J. Semicond. > 2017, Volume 38 > Issue 7 > 074006
|

SEMICONDUCTOR DEVICES

Study on the mechanism of color coordinate shift of LED package

Yunyi Zhuang1, 3, Yong Wang1, , Bobo Yang3, Zhanguo Li1, Lei Yang2 and Jun Zou3,

+ Author Affiliations

 Corresponding author: Yong Wang, Email: eeywang@gmail.com; Jun Zou, Email: zoujun@sit.edu.cn

DOI: 10.1088/1674-4926/38/7/074006

PDF

Abstract: In the paper, the influences of the chip, silicone and phosphors on the color coordinate shift of LED were studied. In the process of LED baking, it was found that the effect of the chip and silicone on the color coordinate drift is less than 3% through the analysis of each influencing factor. But the influence of the phosphors is large and accounted for 11.11% of the overall impact factors. Therefore, it is important to select the better green phosphors in thermal stability for the LED package and it has a guiding significance to the color coordinate of LED distribution.

Key words: light-emitting diode (LED), phosphors, spectra intensity, shift



[1]
Jin S Z, Zhang Z X, Guo Z J, et al. Research on temperature property of illumination white LED. J Lumin, 2002, 23(4): 399 (in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-FGXB200204023.htm
[2]
Sun Q, Yan W, Feng M X, et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J Semicond, 2016, 37(4): 61 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=15120109&journal_id=bdtxbcn
[3]
Schubert E F, Kim J K. Solid-state light sources getting smart. Science, 2005, 308(5726): 1274 doi: 10.1126/science.1108712
[4]
Kimura N, Sakuma K, Hirafune S, et al. Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode. Appl Phys Lett, 2007, 90(5): 051109 doi: 10.1063/1.2437090
[5]
Hirosaki N, Xie R J, Kimoto K, et al. Characterization and properties of green-emitting β-SiAlON:Eu2+, powder phosphors for white light-emitting diodes. Appl Phys Lett, 2005, 86(21): 211905 doi: 10.1063/1.1935027
[6]
Kim J S, Jeon P E, Choi J C, et al. Warm-white-light emitting diode utilizing a single-phase full-color Ba3MgSi2O8:Eu2+, Mn2+ phosphor. Appl Phys Lett, 2004, 84(15): 2931 doi: 10.1063/1.1695441
[7]
Kuo C H, Sheu J K, Chang S J, et al. n-UV+blue/green/red white light emitting diode lamps. Jpn J Appl Phys, 2003, 42(4): 2284 http://www.researchgate.net/profile/Shoou-Jinn_Chang/publication/234496039_n-UVBlueGreenRed_White_Light_Emitting_Diode_Lamps/links/0046352c1904c74b84000000.pdf
[8]
Park J K, Lim M A, Kim C H, et al. White light-emitting diodes of GaN-based Sr2SiO4: Eu and the luminescent properties. Appl Phys Lett, 2003, 82(82): 683 https://www.researchgate.net/publication/234846420_White_light-emitting_diodes_of_GaN-based_Sr2SiO4_Eu_and_the_luminescent_properties
[9]
Huh Y D, Shim J H, Kim Y, et al. Optical properties of three-band white light emitting diodes. J Electrochem Soc, 2003, 150(2): H57 doi: 10.1149/1.1535914
[10]
Sato Y, Takahashi N, Sato S. Full-color fluorescent display devices using a near-UV light-emitting diode. Jpn J Appl Phys, 1996, 35(7A): L838 https://www.researchgate.net/publication/243733886_Full-Color_Fluorescent_Display_Devices_Using_a_Near-UV_Light-Emitting_Diode
[11]
Choi K J, Park J K, Kim K N, et al. Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip. Jpn J Appl Phys, 2002, 124-126(Part 2): L371
[12]
Hu J, Yang L, Shin M W. Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes. J Phys D, 2008, 41(3): 035107 doi: 10.1088/0022-3727/41/3/035107
[13]
Yamada M, Naitou T, Izuno K, et al. Red-enhanced white-light-emitting diode using a new red phosphor. Jpn J Appl Phys, 2003, 42(42): L20 https://www.researchgate.net/publication/243741743_Red-Enhanced_White-Light-Emitting_Diode_Using_a_New_Red_Phosphor
[14]
Jang M S, Kim W H, Kang Y R, et al. Effect of particle size on the optical properties of yellow silicate phosphor in light-emitting diodes. Int J Appl Ceram Technol, 2013, 10(4): 617 doi: 10.1111/ijac.2013.10.issue-4
[15]
Guo E Q, Liu Z Q, Wang L C, et al. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer. J Semicond, 2011, 32(6): 47 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=10122101&journal_id=bdtxbcn
[16]
Schotter P, Schmidt R, Schneider J. Luminescence conversion of blue light emitting diodes. Appl Phys A, 1997, 64(4): 417 doi: 10.1007/s003390050498
[17]
Byun H J, Song W S, Kim Y S, et al. Solvothermally grown Ce3+-doped Y3Al5O12 colloidal nanocrystals: spectral variations and white LED characteristics. J Phys D, 2010, 43(19): 195401 doi: 10.1088/0022-3727/43/19/195401
[18]
Shlotter P, Baur J, Hielscher C, et al. Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs. Mater Sci Eng B, 1999, 59(1-3): 390 doi: 10.1016/S0921-5107(98)00352-3
[19]
Duan C J, Delsing A C A, Hintzen H T. Red emission from Mn2+, on a tetrahedral site in MgSiN2. J Lumin, 2009, 129(6): 645 doi: 10.1016/j.jlumin.2009.01.010
[20]
Watanabe H, Kijima N. Crystal structure and luminescence properties of SrxCa1-xAlSiN3: Eu2+, mixed nitride phosphors. J Alloys Compd, 2009, 475(1): 434 https://www.researchgate.net/publication/248179401_Crystal_Structure_and_Luminescence_Properties_of_SrxCa1-xAlSiN3Eu2_Mixed_Nitride_Phosphors
[21]
Sohn K S. Effect of inhomogeneous broadening on time-resolved photoluminescence in CaAlSiN3:Eu2+. Opt Lett, 2010, 35(7): 1004 doi: 10.1364/OL.35.001004
[22]
Zhang Z, Delsing A C A, Notten P H L, et al. Photoluminescence properties of red-emitting Mn2+-activated CaAlSiN3 phosphor for white-LEDs. ECS J Solid State Sci Technol, 2013, 2(4): R70 doi: 10.1149/2.017304jss
[23]
Yang B B, Zou J, Wang F C, et al. Optical and reliability properties studies of green YAG phosphors by Ga substitution. J Mater Sci: Mater Electron, 2016, 27(4): 3376 doi: 10.1007/s10854-015-4168-8
[24]
Choi M, Kim K H, Yun C H, et al. Direct correlation between reliability and pH changes of phosphors for white light-emitting diodes. Microelectron Reliab, 2014, 54(12): 2849 doi: 10.1016/j.microrel.2014.07.141
[25]
Ren X L, Pang C, Qin Z, et al. Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer. J Semicond, 2016, 37(4): 045003 doi: 10.1088/1674-4926/37/4/045003
[26]
Liu X Y, Ma H, Yu D Q, et al. Optimal design analysis for thermal performance of high power 2. 5D package. J Semicond, 2016, 37(3): 035006 doi: 10.1088/1674-4926/37/3/035006
[27]
Chen Q, Chen Q, Luo X B. Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test. Rev Sci Instrums, 2014, 85(9): 096111 doi: 10.1063/1.4896352
[28]
Yanga S C, Lin P, Wang C P, et al. Failure and degradation mechanisms of high-power white light emitting diodes. Microelectron Reliab, 2010, 50(7): 959 doi: 10.1016/j.microrel.2010.03.007
[29]
Luo X B, Hu R, Liu S G, et al. Heat and fluid flow in high-power LED packaging and applications. Prog Energy Combustion Sci, 2016, 56: 1 doi: 10.1016/j.pecs.2016.05.003
Fig. 1.  The structure of the packaged LED light.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  CIE chromaticity of phosphors discussed in this paper.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Thermal reliability.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Electroluminescence spectra of (a) the LED device with chip and (b) the LED device with silicone coating.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Photoluminescence spectra of (a) the Lu3Al5O12:Ce3+ phosphor and (b) of the (Sr, Ca)AlSiN3:Eu2+ phosphor excited at 455 nm after high-temperature and high-humidity for 1000 h.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) Electroluminescence spectra of (a) Lu3Al5O12:Ce3+ phosphor and (b) (Sr, Ca)AlSiN3:Eu2+ phosphor combined with blue light (455 nm) and silicone after 3.5 hours.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) (a) The photoluminescence emission spectra of (a) Lu3Al5O12:Ce3+ phosphor and (b) (Sr, Ca)AlSiN3:Eu2+ phosphor combined with blue light (455 nm) after hydrolyzing.

DownLoad: Full-Size Img PowerPoint
[1]
Jin S Z, Zhang Z X, Guo Z J, et al. Research on temperature property of illumination white LED. J Lumin, 2002, 23(4): 399 (in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-FGXB200204023.htm
[2]
Sun Q, Yan W, Feng M X, et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J Semicond, 2016, 37(4): 61 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=15120109&journal_id=bdtxbcn
[3]
Schubert E F, Kim J K. Solid-state light sources getting smart. Science, 2005, 308(5726): 1274 doi: 10.1126/science.1108712
[4]
Kimura N, Sakuma K, Hirafune S, et al. Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode. Appl Phys Lett, 2007, 90(5): 051109 doi: 10.1063/1.2437090
[5]
Hirosaki N, Xie R J, Kimoto K, et al. Characterization and properties of green-emitting β-SiAlON:Eu2+, powder phosphors for white light-emitting diodes. Appl Phys Lett, 2005, 86(21): 211905 doi: 10.1063/1.1935027
[6]
Kim J S, Jeon P E, Choi J C, et al. Warm-white-light emitting diode utilizing a single-phase full-color Ba3MgSi2O8:Eu2+, Mn2+ phosphor. Appl Phys Lett, 2004, 84(15): 2931 doi: 10.1063/1.1695441
[7]
Kuo C H, Sheu J K, Chang S J, et al. n-UV+blue/green/red white light emitting diode lamps. Jpn J Appl Phys, 2003, 42(4): 2284 http://www.researchgate.net/profile/Shoou-Jinn_Chang/publication/234496039_n-UVBlueGreenRed_White_Light_Emitting_Diode_Lamps/links/0046352c1904c74b84000000.pdf
[8]
Park J K, Lim M A, Kim C H, et al. White light-emitting diodes of GaN-based Sr2SiO4: Eu and the luminescent properties. Appl Phys Lett, 2003, 82(82): 683 https://www.researchgate.net/publication/234846420_White_light-emitting_diodes_of_GaN-based_Sr2SiO4_Eu_and_the_luminescent_properties
[9]
Huh Y D, Shim J H, Kim Y, et al. Optical properties of three-band white light emitting diodes. J Electrochem Soc, 2003, 150(2): H57 doi: 10.1149/1.1535914
[10]
Sato Y, Takahashi N, Sato S. Full-color fluorescent display devices using a near-UV light-emitting diode. Jpn J Appl Phys, 1996, 35(7A): L838 https://www.researchgate.net/publication/243733886_Full-Color_Fluorescent_Display_Devices_Using_a_Near-UV_Light-Emitting_Diode
[11]
Choi K J, Park J K, Kim K N, et al. Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip. Jpn J Appl Phys, 2002, 124-126(Part 2): L371
[12]
Hu J, Yang L, Shin M W. Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes. J Phys D, 2008, 41(3): 035107 doi: 10.1088/0022-3727/41/3/035107
[13]
Yamada M, Naitou T, Izuno K, et al. Red-enhanced white-light-emitting diode using a new red phosphor. Jpn J Appl Phys, 2003, 42(42): L20 https://www.researchgate.net/publication/243741743_Red-Enhanced_White-Light-Emitting_Diode_Using_a_New_Red_Phosphor
[14]
Jang M S, Kim W H, Kang Y R, et al. Effect of particle size on the optical properties of yellow silicate phosphor in light-emitting diodes. Int J Appl Ceram Technol, 2013, 10(4): 617 doi: 10.1111/ijac.2013.10.issue-4
[15]
Guo E Q, Liu Z Q, Wang L C, et al. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer. J Semicond, 2011, 32(6): 47 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=10122101&journal_id=bdtxbcn
[16]
Schotter P, Schmidt R, Schneider J. Luminescence conversion of blue light emitting diodes. Appl Phys A, 1997, 64(4): 417 doi: 10.1007/s003390050498
[17]
Byun H J, Song W S, Kim Y S, et al. Solvothermally grown Ce3+-doped Y3Al5O12 colloidal nanocrystals: spectral variations and white LED characteristics. J Phys D, 2010, 43(19): 195401 doi: 10.1088/0022-3727/43/19/195401
[18]
Shlotter P, Baur J, Hielscher C, et al. Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs. Mater Sci Eng B, 1999, 59(1-3): 390 doi: 10.1016/S0921-5107(98)00352-3
[19]
Duan C J, Delsing A C A, Hintzen H T. Red emission from Mn2+, on a tetrahedral site in MgSiN2. J Lumin, 2009, 129(6): 645 doi: 10.1016/j.jlumin.2009.01.010
[20]
Watanabe H, Kijima N. Crystal structure and luminescence properties of SrxCa1-xAlSiN3: Eu2+, mixed nitride phosphors. J Alloys Compd, 2009, 475(1): 434 https://www.researchgate.net/publication/248179401_Crystal_Structure_and_Luminescence_Properties_of_SrxCa1-xAlSiN3Eu2_Mixed_Nitride_Phosphors
[21]
Sohn K S. Effect of inhomogeneous broadening on time-resolved photoluminescence in CaAlSiN3:Eu2+. Opt Lett, 2010, 35(7): 1004 doi: 10.1364/OL.35.001004
[22]
Zhang Z, Delsing A C A, Notten P H L, et al. Photoluminescence properties of red-emitting Mn2+-activated CaAlSiN3 phosphor for white-LEDs. ECS J Solid State Sci Technol, 2013, 2(4): R70 doi: 10.1149/2.017304jss
[23]
Yang B B, Zou J, Wang F C, et al. Optical and reliability properties studies of green YAG phosphors by Ga substitution. J Mater Sci: Mater Electron, 2016, 27(4): 3376 doi: 10.1007/s10854-015-4168-8
[24]
Choi M, Kim K H, Yun C H, et al. Direct correlation between reliability and pH changes of phosphors for white light-emitting diodes. Microelectron Reliab, 2014, 54(12): 2849 doi: 10.1016/j.microrel.2014.07.141
[25]
Ren X L, Pang C, Qin Z, et al. Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer. J Semicond, 2016, 37(4): 045003 doi: 10.1088/1674-4926/37/4/045003
[26]
Liu X Y, Ma H, Yu D Q, et al. Optimal design analysis for thermal performance of high power 2. 5D package. J Semicond, 2016, 37(3): 035006 doi: 10.1088/1674-4926/37/3/035006
[27]
Chen Q, Chen Q, Luo X B. Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test. Rev Sci Instrums, 2014, 85(9): 096111 doi: 10.1063/1.4896352
[28]
Yanga S C, Lin P, Wang C P, et al. Failure and degradation mechanisms of high-power white light emitting diodes. Microelectron Reliab, 2010, 50(7): 959 doi: 10.1016/j.microrel.2010.03.007
[29]
Luo X B, Hu R, Liu S G, et al. Heat and fluid flow in high-power LED packaging and applications. Prog Energy Combustion Sci, 2016, 56: 1 doi: 10.1016/j.pecs.2016.05.003

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2963 Times PDF downloads: 33 Times Cited by: 0 Times

    History

    Received: 01 August 2016 Revised: 06 February 2017 Online: Published: 01 July 2017

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2017  >  38(7): 074006
      Yunyi Zhuang, Yong Wang, Bobo Yang, Zhanguo Li, Lei Yang, Jun Zou. Study on the mechanism of color coordinate shift of LED package[J]. Journal of Semiconductors, 2017, 38(7): 074006. doi: 10.1088/1674-4926/38/7/074006 ****Y Y Zhuang, Y Wang, B B Yang, Z G Li, L Yang, J Zou. Study on the mechanism of color coordinate shift of LED package[J]. J. Semicond., 2017, 38(7): 074006. doi: 10.1088/1674-4926/38/7/074006.
      Citation:
      Yunyi Zhuang, Yong Wang, Bobo Yang, Zhanguo Li, Lei Yang, Jun Zou. Study on the mechanism of color coordinate shift of LED package[J]. Journal of Semiconductors, 2017, 38(7): 074006. doi: 10.1088/1674-4926/38/7/074006 ****
      Y Y Zhuang, Y Wang, B B Yang, Z G Li, L Yang, J Zou. Study on the mechanism of color coordinate shift of LED package[J]. J. Semicond., 2017, 38(7): 074006. doi: 10.1088/1674-4926/38/7/074006.
      shu

      Study on the mechanism of color coordinate shift of LED package

      DOI: 10.1088/1674-4926/38/7/074006
      • 1.

        National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

      • 2.

        Zhejiang Emitting Optoelectronic Technology Co., Ltd., Jiaxing 314100, China

      • 3.

        School of Science, Institute of Technology, Shanghai 201418, China

      Funds:

      Shanghai Municipal Alliance Program Lm201505

      Shanghai Cooperative Project ShanghaiCXY-2013-61

      Shanghai Municipal Alliance Program Lm201514

      Project supported by the National Natural Science Foundation of China 11474036

      Shanghai Municipal Alliance Program Lm201455

      Science and Technology Commission of Shanghai Municipality (CN) 14500503300

      Natural Science Foundation of Shanghai 12ZR1430900

      Project supported by the National Natural Science Foundation of China (No. 11474036), the Natural Science Foundation of Shanghai (No. 12ZR1430900), the Shanghai Institute of Technology Talents Scheme (No. YJ2014-04), the Shanghai Municipal Alliance Program (Nos. Lm201514, Lm201505, Lm201455), the Science and Technology Commission of Shanghai Municipality (CN) (No. 14500503300), the Shanghai Cooperative Project (No. ShanghaiCXY-2013-61), and the Jiashan County Technology Program (No. 20141316)

      Shanghai Institute of Technology Talents Scheme YJ2014-04

      Jiashan County Technology Program 20141316

      More Information
      • Corresponding author: Yong Wang, Email: eeywang@gmail.com; Jun Zou, Email: zoujun@sit.edu.cn
      • Received Date: 2016-08-01
      • Revised Date: 2017-02-06
      • Published Date: 2017-07-01

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return