J. Semicond. > 2017, Volume 38 > Issue 11 > 111001

INVITED REVIEW PAPERS

Field-effect transistor memories based on ferroelectric polymers

Yujia Zhang, Haiyang Wang, Lei Zhang, Xiaomeng Chen, Yu Guo, Huabin Sun and Yun Li

+ Author Affiliations

 Corresponding author: Yun Li, Email: yli@nju.edu.cn

DOI: 10.1088/1674-4926/38/11/111001

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Abstract: Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications.

Key words: ferroelectric polymers, field-effect transistor memories, ferroelectricity



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Fig. 1.  (Color online) (a) Hysteresis loop of PVDF, adapted from Ref. [6]. (b) 180° model for polarization reversal, adapted from Ref. [5]. (c) 60° model for polarization reversal adapted from Ref. [5]. (d) TT configurations of VDF molecules, adapted from Ref. [118]. (e) TG+TG- configurations of VDF molecules[118]. (f) T3G+T3G- configurations of VDF molecules, adapted from Ref. [118].

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Fig. 2.  (a) AFM image of P(VDF–TrFE) film using CYC as solvent (3 wt.%.), adapted from Ref. [119]. (b) AFM image of P(VDF–TrFE) film using 2-butanone as solvent (3 wt.%.), adapted from Ref. [119]. (c) AFM image of P(VDF–TrFE) film using 2-butanone as solvent (3 wt.%.) under the higher resolution, adapted from Ref. [119].

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Fig. 3.  (a) AFM image of P(VDF–TrFE) film using 2-butanone as solvent (3 wt.%.) under high humidity, adapted from Ref. [119]. (b) Higher resolution AFM image of P(VDF–TrFE) film using CYC as solvent (3 wt.%.) under high humidity, adapted from Ref. [119].

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Fig. 4.  (a) Higher resolution AFM image of P(VDF–TrFE) film using 2-butanone as solvent (3 wt.%.) after 120 °C annealing, adapted from Ref. [119]. (b) Higher resolution AFM image of P(VDF–TrFE) film using 2-butanone as solvent (3 wt.%.) after 135 °C annealing, adapted from Ref. [119]. (c) Higher resolution AFM image of P(VDF–TrFE) film using 2-butanone as solvent (3 wt.%.) after 140 °C annealing, adapted from Ref. [119].

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Fig. 5.  (Color online) (a) A ferroelectric field-effect transistor consisting of Au source–drain electrodes and rr-P3HT as semiconductor, adapted from Ref. [24]. (b) A transfer curve of a unipolar p-type Fe-FET with a ferroelectric layer thickness of 1.7 μm. adapted from Ref. [25]. (c) The capacitance-voltage characteristics of diodes have MIS diodes consisting a P(VDF–TrFE) gate dielectric. The amplitude and ac signal frequency were 300 mV and 1 kHz, adapted from Ref. [26].

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Fig. 6.  Transfer measurement of the Fe-FET with a gate dielectric whose thickness is 0.85 mm. The inset illustrated the device structure with MEH-PPV as semiconductor. Adapted from Ref. [29].

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Fig. 7.  (Color online) Schematic illustration of the Fe-OFET with the bottom-gate top-contact structure. The ultrathin PMMA film works as a buffering layer between organic semiconductor layers and ferroelectric insulator of P(VDF–TrFE), buffering the polarization fluctuation from the semiconductor-insulator interface, adapted from Ref. [47]. (b) Typical transfer curves of different devices with (blue line) and without (red line) PMMA buffering layer, adapted from Ref. [47]. (c) Distributions of the field-effect mobility of devices with and without PMMA buffering, adapted from Ref. [47]. (d) Dependence of capacitance divided by channel conductance on gate voltage frequency, adapted from Ref. [47]. (e) and (f) illustrate the pulse responses of the Fe-OFETs with and without PMMA buffering, adapted from Ref. [47]. (g) AFM images of surfaces of P(VDF–TrFE), adapted from Ref. [47]. (h) AFM images of surfaces of P(VDF–TrFE)/PMMA, adapted from Ref. [47]. (i) AFM images of surfaces of C8-BTBT film on P(VDF–TrFE), adapted from Ref. [47]. (j) AFM images of surfaces of C8-BTBT film on P(VDF–TrFE)/PMMA, adapted from Ref. [47]. (k) X-ray diffraction (XRD) signal of C8-BTBT films on P(VDF–TrFE) and P(VDF–TrFE)/PMMA, adapted from Ref. [47]. (l) Illustrative presentation of the polarization fluctuation within the semiconductor/insulator interface, influencing the charge carrier transport, adapted from Ref. [47]. (m) Such a polarization fluctuation can be suppressed by depositing the ultrathin PMMA film between the semiconductor and ferroelectric layers, and the charge carrier transport is improved, adapted from Ref. [47].

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Fig. 8.  (Color online) Cross-section schematic of Fe-OFETs. The length of the channel varies from 50 to 250 μm, adapted from Ref. [53]. (b) AFM morphology images of the annealed P(VDF–TrFE) films without and with PMMA buffering layer, adapted from Ref. [53]. (c) Transfer curves of Fe-OFETs with (blue line) and without (red line) PMMA buffering layer, poling by the gate pulse (−30 V for 1 s). The inset indicates the typical transfer curve of the Fe-OFETs with (blue line) and without (red line) PMMA buffering layer at the drain voltage of −2 V, adapted from Ref. [53]. The modified transmission-line method presents at different (Vg – Vth) for different channel Fe-OFETs (d) without and (e) with PMMA, adapted from Ref. [53]. (f) Extracted contact resistance values of devices with (blue triangles) and without (red circles) PMMA, adapted from Ref. [53].

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Fig. 9.  (Color online) Flexible Fe-TFT based on a-IGZO. (a) Normalized maximum drain current at VGS of 5 V and VDS of 0.1 V, adapted from Ref. [73]. (b) Threshold voltage shift (black line for the forward branch and red line for the reverse branch). Extracted from the same Fe-TFT for all values. There is a 5 min interval between two consecutive measurement points, adapted from Ref. [73].

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Fig. 10.  (Color online) (a) Schematic view of a top-gate top-contact Fe-FET, adapted from Ref. [81]. (b) Specific transfer characteristic of the Fe-FET with InSiO film thermally annealed at 25 °C after being sputtered, adapted from Ref. [ 81]. (c) Capacitance/channel conductance on the frequency of VG, adapted from Ref. [81]. (d) Pulse response of the Fe-FET memory from off to on state, adapted from Ref. [81]. (e) Pulse response of the Fe-FET memory from on to off state. (f) Measurements of retention characteristic of on and off currents, adapted from Ref. [81].

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Fig. 11.  (Color online) (a) OM image of FeCMOS with dual-gate on the same p+-Si substrate using p-type BFM 03 (W/L = 0.55) and n-type MFM 01 (W/L = 1.06), adapted from Ref. [103]. (b) Inset surface topographic images (top for BFM 03 and bottom for MFM 02) and AFM step height values, adapted from [103]. (c) 3D schematic view of Fe-CMOS with dual-gate using BP and MoS2 channel, adapted from Ref. [103]. (d) ID versus VG memory hysteresis curves measured at a fixed VBG of 0–20 V by steps of 5 V, adapted from Ref. [103].

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Fig. 12.  (Color online) (a) Flexible substrate, adapted from Ref. [117]. (b) Rigid substrate; from bottom to top: substrate, 200 nm thick Si3N4, 30 nm thick SnO, 10 nm thick Ti/40 nm thick Au, 300 nm thick P(VDF–TrFE) and 80 nm thick Al. Retention characteristics, adapted from Ref. [117]. (c) Rigid device, adapted from Ref. [117]. (d) Flexible device. VG of −30/+30 V and a 1 s pulse produce the ON/OFF states. Retention characteristics measured at gate bias of zero, adapted from Ref. [117].

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    Received: 06 May 2017 Revised: 22 September 2017 Online: Uncorrected proof: 27 October 2017Accepted Manuscript: 13 November 2017Published: 01 November 2017

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      Article Navigation >  Journal of Semiconductors  > 2017  >  38(11): 111001
      Yujia Zhang, Haiyang Wang, Lei Zhang, Xiaomeng Chen, Yu Guo, Huabin Sun, Yun Li. Field-effect transistor memories based on ferroelectric polymers[J]. Journal of Semiconductors, 2017, 38(11): 111001. doi: 10.1088/1674-4926/38/11/111001 ****Y J Zhang, H Y Wang, L Zhang, X M Chen, Y Guo, H B Sun, Y Li. Field-effect transistor memories based on ferroelectric polymers[J]. J. Semicond., 2017, 38(11): 111001. doi: 10.1088/1674-4926/38/11/111001.
      Citation:
      Yujia Zhang, Haiyang Wang, Lei Zhang, Xiaomeng Chen, Yu Guo, Huabin Sun, Yun Li. Field-effect transistor memories based on ferroelectric polymers[J]. Journal of Semiconductors, 2017, 38(11): 111001. doi: 10.1088/1674-4926/38/11/111001 ****
      Y J Zhang, H Y Wang, L Zhang, X M Chen, Y Guo, H B Sun, Y Li. Field-effect transistor memories based on ferroelectric polymers[J]. J. Semicond., 2017, 38(11): 111001. doi: 10.1088/1674-4926/38/11/111001.
      shu

      Field-effect transistor memories based on ferroelectric polymers

      DOI: 10.1088/1674-4926/38/11/111001

      • School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

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      Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC–JSPS Bilateral Joint Research Projects (No. 61511140098).

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      • Corresponding author: Email: yli@nju.edu.cn
      • Received Date: 2017-05-06
      • Revised Date: 2017-09-22
      • Published Date: 2017-11-01

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