Citation: |
Qifeng Zhao, Yiqi Zhuang, Junlin Bao, Wei Hu. Radiation-induced 1/f noise degradation of bipolar linear voltage regulator[J]. Journal of Semiconductors, 2016, 37(3): 034004. doi: 10.1088/1674-4926/37/3/034004
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Q F Zhao, Y Q Zhuang, J L Bao, W Hu. Radiation-induced 1/f noise degradation of bipolar linear voltage regulator[J]. J. Semicond., 2016, 37(3): 034004. doi: 10.1088/1674-4926/37/3/034004.
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Radiation-induced 1/f noise degradation of bipolar linear voltage regulator
DOI: 10.1088/1674-4926/37/3/034004
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Abstract
Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117. -
References
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