Fig. 1.
(Color online) Schematic cross section of AlGaN/GaN HEMTs with selective area grown (SAG) p-GaN gates.
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| Citation: |
Yuliang Huang, Lian Zhang, Zhe Cheng, Yun Zhang, Yujie Ai, Yongbing Zhao, Hongxi Lu, Junxi Wang, Jinmin Li. AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates[J]. Journal of Semiconductors, 2016, 37(11): 114002. doi: 10.1088/1674-4926/37/11/114002
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Y L Huang, L Zhang, Z Cheng, Y Zhang, Y J Ai, Y B Zhao, H X Lu, J X Wang, J M Li. AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates[J]. J. Semicond., 2016, 37(11): 114002. doi: 10.1088/1674-4926/37/11/114002.
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AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates
DOI: 10.1088/1674-4926/37/11/114002
More Information
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Abstract
We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (Vth) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the Vth raises from -67 V to -37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage.-
Keywords:
- AlGaN/GaN,
- selective area growth,
- normally off,
- HEMT
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References
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