J. Semicond. > 2016, Volume 37 > Issue 4 > 044005
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SEMICONDUCTOR DEVICES

High current gain 4H-SiC bipolar junction transistor

Yourun Zhang1, 3, , Jinfei Shi1, 3, Ying Liu2, 3, Chengchun Sun1, 3, Fei Guo1, 3 and Bo Zhang1, 3

+ Author Affiliations
DOI: 10.1088/1674-4926/37/4/044005

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Abstract: A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of SiC BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 μm, as well as an oxide layer thickness of 50 nm.

Key words: 4H-SiC, bipolar junction transistors (BJTs), current gain, electron trap



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图1.  Cross-sectional view of the novel 4H-SiC NPN BJT.

Fig.1


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图2.  Current gain and base current versus collector current for novel and conventional 4H-SiC BJT with the bias condition VBE=4 V and VCE= 8 V.

Fig.2


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图3.  (Color online) (a) Potential along the cut line AA’ near the SiC/ SiO2 surface under bias conditions of VBE=4 V and VCE =8V. The zero point in coordinates is at the edge of the emitter mesa. (b) Energy band schematic diagram for the extrinsic base of x= 3m along the cut line BB’. Figure

Fig.3


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图4.  (a) Acceptor trap ionized density along the cut line AA’, (b) the carrier density distribution and (c) the recombination rate near the SiC/SiO2 surface versus the distance from the emitter mesa x(m).

Fig.4


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图5.  (a) Maximum current gain versus the oxide layer thickness tox with the trap density of 2.8×1011 cm-2.eV-1 and (b) the overlapped metal length L with different interface trap densities under the base current bias of 1.5 mA/mm.

Fig.5


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    Received: 03 August 2015 Revised: Online: Published: 01 April 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(4): 044005
      Yourun Zhang, Jinfei Shi, Ying Liu, Chengchun Sun, Fei Guo, Bo Zhang. High current gain 4H-SiC bipolar junction transistor[J]. Journal of Semiconductors, 2016, 37(4): 044005. doi: 10.1088/1674-4926/37/4/044005 ****Y R Zhang, J F Shi, Y Liu, C C Sun, F Guo, B Zhang. High current gain 4H-SiC bipolar junction transistor[J]. J. Semicond., 2016, 37(4): 044005. doi: 10.1088/1674-4926/37/4/044005.
      Citation:
      Yourun Zhang, Jinfei Shi, Ying Liu, Chengchun Sun, Fei Guo, Bo Zhang. High current gain 4H-SiC bipolar junction transistor[J]. Journal of Semiconductors, 2016, 37(4): 044005. doi: 10.1088/1674-4926/37/4/044005 ****
      Y R Zhang, J F Shi, Y Liu, C C Sun, F Guo, B Zhang. High current gain 4H-SiC bipolar junction transistor[J]. J. Semicond., 2016, 37(4): 044005. doi: 10.1088/1674-4926/37/4/044005.
      shu

      High current gain 4H-SiC bipolar junction transistor

      DOI: 10.1088/1674-4926/37/4/044005
      • 1.

        State Key Laboratory of Electronic Thin Film and Integrated Device, Chengdu 610054, China

      • 2.

        School of Energy Science and Engineering, Chengdu 610054, China

      • 3.

        University of Electronic Science and Technology of China, Chengdu 610054, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 61306093, 61401075).

      • Received Date: 2015-08-03
      • Accepted Date: 2015-10-12
      • Published Date: 2016-01-25

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