J. Semicond. > 2016, Volume 37 > Issue 1 > 013004
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SEMICONDUCTOR MATERIALS

Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior

Ding Sun, Yang Ge, Li Zhang, Shengzhi Xu, Ze Chen, Ning Wang, Xuejiao Liang, Changchun Wei, Ying Zhao and Xiaodan Zhang

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 Corresponding author: Zhang Xiaodan,Email:xdzhang@nankai.edu.cn

DOI: 10.1088/1674-4926/37/1/013004

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Abstract: In order to study the influence of Cu-rich growth on the performance of the Cu2ZnSnSe4 (CZTSe) thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of CuxSey at the first period caused by the volatility of SnSex. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.

Key words: Cu2ZnSnSe4, co-evaporation, Cu excess growth, thin film solar cells



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Fig. 1.  Two types of deposition recipes: type-A maintains constant rates throughout, and type-B starts Cu-rich.

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Fig. 2.  XRD patterns of CZTSe films deposited at different substrate temperatures.

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Fig. 3.  Effect of substrate temperature on the morphologies of CZTSe films. (a) 340 ℃. (b) 380 ℃. (c) 420 ℃. (d) 460 ℃.

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Fig. 4.  Effect of reaction time on the compositions of CZTSe films deposited using one stage process.

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Fig. 5.  Effect of reaction time on the morphologies of CZTSe films. (a) 1 min. (b) 5 min. (c) 10 min. (d) 15 min.

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Fig. 6.  XRD patterns for films deposited using the two-stage process after the deposition of stage-1 and stage-2.

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Fig. 7.  SEM images of CZTSe films deposited using the two-stage process after deposition of (a) stage-1, (b) stage-2, and (c) one stage process.

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Fig. 8.  Expanded XRD patterns for films deposited using one-stage process and two-stage process.

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Fig. 9.  J –V curves of CZTSe solar cells deposited using different deposition processes. (a) One-stage process. (b) Two-stage process.

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    Received: 29 May 2015 Revised: Online: Published: 01 January 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(1): 013004
      Ding Sun, Yang Ge, Li Zhang, Shengzhi Xu, Ze Chen, Ning Wang, Xuejiao Liang, Changchun Wei, Ying Zhao, Xiaodan Zhang. Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior[J]. Journal of Semiconductors, 2016, 37(1): 013004. doi: 10.1088/1674-4926/37/1/013004 ****D Sun, Y Ge, L Zhang, S Z Xu, Z Chen, N Wang, X J Liang, C C Wei, Y Zhao, X D Zhang. Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior[J]. J. Semicond., 2016, 37(1): 013004. doi: 10.1088/1674-4926/37/1/013004.
      Citation:
      Ding Sun, Yang Ge, Li Zhang, Shengzhi Xu, Ze Chen, Ning Wang, Xuejiao Liang, Changchun Wei, Ying Zhao, Xiaodan Zhang. Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior[J]. Journal of Semiconductors, 2016, 37(1): 013004. doi: 10.1088/1674-4926/37/1/013004 ****
      D Sun, Y Ge, L Zhang, S Z Xu, Z Chen, N Wang, X J Liang, C C Wei, Y Zhao, X D Zhang. Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior[J]. J. Semicond., 2016, 37(1): 013004. doi: 10.1088/1674-4926/37/1/013004.
      shu

      Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior

      DOI: 10.1088/1674-4926/37/1/013004

      • Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China

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      • Corresponding author: Zhang Xiaodan,Email:xdzhang@nankai.edu.cn
      • Received Date: 2015-05-29
      • Accepted Date: 2015-07-03
      • Published Date: 2016-01-25

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