Fig. 1.
Device structure of the fabricated 4H-SiC PiN diode.
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| Citation: |
Jiangmei Feng, Huajun Shen, Xiaohua Ma, Yun Bai, Jia Wu, Chengzhan Li, Kean Liu, Xinyu Liu. Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer[J]. Journal of Semiconductors, 2016, 37(4): 044009. doi: 10.1088/1674-4926/37/4/044009
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J M Feng, H J Shen, X H Ma, Y Bai, J Wu, C Z Li, K A Liu, X Y Liu. Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer[J]. J. Semicond., 2016, 37(4): 044009. doi: 10.1088/1674-4926/37/4/044009.
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Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer
DOI: 10.1088/1674-4926/37/4/044009
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Abstract
The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbon-implanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩ·cm2 at 100 A/cm2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the SiC crystalline grids was studied by using deep-level transient spectroscopy (DLTS). The DLTS spectra revealed that the Z1/2 traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z1/2 traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.-
Keywords:
- 4H-SiC,
- carbon-implanted drift layer,
- PiN diodes,
- Z1/2 defects
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References
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