Fig. 1.
Schematic device cross-sectional view of a 4H-SiC PiN diode.
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| Citation: |
Runhua Huang, Yonghong Tao, Ling Wang, Gang Chen, Song Bai, Rui Li, Zhifei Zhao. Development of 17 kV 4H-SiC PiN diode[J]. Journal of Semiconductors, 2016, 37(8): 084001. doi: 10.1088/1674-4926/37/8/084001
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R H Huang, Y H Tao, L Wang, G Chen, S Bai, R Li, Z F Zhao. Development of 17 kV 4H-SiC PiN diode[J]. J. Semicond., 2016, 37(8): 084001. doi: 10.1088/1674-4926/37/8/084001.
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Abstract
The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175μm with a doping of 2×1014cm-3. With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.-
Keywords:
- 4H-SiC,
- power device,
- termination,
- JTE
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References
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