J. Semicond. > 2016, Volume 37 > Issue 5 > 051001

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Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

Congxin Xia1 and Jingbo Li2,

+ Author Affiliations

 Corresponding author: Jingbo Li, jbli@semi.ac.cn

DOI: 10.1088/1674-4926/37/5/051001

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Abstract: Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

Key words: 2D metal chalcogenides, semiconductor, optoelectronic applications



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Fig. 1.  (Color online) MoS2 micro-rings and a diagram of the whole synthesis procedure[56] .

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Fig. 2.  (Color online) An optical image taken from a monolayer WS2/MoS2 heterostructure[57] .

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Fig. 3.  Band structure of monolayer MoS2 ,MoSe2 ,and WS2 calculated by PBE[60] .

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Fig. 4.  (Color online) The Calculated band alignment for MX2 monolayers. Solid lines are obtained by PBE,and dashed lines are obtained by HSE06. The dotted lines indicate the water reduction (H+ /H2) and oxidation (H2O/O2) potentials. The vacuum level is taken as zero reference[58] .

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Fig. 5.  (Color online) Band edge positions of MX2 as a function of the number of layers calculated by PBE. The vacuum level is taken as zero reference. The dashed lines indicate the water redox potentials[58] .

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Fig. 6.  (Color online) Side view (upper panel) and top (lower panel) view of the high-symmetry stacking orders of (a) AA,(b) AA1,(c) AA2,(d) AB,and (e) AB1 SnX2 bilayers (X $=$ S and Se). Yellow balls are for X atom and gray balls are for Sn atoms.

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Fig. 7.  The energy band structures of the stacking SnS2 patterns (a) AA,(b) AA1,(c) AA2,(d) AB,and (e) AB1 bilayers[61] .

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Fig. 8.  (Color online) The imaginary part $\varepsilon_{2} (\omega )$ (left) and real part $\varepsilon_{1} (\omega )$ (right) of the dielectric function in the stacking SnS2 patterns (a) AA,(b) AA$_1$,(c) AA$_2$,(d) AB,and (e) AB$_1$ bilayers[61] .

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Fig. 9.  (Color online) MoS2 monolayer-based transistor[63] .

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    Received: 04 April 2016 Revised: Online: Published: 01 May 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(5): 051001
      Congxin Xia, Jingbo Li. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides[J]. Journal of Semiconductors, 2016, 37(5): 051001. doi: 10.1088/1674-4926/37/5/051001 ****C X Xia, J B Li. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides[J]. J. Semicond., 2016, 37(5): 051001. doi: 10.1088/1674-4926/37/5/051001.
      Citation:
      Congxin Xia, Jingbo Li. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides[J]. Journal of Semiconductors, 2016, 37(5): 051001. doi: 10.1088/1674-4926/37/5/051001 ****
      C X Xia, J B Li. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides[J]. J. Semicond., 2016, 37(5): 051001. doi: 10.1088/1674-4926/37/5/051001.
      shu

      Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

      DOI: 10.1088/1674-4926/37/5/051001
      • 1.

        Department of Physics, Henan Normal University, Xinxiang 453007, China

      • 2.

        Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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      • Corresponding author: jbli@semi.ac.cn
      • Received Date: 2016-04-04
      • Published Date: 2016-01-25

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