Fig. 1.
(a) XRD patterns of films on Si and SiC substrates. (b) XRD patterns of films under different Si target sputtering time. (c) Raman spectra of the samples under different Si target sputtering time.
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| Citation: |
Hong Li, Hongbin Pu, Chunlei Zheng, Zhiming Chen. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering[J]. Journal of Semiconductors, 2015, 36(6): 063005. doi: 10.1088/1674-4926/36/6/063005
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H Li, H B Pu, C L Zheng, Z M Chen. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering[J]. J. Semicond., 2015, 36(6): 063005. doi: 10.1088/1674-4926/36/6/063005.
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β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering
DOI: 10.1088/1674-4926/36/6/063005
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Abstract
β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 ℃ for 5 min and the optimal annealing temperature is 900 ℃. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 ℃ for 5 min. -
References
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