Processing math: 100%
J. Semicond. > 2017, Volume 38 > Issue 1 > 014005

SPECIAL TOPIC ON PEROVSKITE SOLAR CELLS

Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite

Tianyue Wang1, Jiewei Chen1, Gaoxiang Wu1, Dandan Song1 and Meicheng Li1, 2,

+ Author Affiliations

 Corresponding author: Meicheng Li,Email:mcli@ncepu.edu.cn

DOI: 10.1088/1674-4926/38/1/014005

PDF

Abstract: Heterojunction and sandwich architectures are two new-type structures with great potential for solar cells. Specifically, the heterojunction structure possesses the advantages of efficient charge separation but suffers from band offset and large interface recombination; the sandwich configuration is favorable for transferring carriers but requires complex fabrication process. Here, we have designed two thin-film polycrystalline solar cells with novel structures:sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells, respectively. A reliable simulation software wxAMPS is used to investigate their inherent characteristics with variation of the thickness and doping density of absorber layer. The results reveal that sandwich CIGS solar cell is able to exhibit an optimized efficiency of 20.7%, which is much higher than the standard heterojunction CIGS structure (18.48%). The heterojunction perovskite solar cell can be more efficient employing thick and doped perovskite films (16.9%) than these typically utilizing thin and weak-doping/intrinsic perovskite films (9.6%). This concept of structure modulation proves to be useful and can be applicable for other solar cells.

Key words: sandwich CIGS solar cellheterojunction perovskite solar cellsimulationwxAMPS

In solar cells, heterojunction and sandwich architectures are two kinds of promising structure configurations that have been widely applied for designing efficient devices [1-3]. Specifically, the heterojunction structure is fabricated by stacking up two different semiconductor materials together with different doping to control the conduction type, i.e. the n-type and p-type. Therefore, the typical heterojunction device demonstrates the p-n characteristic, and the built-in electric field formed at the two materials' interface contact is beneficial for charge separation. As for sandwich structure, it is usually composed of multiple solid material layers such as light absorption layer, electron transporting material (ETM) and hole transporting material (HTM), or by configuration of combination of solid layer and liquid electrolyte, which is considered effective for charge transport [4-6].

Although these two solar cell structures possess their own advantages for good performance, there still remain challenges in practical working. As a successful example of heterojunction architecture, copper indium gallium selenide(CIGS)-based solar cells offer inherent advantages of efficient carrier separation and collection, and even yield comparable efficiency to Si wafer-based cells [7]. Nevertheless, the interface of the CIGS heterojunction device could also bring about several problems. First, lots of defect states will be introduced into the heterojunction interface, which shall arouse great trap recombination. Second, since there exist band offsets at the CIGS/CdS interface, barrier spikes could possibly form at both the conduction band and valence band site, which will greatly reduce the collection efficiency of the free carriers and lead to relatively low open voltage [8, 9]. As a typical representative of the sandwich architecture, perovskite solar cells, with mixed organic-inorganic halide perovskites (MAPbX3, MA = CH3NH3, X = I, Cl, Br) as absorbers, inorganic metal oxides (TiO2, ZnO, Al2O3, etc.) as the ETMs and organic molecules (Spiro-OMeTAD, etc.) as the HTMs, also offer tempting prospects on energy conversion efficiency from less than 5% to over 20% since 2009 [10, 11]. But the utilization of the HTM will greatly increase the total cost due to the complex device fabrication process and the difficulty in HTM synthesis. Additionally, the light-induced degradation of the HTM could be a threat to the device stability [12]. To overcome these shortcomings, designing CIGS and perovskite devices with novel structures may be an effective way to enhance the stability and acquire better solar cell performance.

Here, we have designed two novel devices of sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells respectively. The similar property of the polycrystalline characteristic and large absorption coefficient of CIGS and perovskite materials makes it possible for their architecture reference. The key features of the modulated devices were analyzed by a one-dimensional simulator wxAMPS, which is a new version of the AMPS-1D that is well adapted to modeling various homo-junction, heterojunction, multi-junction solar cells [13-15]. By further varying of the thickness and doping density of absorber layer, we explored their effects on the sandwich CIGS and heterojunction perovskite solar cells' performances.

In the wxAMPS simulation, the standard heterojunction CIGS solar cell was in configuration of ZnO/CdS/CIGS, where CIGS is utilized as the p-type absorber layer and ZnO/CdS as the n-type layers, as shown in Fig. 1(b). The standard sandwich perovskite solar cell was in configuration of TiO2/MAPbI3/Spiro-OMeTAD, as shown in Fig. 1(a). The modulated novel sandwich CIGS and heterojunction perovskite devices were depicted in Figs. 1(d) and 1(c), which are referring to the structures of sandwich perovskite solar cell (Fig. 1(a)) and heterojunction CIGS solar cell (Fig. 1(b)), respectively. Tables 1 and 2 summarize the input modeling parameters for the standard heterojunction CIGS and sandwich perovskite devices, respectively, most of which were selected from recent reported experimental works. For sandwich CIGS and heterojunction perovskite devices, it simply replaced the absorber of the sandwich perovskite device with the CIGS layer and the absorber of the heterojunction CIGS with perovskite device. In our simulation, the AM1.5 solar radiation spectrum was adopted as the light source. Surface recombination rates of both the front and the back were set to 1 × 107 cm/s. Energy levels of defects in the simulated thin film materials were located at the center of their bandgap with the Gaussian-type energetic distribution (characteristic energy 0.1 eV). The absorption coefficients of the CIGS and perovskite layer were derived from Refs. [16, 17], respectively.

Figure  1.  (Color online) Schematic device structures.
Table  1.  wxAMPS parameters set for the standard perovskite solar cell.
Parameter and unit Compact TiO2 CH3NH3PbI3 Spiro-OMeTAD hline
εr 100 [18] 30 [19] 3 [20]
Eg (eV) 3.2 1.55 [21] 3.17 [20]
χ (eV) 4 3.9 [22] 2.05 [20]
Thickness (μm) 0.03 0.35 0.15
Na (cm-3) 0 0 3 × 1018
Nd (cm-3) 5 × 1019 [18] 0 0
Nc (cm-3) 1 × 1021 2.5 × 1020 [23] 2.8 × 1019 [24]
Nv (cm-3) 1 × 1021 2.5 × 1020 [22] 1 × 1019 [24]
DownLoad: CSV  | Show Table
Table  2.  wxAMPS parameters set for the standard CIGS solar cell [25].
Parameter and unit ZnO CdS CIGS
εr 9 10 13.6
Eg (eV) 3.3 2.4 1.15
χ (eV) 4.4 4.2 4.5
Thickness (μm) 0.2 0.05 3
Na (cm-3) 0 0 2 × 1016
Nd (cm-3) 1 × 1018 1.1 × 1018 0
Nc (cm-3) 2.2 × 1018 2.2 × 1018 2.2 × 1018
Nv (cm-3) 1.8 × 1019 1.8 × 1019 1 × 1019
DownLoad: CSV  | Show Table

Table 3 summarizes the modeling performance parameters of the standard/preliminary modulated CIGS and perovskite solar cells. The preliminary modulated solar cell means the active layer in the modulated structure exhibits the same property as in the original standard structure. For both the standard and sandwich CIGS solar cells, the CIGS layer is set to be 3 μm thick, with doping density equal to 1 × 1016 cm-3; and for both the standard and heterojunction perovskite solar cell, the perovskite layer is set to be 0.35 μm thick, with doping density equal to 1 × 1014 cm-3 (intrinsic). However, in terms of the performance values such as the Voc, Jsc, FF and PCE values of preliminary modulated devices, they are inferior to the standard devices. Here, we adjusted the thickness and doping density of the active layer of the modulated solar cells to explore their effects on the device characteristics.

Table  3.  Device performances of standard/ preliminary modulated CIGS and perovskite solar cells.
Solar cellsActive layer propertyJSC (mA cm-2) VOC(V)FF(%)PCE (%)
CIGSHeterojunction3 μm, doping (1 × 1016)37.420.6379.0218.48
Sandwich3 μm, doping (1 × 1016)34.34 0.6265.7414.09
PerovskiteSandwich0.35 μm, doping (1 × 1014)24.08 1.08 76.1319.71
Heterojunction0.35 μm, doping (1 × 1014)18.24 0.7173.79 9.6
DownLoad: CSV  | Show Table

When decreasing the thickness of the CIGS layer in the sandwiched one from 3 to 0.35 μm, yet the doping concentration fixed to 1 × 1016 cm-3, there is little change of Jsc but Voc is greatly increased (Fig. 2(a)). The value of the efficiency also gets enhanced as a result of the decreased CIGS thickness. Based on this, the doping effect of the absorber layer is further explored with the thickness fixed to 0.35 μm. It can be seen in Fig. 2(b) that when decreasing the doping density of CIGS layer from 1 × 1016 cm-3 to 1 × 1014 cm-3, the device performance improves a lot, especially in the FF and Voc value. An optimized sandwich CIGS device with efficiency of 20.7% is obtained. The reasons for these variations can be explained as follows. Instead of improving the photoelectric property, the addition of p-type HTM even promotes a negative effect on the sandwiched one. This is because the CIGS/HTM interface can provide a weak electric field which is beneficial for hole transporting but also a heterojunction contact which would intensify recombination. Since the span of the interface electric field is much shorter than the width of CIGS layer (3 μm) and there are few carriers generating in the CIGS layer adjacent to CIGS/HTM interface, the electric field originally exploited to separate photo-induced carriers is weak for lack of enough carriers, hence the recombination effect takes the lead. When decreasing the thickness of the CIGS layer in the sandwiched one, although Jsc reduces as a result of less light absorption, the built-in electric field could cross the whole active layer and the recombination rate is greatly reduced. Note that Voc depends mainly on the built-in electric field, depletion width and recombination rate, therefore, sandwiched ultra-thin CIGS film leads to rather high Voc and PCE. As doping density decreases, the original n-p-p+ junction gradually turns into n-i-p junction, and CIGS absorption material acts as an i layer. In the i layer, trap-assisted recombination centers are reduced significantly and minority carrier lifetime and diffusion length are longer than in the doped layer, which suppresses the recombination of photon-generated carriers in the CIGS layer. Hence, it is revealed that the sandwich CIGS with thin/intrinsic absorber demonstrates reduced recombination rate (Fig. 2(d)) and broader span of the built-in electric field (Fig. 2(c)) than in standard structure with thick/doped absorber.

Figure  2.  (Color online) (a) J-V curves of standard/modulated CIGS devices with varied thickness of the absorber layer. The doping is fixed to 1 × 1016 cm-3. (b) J-V curves of standard/modulated CIGS devices with varied doping density of the absorber layer. The thickness in sandwich structures is fixed to 0.35 μm. (c) Electric field, and (d) recombination rate of standard/optimized CIGS devices.

When increasing the thickness of the perovskite layer in heterojunction structure from 0.35 μm to 3 μm, yet the doping concentration fixed to 1 × 1014 cm-3, both the Jsc and Voc are increased, thus the device efficiency is enhanced accordingly (Fig. 3(b)). This can be ascribed to the more captured sunlight as a result of the thicker absorber thickness. However, the Voc of the heterojunction perovskite device is inferior than in the sandwich structure, which is related to the Fermi levels of the respective layers. In the sandwich device, Voc depends on the difference between the Efn of ETM and the Efp of HTM; in the heterojunction device, Voc depends on the difference between the Efn of ETM and the Efp of perovskite, the smaller difference of the latter leads to low Voc, which is negative for high-efficiency solar cell (Fig. 3(a)). Consequently, to promote the performance of heterojunction structure as much as possible, improving the Voc is of great importance. Here we fix the absorber thickness as 3 μm and further explore the effect of the doping density. As Fig. 3(c) shows, when the doping is less than 1 × 1016 cm-3, there is no evident change of the Voc value, but with the doping density increasing from 1 × 1016 to 1 × 1017 cm-3, the Voc as well as the efficiency gets significantly enhanced. This can be ascribed to the much more efficient charge separation effect induced by the intensified built-in electric field through heavy doping. As Fig. 3(d) shows, when increasing the doping from 1 × 1016 to 1 × 1017 cm-3, the built-in electric field is greatly intensified and even stronger than in the standard sandwich perovskite solar cell, which will enhance the efficiency of the device.

Figure  3.  (Color online) (a) The energy band of the respective layers in perovskite solar cells. (b) J-V curves of standard/modulated perovskite devices with varied thickness of the absorber layer. The doping is fixed to 1 × 1014 cm-3. (c) J-V curves of standard/modulated perovskite devices with varied doping density of the absorber layer. The thickness in heterojunction structure is fixed to 3 μm. (d) Recombination rate distribution in standard/modulated perovskite solar cells.

Therefore, for the sandwich CIGS solar cell, the thin/intrinsic CIGS film is more favorable for charge transfer and will lead to better device performance; and for the heterojunction perovskite solar cell, a relatively thick and heavily doped perovskite layer will benefit in promoting its photoelectric property. But since it is hard to fabricate intrinsic CIGS film and there is an interface contact problem in sandwich CIGS, and the thick/doped heterojunction perovskite device could introduce defects induced by pin-holes, it is still a challenge to fabricate the CIGS and perovskite solar cells with novel structures and many works remain to be done to promote their practical application.

In this paper, we designed two thin-film polycrystalline solar cells with novel structures: sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells, respectively. The characteristics of the devices were investigated by wxAMPS simulation platform with variation of the thickness and doping density of the absorber layers. It is revealed that the sandwich CIGS solar cell with intrinsic/thin CIGS film could lead to better device performance since there is less interface recombination and more efficient charge transfer. The optimized efficiency of sandwich CIGS is 20.7%, much higher than the standard heterojunction CIGS structure (18.48%). The heterojunction perovskite solar cells can be more efficient at employing thick/doped perovskite absorber (16.9%) than these typically utilizing thin and weak-doping/intrinsic perovskite films (9.6%) as a result of the intensified built-in electric field. This structure modulation proves to be useful and can be further applied for other solar cells' design to acquire better performance.



[1]
Sandberg O J, Sundqvist A, Nyman M, et al. Relating charge transport, contact properties, and recombination to open-circuit voltage in sandwich-type thin-film solar cells. Phys Rev Appl, 2016, 5(4): 044005 doi: 10.1103/PhysRevApplied.5.044005
[2]
Yang Y, Chen W, Dou L T, et al. High-performance multiple-donor bulk heterojunction solar cells. Nat Photonics, 2015, 9(3): 190 doi: 10.1038/nphoton.2015.9
[3]
Wu Y M, Yang R X, Tian H M, et al. Photoelectric characteristics of CH3NH3PbI3/p-Si heterojunction. J Semicond, 2016, 37(5): 053002 doi: 10.1088/1674-4926/37/5/053002
[4]
Jin H H, Han H J, Lee M H, et al. Stable semi-transparent CH3NH3PbI3 planar sandwich solar cells. Energy Environ Sci, 2015, 8(10): 2922 doi: 10.1039/C5EE01050K
[5]
Wu W Q, Lei BX, Rao H S, et al. Hydrothermal fabrication of hierarchically anatase TiO2 nanowire arrays on FTO glass for dye-sensitized solar cells. Sci Rep, 2013, 3(2): 1352 https://www.researchgate.net/publication/235740345_Hydrothermal_Fabrication_of_Hierarchically_Anatase_TiO2_Nanowire_arrays_on_FTO_Glass_for_Dye-sensitized_Solar_Cells
[6]
Sim H, Lee J, Cho S, et al. A study on the band structure of ZnO/CdS heterojunction for CIGS solar-cell application. J Semicond Technol Sci, 2015, 15(2): 267 doi: 10.5573/JSTS.2015.15.2.267
[7]
Contreras M A, Nakada T, Hongo M, et al. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2 Mo solar cell with 18.6% efficiency. Proceedings of World Conference on Photovoltaic Energy Conversion, 2003
[8]
Goetzberger A, Knobloch J, Voβ B, et al. The physics of solar cells. Imperial College Press, 2003: 384 http://cn.bing.com/academic/profile?id=eb0c728b296ec4a88349c72e297563fd&encoded=0&v=paper_preview&mkt=zh-cn
[9]
Minemoto T, Matsui T, Takakura H, et al. Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation. Sol Energy Materi Sol Cells, 2001, 67(1-4): 83 doi: 10.1016/S0927-0248(00)00266-X
[10]
[11]
Nie W, Tsai H, Asadpour R, et al. High-efficiency solution-processed perovskite solar cells with millimeter-scale grains. Science, 2015, 347(6221): 522 doi: 10.1126/science.aaa0472
[12]
Wei D, Wang T Y, Ji J, et al. Photo-induced degradation of lead halide perovskite solar cells caused by the hole transport layer/metal electrode interface. J Mater Chem A, 2016, 4(5): 1991 doi: 10.1039/C5TA08622A
[13]
Chen W Z, Huang X, Cheng Q J, et al. Simulation analysis of heterojunction ZnO/CdS/Cu(In,Ga)Se2 thin-film solar cells using wxAMPS. Optik-Int J Light Electron Opt, 2015, 127: 182 https://www.researchgate.net/publication/284001321_Simulation_analysis_of_heterojunction_ZnOCdSCuInGaSe2_thin-film_solar_cells_using_wxAMPS
[14]
Liu Y M, Sun Y, Rockett A. A new simulation software of solar cells-wxAMPS. Sol Energy Mater Sol Cells, 2012, 98(1): 124 http://cn.bing.com/academic/profile?id=8c0d5d842344d77f2958ac4a37c24c82&encoded=0&v=paper_preview&mkt=zh-cn
[15]
Song D D, Wei D, Cui P, et al. Dual function interfacial layer for highly efficient and stable lead halide perovskite solar cells. J Mater Chem A, 2016, 4(16): 6091 doi: 10.1039/C6TA00577B
[16]
[17]
De Wolf S, Holovsky J, Moon S J, et al. Organometallic halide perovskites: sharp optical absorption edge and its relation to photovoltaic performance. J Phys Chem Lett, 2014, 5(6): 1035 doi: 10.1021/jz500279b
[18]
Wojciechowski K, Saliba M, Leijtens T, et al. Sub-150℃ processed meso-superstructured perovskite solar cells with enhanced efficiency. Energy Environ Sci, 2014, 7(3): 1142 doi: 10.1039/C3EE43707H
[19]
Liu W Q, Zhang Y. Electrical characterization of TiO2/CH3 NH3PbI3 heterojunction solar cells. J Mater Chem A, 2014, 2(26): 10244 doi: 10.1039/c4ta01219d
[20]
Snaith H J, Gräzel M. Electron and hole transport through mesoporous TiO2 infiltrated with spiro-MeOTAD. Adv Mater, 2007, 19(21): 3643 doi: 10.1002/(ISSN)1521-4095
[21]
Noh J H, Sang H I, Jin H H, et al. Chemical management for colorful, efficient, and stable inorganic-organic hybrid nanostructured solar cells. Nano Lett, 2013, 13(4): 1764 doi: 10.1021/nl400349b
[22]
Laban W A, Etgar L. Depleted hole conductor-free lead halide iodide heterojunction solar cells. Energy Environ Sci, 2013, 6(11): 3249 doi: 10.1039/c3ee42282h
[23]
Stoumpos C C, Malliakas C D, Kanatzidis M G. Semiconducting tin and lead iodide perovskites with organic cations: phase transitions, high mobilities, and near-infrared photoluminescent properties. Inorg Chem, 2013, 52(15): 9019 doi: 10.1021/ic401215x
[24]
Fonash S J. Solar cell device physics. 2nd Ed. 2010
[25]
Liu Y M. Modeling of Cu(In,Ga)Se2 thin film solar cell device. Nankai University, 2012
Fig. 1.  (Color online) Schematic device structures.

Fig. 2.  (Color online) (a) J-V curves of standard/modulated CIGS devices with varied thickness of the absorber layer. The doping is fixed to 1 × 1016 cm-3. (b) J-V curves of standard/modulated CIGS devices with varied doping density of the absorber layer. The thickness in sandwich structures is fixed to 0.35 μm. (c) Electric field, and (d) recombination rate of standard/optimized CIGS devices.

Fig. 3.  (Color online) (a) The energy band of the respective layers in perovskite solar cells. (b) J-V curves of standard/modulated perovskite devices with varied thickness of the absorber layer. The doping is fixed to 1 × 1014 cm-3. (c) J-V curves of standard/modulated perovskite devices with varied doping density of the absorber layer. The thickness in heterojunction structure is fixed to 3 μm. (d) Recombination rate distribution in standard/modulated perovskite solar cells.

Table 1.   wxAMPS parameters set for the standard perovskite solar cell.

Parameter and unit Compact TiO2 CH3NH3PbI3 Spiro-OMeTAD hline
εr 100 [18] 30 [19] 3 [20]
Eg (eV) 3.2 1.55 [21] 3.17 [20]
χ (eV) 4 3.9 [22] 2.05 [20]
Thickness (μm) 0.03 0.35 0.15
Na (cm-3) 0 0 3 × 1018
Nd (cm-3) 5 × 1019 [18] 0 0
Nc (cm-3) 1 × 1021 2.5 × 1020 [23] 2.8 × 1019 [24]
Nv (cm-3) 1 × 1021 2.5 × 1020 [22] 1 × 1019 [24]
DownLoad: CSV

Table 2.   wxAMPS parameters set for the standard CIGS solar cell [25].

Parameter and unit ZnO CdS CIGS
εr 9 10 13.6
Eg (eV) 3.3 2.4 1.15
χ (eV) 4.4 4.2 4.5
Thickness (μm) 0.2 0.05 3
Na (cm-3) 0 0 2 × 1016
Nd (cm-3) 1 × 1018 1.1 × 1018 0
Nc (cm-3) 2.2 × 1018 2.2 × 1018 2.2 × 1018
Nv (cm-3) 1.8 × 1019 1.8 × 1019 1 × 1019
DownLoad: CSV

Table 3.   Device performances of standard/ preliminary modulated CIGS and perovskite solar cells.

Solar cellsActive layer propertyJSC (mA cm-2) VOC(V)FF(%)PCE (%)
CIGSHeterojunction3 μm, doping (1 × 1016)37.420.6379.0218.48
Sandwich3 μm, doping (1 × 1016)34.34 0.6265.7414.09
PerovskiteSandwich0.35 μm, doping (1 × 1014)24.08 1.08 76.1319.71
Heterojunction0.35 μm, doping (1 × 1014)18.24 0.7173.79 9.6
DownLoad: CSV
[1]
Sandberg O J, Sundqvist A, Nyman M, et al. Relating charge transport, contact properties, and recombination to open-circuit voltage in sandwich-type thin-film solar cells. Phys Rev Appl, 2016, 5(4): 044005 doi: 10.1103/PhysRevApplied.5.044005
[2]
Yang Y, Chen W, Dou L T, et al. High-performance multiple-donor bulk heterojunction solar cells. Nat Photonics, 2015, 9(3): 190 doi: 10.1038/nphoton.2015.9
[3]
Wu Y M, Yang R X, Tian H M, et al. Photoelectric characteristics of CH3NH3PbI3/p-Si heterojunction. J Semicond, 2016, 37(5): 053002 doi: 10.1088/1674-4926/37/5/053002
[4]
Jin H H, Han H J, Lee M H, et al. Stable semi-transparent CH3NH3PbI3 planar sandwich solar cells. Energy Environ Sci, 2015, 8(10): 2922 doi: 10.1039/C5EE01050K
[5]
Wu W Q, Lei BX, Rao H S, et al. Hydrothermal fabrication of hierarchically anatase TiO2 nanowire arrays on FTO glass for dye-sensitized solar cells. Sci Rep, 2013, 3(2): 1352 https://www.researchgate.net/publication/235740345_Hydrothermal_Fabrication_of_Hierarchically_Anatase_TiO2_Nanowire_arrays_on_FTO_Glass_for_Dye-sensitized_Solar_Cells
[6]
Sim H, Lee J, Cho S, et al. A study on the band structure of ZnO/CdS heterojunction for CIGS solar-cell application. J Semicond Technol Sci, 2015, 15(2): 267 doi: 10.5573/JSTS.2015.15.2.267
[7]
Contreras M A, Nakada T, Hongo M, et al. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2 Mo solar cell with 18.6% efficiency. Proceedings of World Conference on Photovoltaic Energy Conversion, 2003
[8]
Goetzberger A, Knobloch J, Voβ B, et al. The physics of solar cells. Imperial College Press, 2003: 384 http://cn.bing.com/academic/profile?id=eb0c728b296ec4a88349c72e297563fd&encoded=0&v=paper_preview&mkt=zh-cn
[9]
Minemoto T, Matsui T, Takakura H, et al. Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation. Sol Energy Materi Sol Cells, 2001, 67(1-4): 83 doi: 10.1016/S0927-0248(00)00266-X
[10]
[11]
Nie W, Tsai H, Asadpour R, et al. High-efficiency solution-processed perovskite solar cells with millimeter-scale grains. Science, 2015, 347(6221): 522 doi: 10.1126/science.aaa0472
[12]
Wei D, Wang T Y, Ji J, et al. Photo-induced degradation of lead halide perovskite solar cells caused by the hole transport layer/metal electrode interface. J Mater Chem A, 2016, 4(5): 1991 doi: 10.1039/C5TA08622A
[13]
Chen W Z, Huang X, Cheng Q J, et al. Simulation analysis of heterojunction ZnO/CdS/Cu(In,Ga)Se2 thin-film solar cells using wxAMPS. Optik-Int J Light Electron Opt, 2015, 127: 182 https://www.researchgate.net/publication/284001321_Simulation_analysis_of_heterojunction_ZnOCdSCuInGaSe2_thin-film_solar_cells_using_wxAMPS
[14]
Liu Y M, Sun Y, Rockett A. A new simulation software of solar cells-wxAMPS. Sol Energy Mater Sol Cells, 2012, 98(1): 124 http://cn.bing.com/academic/profile?id=8c0d5d842344d77f2958ac4a37c24c82&encoded=0&v=paper_preview&mkt=zh-cn
[15]
Song D D, Wei D, Cui P, et al. Dual function interfacial layer for highly efficient and stable lead halide perovskite solar cells. J Mater Chem A, 2016, 4(16): 6091 doi: 10.1039/C6TA00577B
[16]
[17]
De Wolf S, Holovsky J, Moon S J, et al. Organometallic halide perovskites: sharp optical absorption edge and its relation to photovoltaic performance. J Phys Chem Lett, 2014, 5(6): 1035 doi: 10.1021/jz500279b
[18]
Wojciechowski K, Saliba M, Leijtens T, et al. Sub-150℃ processed meso-superstructured perovskite solar cells with enhanced efficiency. Energy Environ Sci, 2014, 7(3): 1142 doi: 10.1039/C3EE43707H
[19]
Liu W Q, Zhang Y. Electrical characterization of TiO2/CH3 NH3PbI3 heterojunction solar cells. J Mater Chem A, 2014, 2(26): 10244 doi: 10.1039/c4ta01219d
[20]
Snaith H J, Gräzel M. Electron and hole transport through mesoporous TiO2 infiltrated with spiro-MeOTAD. Adv Mater, 2007, 19(21): 3643 doi: 10.1002/(ISSN)1521-4095
[21]
Noh J H, Sang H I, Jin H H, et al. Chemical management for colorful, efficient, and stable inorganic-organic hybrid nanostructured solar cells. Nano Lett, 2013, 13(4): 1764 doi: 10.1021/nl400349b
[22]
Laban W A, Etgar L. Depleted hole conductor-free lead halide iodide heterojunction solar cells. Energy Environ Sci, 2013, 6(11): 3249 doi: 10.1039/c3ee42282h
[23]
Stoumpos C C, Malliakas C D, Kanatzidis M G. Semiconducting tin and lead iodide perovskites with organic cations: phase transitions, high mobilities, and near-infrared photoluminescent properties. Inorg Chem, 2013, 52(15): 9019 doi: 10.1021/ic401215x
[24]
Fonash S J. Solar cell device physics. 2nd Ed. 2010
[25]
Liu Y M. Modeling of Cu(In,Ga)Se2 thin film solar cell device. Nankai University, 2012
1

Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping

Yong Chen, Yang Zhao, Qiufeng Ye, Zema Chu, Zhigang Yin, et al.

Journal of Semiconductors, 2019, 40(12): 122201. doi: 10.1088/1674-4926/40/12/122201

2

Simulation and application of external quantum efficiency of solar cells based on spectroscopy

Guanlin Chen, Can Han, Lingling Yan, Yuelong Li, Ying Zhao, et al.

Journal of Semiconductors, 2019, 40(12): 122701. doi: 10.1088/1674-4926/40/12/122701

3

Surface passivation of perovskite film for efficient solar cells

Yang (Michael) Yang

Journal of Semiconductors, 2019, 40(4): 040204. doi: 10.1088/1674-4926/40/4/040204

4

ZnO1-xTex and ZnO1-xSx semiconductor alloys as competent materials for opto-electronic and solar cell applications:a comparative analysis

Utsa Das, Partha P. Pal

Journal of Semiconductors, 2017, 38(8): 082001. doi: 10.1088/1674-4926/38/8/082001

5

Effect of metal-fingers/doped-ZnO transparent electrode on performance of GaN/InGaN solar cell

S.R. Routray, T.R. Lenka

Journal of Semiconductors, 2017, 38(9): 092001. doi: 10.1088/1674-4926/38/9/092001

6

ZnSe/ITO thin films:candidate for CdTe solar cell window layer

A.A. Khurram, M. Imran, Nawazish A. Khan, M. Nasir Mehmood

Journal of Semiconductors, 2017, 38(9): 093001. doi: 10.1088/1674-4926/38/9/093001

7

Substrate temperature dependent studies on properties of chemical spray pyrolysis deposited CdS thin films for solar cell applications

Kiran Diwate, Amit Pawbake, Sachin Rondiya, Rupali Kulkarni, Ravi Waykar, et al.

Journal of Semiconductors, 2017, 38(2): 023001. doi: 10.1088/1674-4926/38/2/023001

8

Study of the effect of switching speed of the a-SiC/c-Si (p)-based, thyristor-like, ultra-high-speed switches, using two-dimensional simulation techniques

Evangelos I. Dimitriadis, Nikolaos Georgoulas

Journal of Semiconductors, 2017, 38(5): 054001. doi: 10.1088/1674-4926/38/5/054001

9

Large area perovskite solar cell module

Longhua Cai, Lusheng Liang, Jifeng Wu, Bin Ding, Lili Gao, et al.

Journal of Semiconductors, 2017, 38(1): 014006. doi: 10.1088/1674-4926/38/1/014006

10

Simulation of double junction In0.46Ga0.54N/Si tandem solar cell

M. Benaicha, L. Dehimi, Nouredine Sengouga

Journal of Semiconductors, 2017, 38(4): 044002. doi: 10.1088/1674-4926/38/4/044002

11

Simulation of a high-efficiency silicon-based heterojunction solar cell

Jian Liu, Shihua Huang, Lü He

Journal of Semiconductors, 2015, 36(4): 044010. doi: 10.1088/1674-4926/36/4/044010

12

Analytical modeling and simulation of germanium single gate silicon on insulator TFET

T. S. Arun Samuel, N. B. Balamurugan

Journal of Semiconductors, 2014, 35(3): 034002. doi: 10.1088/1674-4926/35/3/034002

13

Simulation of through via bottom-up copper plating with accelerator for the filling of TSVs

Heng Wu, Zhen'an Tang, Zhu Wang, Wan Cheng, Daquan Yu, et al.

Journal of Semiconductors, 2013, 34(9): 096001. doi: 10.1088/1674-4926/34/9/096001

14

A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors

Sidi Ould Saad Hamady

Journal of Semiconductors, 2012, 33(3): 034002. doi: 10.1088/1674-4926/33/3/034002

15

Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell

Deng Qingwen, Wang Xiaoliang, Xiao Hongling, Ma Zeyu, Zhang Xiaobin, et al.

Journal of Semiconductors, 2010, 31(10): 103003. doi: 10.1088/1674-4926/31/10/103003

16

Performance analysis of solar cell arrays in concentrating light intensity

Xu Yongfeng, Li Ming, Wang Liuling, Lin Wenxian, Xiang Ming, et al.

Journal of Semiconductors, 2009, 30(8): 084011. doi: 10.1088/1674-4926/30/8/084011

17

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Shi Mingji, Wang Zhanguo, Liu Shiyong, Peng Wenbo, Xiao Haibo, et al.

Journal of Semiconductors, 2009, 30(6): 063001. doi: 10.1088/1674-4926/30/6/063001

18

Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

Hu Yuehui, Zhang Xiangwen, Qu Minghao, Wang Lifu, Zeng Tao, et al.

Journal of Semiconductors, 2009, 30(6): 064006. doi: 10.1088/1674-4926/30/6/064006

19

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, et al.

Chinese Journal of Semiconductors , 2006, 27(2): 298-303.

20

Structural Characteristic of CdS Thin films and Their Influence on Cu(in,Ga)Se2(CIGS) Thin Film Solar Cell

Xue Yuming, Sun Yun, He Qing, Liu Fangfang, Li Changjian,and Ji Mingliang, et al.

Chinese Journal of Semiconductors , 2005, 26(2): 225-229.

1. Dong, W., Qiao, W., Xiong, S. et al. Surface Passivation and Energetic Modification Suppress Nonradiative Recombination in Perovskite Solar Cells. Nano-Micro Letters, 2022, 14(1): 108. doi:10.1007/s40820-022-00854-0
2. Sajid, S., Elseman, A.M., Ji, J. et al. Computational Study of Ternary Devices: Stable, Low-Cost, and Efficient Planar Perovskite Solar Cells. Nano-Micro Letters, 2018, 10(3): 51. doi:10.1007/s40820-018-0205-5
3. Elseman, A.M., Shalan, A.E., Sajid, S. et al. Copper-Substituted Lead Perovskite Materials Constructed with Different Halides for Working (CH3NH3)2CuX4-Based Perovskite Solar Cells from Experimental and Theoretical View. ACS Applied Materials and Interfaces, 2018, 10(14): 11699-11707. doi:10.1021/acsami.8b00495
4. Sajid, Elseman, A.M., Ji, J., Wei, D. et al. Novel hole transport layer of nickel oxide composite with carbon for high-performance perovskite solar cells. Chinese Physics B, 2018, 27(1): 017305. doi:10.1088/1674-1056/27/1/017305
  • Search

    Advanced Search >>

    GET CITATION

    Tianyue Wang, Jiewei Chen, Gaoxiang Wu, Dandan Song, Meicheng Li. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite[J]. Journal of Semiconductors, 2017, 38(1): 014005. doi: 10.1088/1674-4926/38/1/014005
    T Y Wang, J W Chen, G X Wu, Dandan Song and A Song, M C Li. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite[J]. J. Semicond., 2017, 38(1): 014005. doi: 10.1088/1674-4926/38/1/014005.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 5014 Times PDF downloads: 51 Times Cited by: 4 Times

    History

    Received: 23 August 2016 Revised: 10 October 2016 Online: Published: 01 January 2017

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Tianyue Wang, Jiewei Chen, Gaoxiang Wu, Dandan Song, Meicheng Li. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite[J]. Journal of Semiconductors, 2017, 38(1): 014005. doi: 10.1088/1674-4926/38/1/014005 ****T Y Wang, J W Chen, G X Wu, Dandan Song and A Song, M C Li. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite[J]. J. Semicond., 2017, 38(1): 014005. doi: 10.1088/1674-4926/38/1/014005.
      Citation:
      Tianyue Wang, Jiewei Chen, Gaoxiang Wu, Dandan Song, Meicheng Li. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite[J]. Journal of Semiconductors, 2017, 38(1): 014005. doi: 10.1088/1674-4926/38/1/014005 ****
      T Y Wang, J W Chen, G X Wu, Dandan Song and A Song, M C Li. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite[J]. J. Semicond., 2017, 38(1): 014005. doi: 10.1088/1674-4926/38/1/014005.

      Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite

      DOI: 10.1088/1674-4926/38/1/014005
      Funds:

      Project supported by the National High-Tech R & D Program of China (No. 2015AA034601), the National Natural Science Foundation of China (Nos. 91333122, 61204064, 51202067, 51372082, 51402106, 11504107), the Ph.D. Programs Foundation of Ministry of Education of China (Nos. 20120036120006, 20130036110012), the Par-Eu Scholars Program, and the Fundamental Research Funds for the Central Universities.

      Project supported by the National High-Tech R & D Program of China No. 2015AA034601

      the Ph.D. Programs Foundation of Ministry of Education of China Nos. 20120036120006, 20130036110012

      the National Natural Science Foundation of China Nos. 91333122, 61204064, 51202067, 51372082, 51402106, 11504107

      the Par-Eu Scholars Program, and the Fundamental Research Funds for the Central Universities 

      More Information
      • Corresponding author: Meicheng Li,Email:mcli@ncepu.edu.cn
      • Received Date: 2016-08-23
      • Revised Date: 2016-10-10
      • Published Date: 2017-01-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return