674-4926/36/6/063002 ****J. M. Kundu, P. M. Karimi, W. K. Njoroge. Crystallization kinetics of Sn40Se60 thin films for phase change memory applications[J]. J. Semicond., 2015, 36(6): 063002. doi:  10.1088/1674-4926/36/6/063002.
      Citation:
      Joshua M. Kundu, Patrick M. Karimi, Walter K. Njoroge. Crystallization kinetics of Sn40Se60 thin films for phase change memory applications[J]. Journal of Semiconductors, 2015, 36(6): 063002. doi: 10.1088/1674-4926/36/6/063002 ****
      J. M. Kundu, P. M. Karimi, W. K. Njoroge. Crystallization kinetics of Sn40Se60 thin films for phase change memory applications[J]. J. Semicond., 2015, 36(6): 063002. doi:  10.1088/1674-4926/36/6/063002.
      shu

      Crystallization kinetics of Sn40Se60 thin films for phase change memory applications

      DOI: 10.1088/1674-4926/36/6/063002

      • Department of Physics, Kenyatta University, P O Box 43844-00100, Nairobi, Kenya

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      • Corresponding author: Email: mrjkmasinde@gmail.com
      • Received Date: 2014-12-19
      • Published Date: 2015-01-25

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