J. Semicond. > 2016, Volume 37 > Issue 1 > 014001
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SEMICONDUCTOR DEVICES

Ageing of GaN HEMT devices:which degradation indicators?

A. Divay1, O. Latry1, C. Duperrier2 and F. Temcamani3

+ Author Affiliations

 Corresponding author: O.Latry,Email:lolivierlol@gmail.com

DOI: 10.1088/1674-4926/37/1/014001

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Abstract: A following of diverse degradation indicators during the ageing in operational conditions of AlGaN/GaN HEMTs (high electron mobility transistors) is proposed. Measurements of pulsed I-V, Schottky barrier height, RF output power and gate current versus output power during the early phase of the ageing test (2000 h on a 6000 h total) are presented. These preliminary results give insight on some of the principal degradation indicators that are interesting to follow during an ageing test close to operational conditions on such components.

Key words: GaN, HEMT, ageing tests, reliability



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Fig. 1.  Diagram of the amplifiers on which the components are mounted. The switches permit the \textit{in-situ} measurements. The impedance adaptation and the RF filters are not represented.

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Fig. 2.  Lowering of the output power during the early phase of the ageing for one of the components (stress 2), time in logarithmic scale.

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Fig. 3.  Mean value of $I_{\rm gs}$ during the ageing. The noise is due to the precision of the ageing bench and the day/night cycle. Precise gate characterization is done with diode measurements.

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Fig. 4.  (Color online) Mean gate current versus input power ($I_{\rm dq}$ $=$ 200 mA, $V_{\rm ds}$ $=$ 50 V). The gate current increases sooner and higher with the ageing.

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Fig. 5.  (Color online) Reverse diode characteristic during the ageing test. Surprisingly, the reverse leakage current decreases.

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Fig. 6.  Forward Schottky characteristics during recovery measurements. The barrier height is increasing with a tendency to saturate at a higher value.

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Fig. 7.  (Color online) Variation of $g_{\rm m}$ during the ageing test with the quiescent bias ($V_{\rm gs0}$, $V_{\rm ds0})$ $=$ (--7 V, 0 V), stimulating traps close to the gate.

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Fig. 8.  (Color online) Variation of the maximum of $g_{\rm m}$ (taken at $V_{\rm gs}$ $=$ $-1$ V) during the ageing test with all quiescent biases. A detrapping effect is visible on the third quiescent bias with an odd point at $\approx $ 1000~h.

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Fig. 9.  (Color online) Measurement of a current transient for trapping effects analysis.

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Fig. 10.  Arrhenius plot of the three defects observed in traps measurement. Three activation energies are extracted: 0.45, 0.86 and 0.65~eV.

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    Received: 13 October 2015 Revised: Online: Published: 01 January 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(1): 014001
      A. Divay, O. Latry, C. Duperrier, F. Temcamani. Ageing of GaN HEMT devices:which degradation indicators?[J]. Journal of Semiconductors, 2016, 37(1): 014001. doi: 10.1088/1674-4926/37/1/014001 ****A. Divay, O. Latry, C. Duperrier, F. Temcamani. Ageing of GaN HEMT devices:which degradation indicators?[J]. J. Semicond., 2016, 37(1): 014001. doi: 10.1088/1674-4926/37/1/014001.
      Citation:
      A. Divay, O. Latry, C. Duperrier, F. Temcamani. Ageing of GaN HEMT devices:which degradation indicators?[J]. Journal of Semiconductors, 2016, 37(1): 014001. doi: 10.1088/1674-4926/37/1/014001 ****
      A. Divay, O. Latry, C. Duperrier, F. Temcamani. Ageing of GaN HEMT devices:which degradation indicators?[J]. J. Semicond., 2016, 37(1): 014001. doi: 10.1088/1674-4926/37/1/014001.
      shu

      Ageing of GaN HEMT devices:which degradation indicators?

      DOI: 10.1088/1674-4926/37/1/014001
      • 1.

        Groupe de Physique des Matériaux, Université et INSA de Rouen-UMR CNRS 6634-Normandie Université, Saint Etienne du Rouvray, France

      • 2.

        University of Cergy, ETIS UMR 8051 CNRS, ENSEA, 95000 Cergy-Pontoise, France

      • 3.

        ECS-Lab, ENSEA, 95000 Cergy-Pontoise, France

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      • Corresponding author: O.Latry,Email:lolivierlol@gmail.com
      • Received Date: 2015-10-13
      • Published Date: 2016-01-25

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