Fig. 1.
(Color online) (a) Contour plot of simulated amplitude reflection versus slot width $d_{\rm s}$ and spacing $d_{\rm w}$ with the slot depth of 200 nm. (b) Relative loss versus slot width (duty cycle ff).
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| Citation: |
Mengke Li, Lijun Yuan, Hongyan Yu, Qiang Kan, Shiyan Li, Junping Mi, Jiaoqing Pan. Design and fabrication of 1.55μm broad area slotted single-mode Fabry-Perot lasers[J]. Journal of Semiconductors, 2016, 37(3): 034007. doi: 10.1088/1674-4926/37/3/034007
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M K Li, L J Yuan, H Y Yu, Q Kan, S Y Li, J P Mi, J Q Pan. Design and fabrication of 1.55μm broad area slotted single-mode Fabry-Perot lasers[J]. J. Semicond., 2016, 37(3): 034007. doi: 10.1088/1674-4926/37/3/034007.
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Design and fabrication of 1.55μm broad area slotted single-mode Fabry-Perot lasers
DOI: 10.1088/1674-4926/37/3/034007
More Information
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Abstract
We present a single-mode laser on a p-InP substrate suitable for bonding on silicon-on-insulator(SOI) wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma(ICP) etching technique without any regrowth steps. The parameters were designed using the simulation tool "cavity modeling framework"(CAMFR). The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10℃ in continuous-wave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.-
Keywords:
- single mode laser,
- 1.55μm,
- CAMFR,
- perturbing slots
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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