J. Semicond. > 2016, Volume 37 > Issue 1 > 013002
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SEMICONDUCTOR MATERIALS

New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials

Xudong Qin, Yonghai Chen, Yu Liu, Laipan Zhu, Yuan Li, Qing Wu and Wei Huang

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 Corresponding author: Chen Yonghai,Email:yhchen@semi.ac.cn

DOI: 10.1088/1674-4926/37/1/013002

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Abstract: We employed the microscopic reflectance difference spectroscopy (micro-RDS) to determine the layer-number and microscopically image the surface topography of graphene and MoS2 samples. The contrast image shows the efficiency and reliability of this new clipping technique. As a low-cost, quantifiable, no-contact and non-destructive method, it is not concerned with the characteristic signal of certain materials and can be applied to arbitrary substrates. Therefore it is a perfect candidate for characterizing the thickness of graphene-like two-dimensional materials.

Key words: graphene, two-dimensional materials, microscopic reflectance difference spectroscopy, microscopic morphology, Raman spectra, surface topography



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Fig. 1.  (a) Optical image of the graphene sample prepared by the mechanical cleavage technique. The labels 1L, 2L, and 3L indicate the monolayer, bi-layer, and tri-layer areas, respectively. (b) Raman scanning results of integrated G band intensity in the same region. (c) The corresponding Raman spectrum of monolayer, bi-layer, and tri-layer graphene.

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Fig. 2.  (Color online) Experimental set-up for micro-RDS measurement. Arrows show the optical axis of the polarizer, analyzer and PEM and the polarizer rotated by 45 degree relates to the analyzer. The confocal arrangement and illumination parts are also illustrated in the graph.

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Fig. 3.  (Color online) (a) Micro-RDS DC scanning image of a graphene sample with a different number of layers. The labels 1L, 2L, and 3L indicate the layer number of graphene. (b) Three-dimensional side view of the sign reversal of (a) for a clear and intuitive view.

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Fig. 4.  Fit curve of the ratio of light intensity reflected by bare substrate to graphene.

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Fig. 5.  (Color online) Optical images of CVD graphene and MoS2 samples in (a), (c) and (e) and their micro-RDS images in (b), (d) and (f), respectively. The substrates of the graphene samples are copper foils. The label 2L in (f) indicate the layer number of MoS2 fitted by Equation (2).

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    Received: 15 May 2015 Revised: Online: Published: 01 January 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(1): 013002
      Xudong Qin, Yonghai Chen, Yu Liu, Laipan Zhu, Yuan Li, Qing Wu, Wei Huang. New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials[J]. Journal of Semiconductors, 2016, 37(1): 013002. doi: 10.1088/1674-4926/37/1/013002 ****X D Qin, Y H Chen, Y Liu, L P Zhu, Y Li, Q Wu, W Huang. New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials[J]. J. Semicond., 2016, 37(1): 013002. doi: 10.1088/1674-4926/37/1/013002.
      Citation:
      Xudong Qin, Yonghai Chen, Yu Liu, Laipan Zhu, Yuan Li, Qing Wu, Wei Huang. New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials[J]. Journal of Semiconductors, 2016, 37(1): 013002. doi: 10.1088/1674-4926/37/1/013002 ****
      X D Qin, Y H Chen, Y Liu, L P Zhu, Y Li, Q Wu, W Huang. New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials[J]. J. Semicond., 2016, 37(1): 013002. doi: 10.1088/1674-4926/37/1/013002.
      shu

      New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials

      DOI: 10.1088/1674-4926/37/1/013002

      • Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the State Key Development Program for Basic Research of China (Nos. 2012CB921304, 2013CB632805, 2012CB619306) and the National Natural Science Foundation of China (No. 61474114).

      More Information
      • Corresponding author: Chen Yonghai,Email:yhchen@semi.ac.cn
      • Received Date: 2015-05-15
      • Accepted Date: 2015-06-09
      • Published Date: 2016-01-25

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