J. Semicond. > 2015, Volume 36 > Issue 6 > 064002
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SEMICONDUCTOR DEVICES

Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system

Suranjana Banerjee1 and Monojit Mitra2

+ Author Affiliations

 Corresponding author: Suranjana Banerjee, Email: aritra.acharyya@skf.edu.in

DOI: 10.1088/1674-4926/36/6/064002

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Abstract: Simulation studies are made on the large-signal RF performance and avalanche noise properties of heterojunction double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on AlxGa1-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, conversion efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.

Key words: AlGaN/GaN heterojuntion, DDR IMPATTs, avalanche noise, terahertz frequency



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Fig. 1.  1-D models of (a) n-GaN/p-GaN,(b) n-Al$_{x}$Ga$_{1-x}$N/p-GaN,(c) n-GaN/p-Al$_{x}$Ga$_{1-x}$N and (d) n-Al$_{x}$Ga$_{1-x}$N/p-Al$_{x}$Ga$_{1-x}$N structured DDR IMPATT diodes.

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Fig. 2.  Voltage driven IMPATT diode oscillator and associated circuit.

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Fig. 3.  Variations of (a) breakdown voltage,avalanche zone voltage drop and (b) avalanche zone width of different homojunction and heterojunction DDR IMPATTs with bias current density. Bar graphs in inset of Figure 3(a) show the percentage of drift zone voltage drop to breakdown voltage and in the inset of Figure 3(b) show the percentage of avalanche zone width to total depletion layer width for different bias current densities.

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Fig. 4.  Variation of RF power output of (a) n-GaN/p-GaN,(b) n-Al$_{x}$Ga$_{1-x}$N/p-GaN,(c) n-GaN/p-Al$_{x}$Ga$_{1-x}$N and (d) n-Al$_{x}$Ga$_{1-x}$N/p-Al$_{x}$Ga$_{1-x}$N structured DDR IMPATT diodes designed to operate at 1.00 THz with RF voltage for different bias current densities.

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Fig. 5.  Variation of DC to RF conversion efficiency of (a) n-GaN/p-GaN,(b) n-Al$_{x}$Ga$_{1-x}$N/p-GaN,(c) n-GaN/p-Al$_{x}$Ga$_{1-x}$N and (d) n-Al$_{x}$Ga$_{1-x}$N/p-Al$_{x}$Ga$_{1-x}$N structured DDR IMPATT diodes designed to operate at 1.00 THz with RF voltage for different bias current densities.

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Fig. 6.  Admittance characteristics of different homojunction and heterojunction DDR IMPATTs for the bias current density of 45 $\times$ 10$^{8}$ A/m$^{2}$ at 60 % voltage modulation.

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Fig. 7.  Variations of (a) RF power output and (b) DC to RF conversion efficiency of different homojunction and heterojunction DDR IMPATTs with bias current density for 60 % voltage modulation.

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Fig. 8.  Variations of (a) noise spectral density and (b) noise measure of different homojunction and heterojunction DDR IMPATTs with frequency for the bias current density of 40 $\times$ 10$^{8}$ A/m$^{2}$.

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Fig. 9.  Variations of noise measure of different homojunction and heterojunction DDR IMPATTs with bias current density.

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Table 1.   Design parameters.

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Table 2.   DC parameters.

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Table 3.   Large-signal parameters for 60 % voltage modulation.

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    Received: 22 November 2014 Revised: Online: Published: 01 June 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(6): 064002
      Suranjana Banerjee, Monojit Mitra. Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system[J]. Journal of Semiconductors, 2015, 36(6): 064002. doi: 10.1088/1674-4926/36/6/064002 ****S Banerjee, M Mitra. Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system[J]. J. Semicond., 2015, 36(6): 064002. doi: 10.1088/1674-4926/36/6/064002.
      Citation:
      Suranjana Banerjee, Monojit Mitra. Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system[J]. Journal of Semiconductors, 2015, 36(6): 064002. doi: 10.1088/1674-4926/36/6/064002 ****
      S Banerjee, M Mitra. Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system[J]. J. Semicond., 2015, 36(6): 064002. doi: 10.1088/1674-4926/36/6/064002.
      shu

      Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system

      DOI: 10.1088/1674-4926/36/6/064002
      • 1.

        Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly, West Bengal 712121, India

      • 2.

        Indian Institute of Engineering Science and Technology, Shibpur, Howrah, West Bengal 711113, India

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      • Corresponding author: Email: aritra.acharyya@skf.edu.in
      • Received Date: 2014-11-22
      • Accepted Date: 2014-12-27
      • Published Date: 2015-01-25

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