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Cross-section of traditional BCD technology based on PN junction isolation structure.
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Kui Ma, Xinghua Fu, Jiexin Lin, Fashun Yang. Advanced BCD technology with vertical DMOS based on a semi-insulation structure[J]. Journal of Semiconductors, 2016, 37(7): 074004. doi: 10.1088/1674-4926/37/7/074004
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K Ma, X H Fu, J X Lin, F S Yang. Advanced BCD technology with vertical DMOS based on a semi-insulation structure[J]. J. Semicond., 2016, 37(7): 074004. doi: 10.1088/1674-4926/37/7/074004.
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Advanced BCD technology with vertical DMOS based on a semi-insulation structure
DOI: 10.1088/1674-4926/37/7/074004
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Abstract
A new semi-insulation structure in which one isolated island is connected to the substrate was proposed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical device without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabricated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated. -
References
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