Fig. 1.
(a) SemiSJ-CSTBT. (b) CSTBT.
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| Citation: |
Yan Jia, Hong Chen, Ji Tan, Shuojin Lu, Yangjun Zhu. A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate[J]. Journal of Semiconductors, 2016, 37(8): 084003. doi: 10.1088/1674-4926/37/8/084003
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Y Jia, H Chen, J Tan, S J Lu, Y J Zhu. A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate[J]. J. Semicond., 2016, 37(8): 084003. doi: 10.1088/1674-4926/37/8/084003.
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A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate
DOI: 10.1088/1674-4926/37/8/084003
More Information
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Abstract
A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed SemiSJ-CSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the SemiSJ-CSTBT exhibits an increase in breakdown voltage by 160 V (13%) and a reduction of turn-off switching loss by approximately 15%.-
Keywords:
- CSTBT,
- high breakdown voltage,
- p-pillar,
- SemiSJ-CSTBT,
- turn-off switching loss
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References
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