Citation: |
Han Wang, Shilong Li, Honglou Zhen, Xiaofei Nie, Gaoshan Huang, Yongfeng Mei, Wei Lu. Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors[J]. Journal of Semiconductors, 2017, 38(5): 054006. doi: 10.1088/1674-4926/38/5/054006
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H Wang, S L Li, H L Zhen, X F Nie, G S Huang, Y F Mei, W Lu. Strain effect on intersubband transitions in rolled-up quantum well infraredphotodetectors[J]. J. Semicond., 2017, 38(5): 054006. doi: 10.1088/1674-4926/38/5/054006.
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Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors
DOI: 10.1088/1674-4926/38/5/054006
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Abstract
Pre-strained nanomembranes with four embedded quantum wells (QWs) are rolled up into three dimensional (3D) tubular QW infrared photodetectors (QWIPs), which are based on the QW intersubband transition (ISBT).A redshift of~0.42 meV in photocurrent response spectra is observed and attributed to two strain contributions due to the rolling of the pre-strained nanomembranes.One is the overall strain that mainly leads to a redshift of~0.5 meV, and the other is the strain gradient which results in a very tiny variation.The blue shift of the photocurrent response spectra with the external bias are also observed as quantum-confined Stark effect (QCSE) in the ISBT. -
References
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