J. Semicond. > 2017, Volume 38 > Issue 8 > 085002
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SEMICONDUCTOR INTEGRATED CIRCUITS

A high-speed power detector MMIC for E-band communication

Linpu Huang1, 2, Qiang Hu1 and Jian Zhang1,

+ Author Affiliations

 Corresponding author: Jian Zhang, Email:zj@mail.sim.ac.cn

DOI: 10.1088/1674-4926/38/8/085002

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Abstract: An E-band high speed power detector MMIC using 0.1 μm pHEMT technology has been designed, manufactured and experimentally characterized. By employing a 4-way quadrature structure for phase cancellation, the first, second and third harmonics can be suppressed and the ripple at the output is minimized. Compared to conventional topology with a low pass filter, a short response time and high speed performance of demodulation can be reached. Simulated results indicate that the detector is capable of demodulating an on-off keying signal at a data rate up to 5 Gbps. The fabricated chip occupies 1×1.5 mm2 and the on-wafer measurement shows a return loss of less than -15 dB, responsivity better than 700 mV/mW and dynamic range of more than 25 dB over 70 to 90 GHz.

Key words: pHEMT, power detector, high-speed, E-band



[1]
Woo B C, Jin L J, Chan E K, et al. A 60 GHz 5 Gb/s gain-boosting OOK demodulator in 0.13μm CMOS. IEEE Microwave Wireless Compon Lett, 2011, 21(2):101 doi: 10.1109/LMWC.2010.2096411
[2]
Uzunkol M, Shin W, Rebeiz G M. Design and analysis of a low-power 3-6-Gb/s 55-GHz OOK receiver with high-temperature performance. IEEE Trans Microwave Theory Tech, 2012, 60(10):3263 doi: 10.1109/TMTT.2012.2211381
[3]
Bao M Q, Chen J J, Kozhuharov R, et al. A high-speed power detector for D-band communication. IEEE Trans Microwave Theory Tech, 2014, 62(7):1515 doi: 10.1109/TMTT.2014.2321115
[4]
Oncu A, Fujishima M. 19.2 mW 2 Gbps CMOS pulse receiver for 60 GHz band wireless communication. IEEE Symposium on VLSI Circuits, 2008:158 https://www.researchgate.net/publication/260627119_98_mW_10_Gbps_Wireless_Transceiver_Chipset_With_D-Band_CMOS_Circuits
[5]
Lin F, Brinkhoff J, Kai K, et al. A low power 60 GHz OOK transceiver system in 90 nm CMOS with innovative on-chip AMC antenna. IEEE Asian Solid-State Circuits Conference, 2009:349 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5357167&filter%3DAND%28p_IS_Number%3A5357143%29
[6]
Zirath H, He Z X. Power detectors and envelope detectors in mHEMT MMIC-technology for millimeterwave applications Microwave Integrated Circuits Conference (EuMIC), 2010: 353 https://www.researchgate.net/publication/224186473_Power_detectors_and_envelope_detectors_in_mHEMT_MMIC-technology_for_millimeterwave_applications
[7]
Zhang J, Fusco V. A compact Ⅴ-band active SiGe power detector. Microwave Integrated Circuits Conference (EuMIC), 2012 https://www.researchgate.net/publication/261212519_A_compact_V-band_active_SiGe_power_detector
[8]
Hrobak M, Sterns M, Schramm M, et al. Planar zero bias Schottky diode detector operating in the E-and W-band. European Microwave Conference, 2013:179 http://ieeexplore.ieee.org/document/6686620/?reload=true&arnumber=6686620&punumber%3D6679726%26sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6686544%29%26pageNumber%3D4
[9]
Radisic V, Leong K M K H, Zhang C B, et al. Demonstration of a micro-integrated sub-millimeter-wave pixel. IEEE Trans Microw Theory Technol, 2013, 61(8):2949 doi: 10.1109/TMTT.2013.2272379
[10]
Hoefle M, Penirschke A, Cojocari O, et al. Broadband zero-bias Schottky detector for E-field measurements up to 100 GHz and beyond. 38th International Conference on Infrared, Millimeter, and Terahertz Waves, 2013:1 https://www.researchgate.net/publication/261268838_Broadband_zero-bias_Schottky_detector_for_E-field_measurements_up_to_100_GHz_and_beyond
[11]
Dai Y B, Han K F, Yan N, et al. A high dynamic range linear RF power detector with a preceding LNA. J Semicond, 2012, 33(1):015005 doi: 10.1088/1674-4926/33/1/015005
[12]
Yao C F, Zhou M, Luo Y S, et al. Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes. J Semicond, 2015, 36(6):065002 doi: 10.1088/1674-4926/36/6/065002
[13]
Zhang J, Ye Y. W band high conversion gain, single balanced subharmonically gate pumped mixer with novel size-reduced marchand balun. IEEE International Microwave Symposium MTT-S, 2015 http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=7166980
[14]
Ye Y, Zhang J, Sun X W. W-band travelingwave frequency doubler with output power of 9 dBm and power efficiency of 11.2%. IEEE Microwave Wireless Compon Lett, 2014, 24:704 doi: 10.1109/LMWC.2014.2340792
[15]
Mass S A. Nonlinear microwave and RF circuits. Boston:Artech House, 2003
Fig. 1.  Block diagram of the proposed detector.

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Fig. 2.  Schematic of the proposed detector.

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Fig. 3.  Drain current of a pHEMT ($2 \times 25$ $\mu $m) versus gate bias voltage and the second derivative of drain current with respect to gate bias voltage.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Simulated PD output at a data rate of 5 Gbps over a carrier frequency of 83 GHz.

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Fig. 5.  Measurement setups for proposed detector.

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Fig. 6.  Measured results of the proposed detector. (a) The measured results of linearity. (b) The measured voltage responsivity.

DownLoad: Full-Size Img PowerPoint

Table 1.   The phase of each harmonic generated by PD units.

Table 2.   Comparisons with other reported OOK detectors.
[1]
Woo B C, Jin L J, Chan E K, et al. A 60 GHz 5 Gb/s gain-boosting OOK demodulator in 0.13μm CMOS. IEEE Microwave Wireless Compon Lett, 2011, 21(2):101 doi: 10.1109/LMWC.2010.2096411
[2]
Uzunkol M, Shin W, Rebeiz G M. Design and analysis of a low-power 3-6-Gb/s 55-GHz OOK receiver with high-temperature performance. IEEE Trans Microwave Theory Tech, 2012, 60(10):3263 doi: 10.1109/TMTT.2012.2211381
[3]
Bao M Q, Chen J J, Kozhuharov R, et al. A high-speed power detector for D-band communication. IEEE Trans Microwave Theory Tech, 2014, 62(7):1515 doi: 10.1109/TMTT.2014.2321115
[4]
Oncu A, Fujishima M. 19.2 mW 2 Gbps CMOS pulse receiver for 60 GHz band wireless communication. IEEE Symposium on VLSI Circuits, 2008:158 https://www.researchgate.net/publication/260627119_98_mW_10_Gbps_Wireless_Transceiver_Chipset_With_D-Band_CMOS_Circuits
[5]
Lin F, Brinkhoff J, Kai K, et al. A low power 60 GHz OOK transceiver system in 90 nm CMOS with innovative on-chip AMC antenna. IEEE Asian Solid-State Circuits Conference, 2009:349 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5357167&filter%3DAND%28p_IS_Number%3A5357143%29
[6]
Zirath H, He Z X. Power detectors and envelope detectors in mHEMT MMIC-technology for millimeterwave applications Microwave Integrated Circuits Conference (EuMIC), 2010: 353 https://www.researchgate.net/publication/224186473_Power_detectors_and_envelope_detectors_in_mHEMT_MMIC-technology_for_millimeterwave_applications
[7]
Zhang J, Fusco V. A compact Ⅴ-band active SiGe power detector. Microwave Integrated Circuits Conference (EuMIC), 2012 https://www.researchgate.net/publication/261212519_A_compact_V-band_active_SiGe_power_detector
[8]
Hrobak M, Sterns M, Schramm M, et al. Planar zero bias Schottky diode detector operating in the E-and W-band. European Microwave Conference, 2013:179 http://ieeexplore.ieee.org/document/6686620/?reload=true&arnumber=6686620&punumber%3D6679726%26sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6686544%29%26pageNumber%3D4
[9]
Radisic V, Leong K M K H, Zhang C B, et al. Demonstration of a micro-integrated sub-millimeter-wave pixel. IEEE Trans Microw Theory Technol, 2013, 61(8):2949 doi: 10.1109/TMTT.2013.2272379
[10]
Hoefle M, Penirschke A, Cojocari O, et al. Broadband zero-bias Schottky detector for E-field measurements up to 100 GHz and beyond. 38th International Conference on Infrared, Millimeter, and Terahertz Waves, 2013:1 https://www.researchgate.net/publication/261268838_Broadband_zero-bias_Schottky_detector_for_E-field_measurements_up_to_100_GHz_and_beyond
[11]
Dai Y B, Han K F, Yan N, et al. A high dynamic range linear RF power detector with a preceding LNA. J Semicond, 2012, 33(1):015005 doi: 10.1088/1674-4926/33/1/015005
[12]
Yao C F, Zhou M, Luo Y S, et al. Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes. J Semicond, 2015, 36(6):065002 doi: 10.1088/1674-4926/36/6/065002
[13]
Zhang J, Ye Y. W band high conversion gain, single balanced subharmonically gate pumped mixer with novel size-reduced marchand balun. IEEE International Microwave Symposium MTT-S, 2015 http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=7166980
[14]
Ye Y, Zhang J, Sun X W. W-band travelingwave frequency doubler with output power of 9 dBm and power efficiency of 11.2%. IEEE Microwave Wireless Compon Lett, 2014, 24:704 doi: 10.1109/LMWC.2014.2340792
[15]
Mass S A. Nonlinear microwave and RF circuits. Boston:Artech House, 2003

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    Received: 19 December 2016 Revised: 09 March 2017 Online: Published: 01 August 2017

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      Article Navigation >  Journal of Semiconductors  > 2017  >  38(8): 085002
      Linpu Huang, Qiang Hu, Jian Zhang. A high-speed power detector MMIC for E-band communication[J]. Journal of Semiconductors, 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002 ****L P Huang, Q Hu, J Zhang. A high-speed power detector MMIC for E-band communication[J]. J. Semicond., 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002.
      Citation:
      Linpu Huang, Qiang Hu, Jian Zhang. A high-speed power detector MMIC for E-band communication[J]. Journal of Semiconductors, 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002 ****
      L P Huang, Q Hu, J Zhang. A high-speed power detector MMIC for E-band communication[J]. J. Semicond., 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002.
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      A high-speed power detector MMIC for E-band communication

      DOI: 10.1088/1674-4926/38/8/085002
      • 1.

        Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • 2.

        University of Chinese Academy of Sciences, Beijing 100049, China

      Funds:

      the National High Technology Research and Development Program of China 2015AA01A704

      Project supported by the National High Technology Research and Development Program of China (No. 2015AA01A704)

      More Information
      • Corresponding author: Jian Zhang, Email:zj@mail.sim.ac.cn
      • Received Date: 2016-12-19
      • Revised Date: 2017-03-09
      • Published Date: 2017-08-01

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