J. Semicond. > 2015, Volume 36 > Issue 7 > 073006
|

SEMICONDUCTOR MATERIALS

Chemical and electrical properties of (NH4)2S passivated GaSb surface

Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang, Kewei Cao, Zhiyuan Dong and Youwen Zhao

+ Author Affiliations

 Corresponding author: Dongyan Tao, E-mail: dongyantao@semi.ac.cn

DOI: 10.1088/1674-4926/36/7/073006

PDF

Abstract: The surface chemical properties of gallium antimonide (GaSb) after ammonium sulfide ((NH4)2S) solution passivation have been studied by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and I-V measurement. An advantage of neutral (NH4)2S + S solution over pure (NH4)2S solution and alkaline (NH4)2S + S solution has been found in the ability to passivate the GaSb surface by contrast and comparison. It has been found that alkaline (NH4)2S + S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure (NH4)2S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral (NH4)2S + S solution passivation worked much better in improving the surface properties of GaSb.

Key words: surface passivation, GaSb, XPS, TOF-SIMS



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
Fig. 1.  XPS (a) Ga 3d and (b) Sb 3d spectra and simulation results obtained from HCl-etched (sample (a)), pure (NH$_{4})$$_{2}$S solution passivation (sample (b)), alkaline (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (c)) and neutral (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (d)).

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Comparison of TOF-SIMS positive (-pos) and negative (-neg) mass spectrum obtained from (a) HCl-etched (sample (a)) and (b) pure (NH$_{4})$$_{2}$S solution passivation (sample (b)). The unmarked peak positions are caused by the isotope of Ga and/or Sb, which are not considered during the analysis.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Surface topography for HCl-etched (sample (a)), pure (NH$_{4})$$_{2}$S solution passivation (sample (b)), alkaline (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (c)) and neutral (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (d)).

DownLoad: Full-Size Img PowerPoint
Fig. 4.  $I$-$V$ characteristics of Au/n-GaSb Schottky contacts under forward and reverse bias.

DownLoad: Full-Size Img PowerPoint

Table 1.   The results of surface roughness recorded at three different locations on each sample.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2490 Times PDF downloads: 20 Times Cited by: 0 Times

    History

    Received: 28 September 2014 Revised: Online: Published: 01 July 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(7): 073006
      Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang, Kewei Cao, Zhiyuan Dong, Youwen Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. Journal of Semiconductors, 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006 ****D Y Tao, Y Cheng, J M Liu, J Su, T Liu, F Y Yang, F H Wang, K W Cao, Z Y Dong, Y W Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. J. Semicond., 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006.
      Citation:
      Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang, Kewei Cao, Zhiyuan Dong, Youwen Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. Journal of Semiconductors, 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006 ****
      D Y Tao, Y Cheng, J M Liu, J Su, T Liu, F Y Yang, F H Wang, K W Cao, Z Y Dong, Y W Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. J. Semicond., 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006.
      shu

      Chemical and electrical properties of (NH4)2S passivated GaSb surface

      DOI: 10.1088/1674-4926/36/7/073006

      • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61474104).

      More Information
      • Corresponding author: E-mail: dongyantao@semi.ac.cn
      • Received Date: 2014-09-28
      • Accepted Date: 2015-02-02
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return