Citation: |
Kenyu Osada, Hiroyasu Katsuno, Toshiharu Irisawa, Yukio Saito. Scaling relation of domain competition on (2+1)-dimensional ballistic deposition model with surface diffusion[J]. Journal of Semiconductors, 2016, 37(9): 092001. doi: 10.1088/1674-4926/37/9/092001
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K. Osada, H Katsuno, T Irisawa, Y Saito. Scaling relation of domain competition on (2+1)-dimensional ballistic deposition model with surface diffusion[J]. J. Semicond., 2016, 37(9): 092001. doi: 10.1088/1674-4926/37/9/092001.
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Scaling relation of domain competition on (2+1)-dimensional ballistic deposition model with surface diffusion
DOI: 10.1088/1674-4926/37/9/092001
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Abstract
During heteroepitaxial overlayer growth multiple crystal domains nucleated on a substrate surface compete with each other in such a manner that a domain covered by neighboring ones stops growing. The number density of active domains ρ decreases as the height h increases. A simple scaling argument leads to a scaling law of ρ~h-γ with a coarsening exponent γ=d/z, where d is the dimension of the substrate surface and z the dynamic exponent of a growth front. This scaling relation is confirmed by performing kinetic Monte Carlo simulations of the ballistic deposition model on a two-dimensional (d=2) surface, even when an isolated deposited particle diffuses on a crystal surface. -
References
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