Fig. 1.
Structure of In0.46Ga0.54N/Si tandem solar cell with In0.5Ga0.5N (n+)/Si (p+) and GaAs (n+)/GaAs (p+) tunnel junctions.
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| Citation: |
M. Benaicha, L. Dehimi, Nouredine Sengouga. Simulation of double junction In0.46Ga0.54N/Si tandem solar cell[J]. Journal of Semiconductors, 2017, 38(4): 044002. doi: 10.1088/1674-4926/38/4/044002
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M Benaicha, L Dehimi, N Sengouga. Simulation of double junction In0.46Ga0.54N/Si tandem solar cell[J]. J. Semicond., 2017, 38(4): 044002. doi: 10.1088/1674-4926/38/4/044002.
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Simulation of double junction In0.46Ga0.54N/Si tandem solar cell
DOI: 10.1088/1674-4926/38/4/044002
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Abstract
A comprehensive study of high efficiency In0.46Ga0.54N/Si tandem solar cell is presented. A tunnel junction (TJ) was needed to interconnect the top and bottom sub-cells. Two TJ designs, integrated within this tandem: GaAs (n+)/GaAs (p+) and In0.5Ga0.5N (n+)/Si (p+) were considered. Simulations of GaAs (n+)/GaAs (p+) and In0.5Ga0.5N (n+)/Si (p+) TJ I-V characteristics were studied for integration into the proposed tandem solar cell. A comparison of the simulated solar cell I-V characteristics under 1 sun AM1.5 spectrum was discussed in terms of short circuit current density (Jsc), open circuit voltage (VOC), fill factor (FF) and efficiency (η) for both tunnel junction designs. Using GaAs (n+)/GaAs (p+) tunnel junction, the obtained values of Jsc=21.74 mA/cm2, VOC=1.81 V, FF=0.87 and η=34.28%, whereas the solar cell with the In0.5Ga0.5N/Si tunnel junction reported values of Jsc=21.92 mA/cm2, VOC=1.81 V, FF=0.88 and η=35.01%. The results found that required thicknesses for GaAs (n+)/GaAs (p+) and In0.5Ga0.5N (n+)/Si (p+) tunnel junctions are around 20 nm, the total thickness of the top InGaN can be very small due to its high optical absorption coefficient and the use of a relatively thick bottom cell is necessary to increase the conversion efficiency.-
Keywords:
- InGaN/Si,
- tandem solar cells,
- tunnel junctions,
- simulation
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References
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