J. Semicond. > 2016, Volume 37 > Issue 3 > 038001

CORRIGENDUM

Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)

Jinshun Bi and Zhengsheng Han

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DOI: 10.1088/1674-4926/37/3/038001

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    Received: Revised: Online: Published: 01 March 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(3): 038001
      Jinshun Bi, Zhengsheng Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. Journal of Semiconductors, 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001 ****J S Bi, Z S Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. J. Semicond., 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001.
      Citation:
      Jinshun Bi, Zhengsheng Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. Journal of Semiconductors, 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001 ****
      J S Bi, Z S Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. J. Semicond., 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001.
      shu

      Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)

      DOI: 10.1088/1674-4926/37/3/038001

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Published Date: 2016-01-25

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